Inventor · disambiguated record
Hidenori Mikami
Also filed as: MIKAMI HIDENORI
9 granted patents·4 pending applications·29 citations·filing 2009–2020
85Inventor score
Files withSUMITOMO ELECTRIC INDUSTRIES7ISHIBASHI KEIJI3MATSUMOTO NAOKI1MIKAMI HIDENORI1YAMAGUCHI SAYURI1
Top patents by PatentIndex Score
13 records- 0189US8183669B2Nitride semiconductor wafer having a chamfered edgeISHIBASHI KEIJI·Filed 2011·Granted May 22, 2012·8 cites·5 claims
- 0284US9136337B2Group III nitride composite substrate and method for manufacturing the same, laminated group III nitride composite substrate, and group III nitride semiconductor device and method for manufacturing the sameSUMITOMO ELECTRIC INDUSTRIES·Filed 2013·Granted Sep 15, 2015·7 cites·10 claims
- 0382US7872331B2Nitride semiconductor waferSUMITOMO ELECTRIC INDUSTRIES·Filed 2009·Granted Jan 18, 2011·7 cites·9 claims
- 0481US10600676B2Group III nitride composite substrate and method for manufacturing the same, and method for manufacturing group III nitride semiconductor deviceSUMITOMO ELECTRIC INDUSTRIES·Filed 2018·Granted Mar 24, 2020·2 cites·14 claims
- 0574US9917004B2Group III nitride composite substrate and method for manufacturing the same, and method for manufacturing group III nitride semiconductor deviceSUMITOMO ELECTRIC INDUSTRIES·Filed 2013·Granted Mar 13, 2018·2 cites·9 claims
- 0667US11094537B2Group III nitride composite substrate and method for manufacturing the same, and method for manufacturing group III nitride semiconductor deviceSUMITOMO ELECTRIC INDUSTRIES·Filed 2020·Granted Aug 17, 2021·0 cites·15 claims
- 0765US8101523B2Method of processing of nitride semiconductor wafer, nitride semiconductor wafer, method of producing nitride semiconductor device and nitride semiconductor deviceISHIBASHI KEIJI·Filed 2010·Granted Jan 24, 2012·1 cites·5 claims
- 0862US8471365B2Nitride semiconductor substrate, semiconductor device, and methods for manufacturing nitride semiconductor substrate and semiconductor deviceYAMAGUCHI SAYURI·Filed 2010·Granted Jun 25, 2013·2 cites·5 claims
- 0951US2012184108A1Method of processing of nitride semiconductor wafer, nitride semiconductor wafer, method of producing nitride semiconductor device and nitride semiconductor deviceISHIBASHI KEIJI·Filed 2012·Application pending·0 cites
- 1048US2013252401A1Nitride semiconductor substrate, semiconductor device, and methods for manufacturing nitride semiconductor substrate and semiconductor deviceSUMITOMO ELECTRIC INDUSTRIES·Filed 2013·Application pending·0 cites
- 1140US2013032013A1Method of manufacturing group iii nitride crystal substrateSUMITOMO ELECTRIC INDUSTRIES·Filed 2012·Application pending·0 cites
- 1240US2013061841A1Saw wire and method of manufacturing group iii nitride crystal substrate using the sameMATSUMOTO NAOKI·Filed 2012·Application pending·0 cites
- 1339US8471366B2Nitride semiconductor substrateMIKAMI HIDENORI·Filed 2011·Granted Jun 25, 2013·0 cites·4 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →