Inventor · disambiguated record
Ho-Woo Park
Also filed as: PARK HO-WOO
3 granted patents·1 pending application·142 citations·filing 2001–2018
72Inventor score
Top patents by PatentIndex Score
4 records- 0192US6541328B2Method of fabricating metal oxide semiconductor transistor with lightly doped impurity regions formed after removing spacers used for defining higher density impurity regionsSAMSUNG ELECTRONICS CO LTD·Filed 2001·Granted Apr 1, 2003·125 cites·25 claims
- 0274US7091567B2Semiconductor device including air gap between semiconductor substrate and L-shaped spacer and method of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2004·Granted Aug 15, 2006·16 cites·10 claims
- 0366US10658413B2Semiconductor device including via plugSAMSUNG ELECTRONICS CO LTD·Filed 2018·Granted May 19, 2020·1 cites·19 claims
- 0446US2006240632A1Semiconductor device including air gap between semiconductor substrate and L-shaped spacer and method of fabricating the samePARK HO-WOO·Filed 2006·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →