Inventor · disambiguated record
Chi Hyun In
Also filed as: IN CHI HYUN
21 granted patents·6 pending applications·34 citations·filing 2007–2024
93Inventor score
Top patents by PatentIndex Score
27 records- 0189US9634193B2Light emitting diode and method of manufacturing the sameSEOUL VIOSYS CO LTD·Filed 2015·Granted Apr 25, 2017·5 cites·20 claims
- 0288US10756237B2Light emitting diode and light emitting diode packageSEOUL VIOSYS CO LTD·Filed 2019·Granted Aug 25, 2020·3 cites·18 claims
- 0387US10727376B2Light emitting diode package and method of manufacturing the sameSEOUL VIOSYS CO LTD·Filed 2018·Granted Jul 28, 2020·3 cites·19 claims
- 0487US2025006869A1Light emitting diode package and method of manufacturing the sameSEOUL VIOSYS CO LTD·Filed 2024·Application pending·0 cites
- 0585US10319884B2Light emitting diodeSEOUL VIOSYS CO LTD·Filed 2016·Granted Jun 11, 2019·3 cites·19 claims
- 0681US12107195B2Light emitting diode package and method of manufacturing the sameSEOUL VIOSYS CO LTD·Filed 2023·Granted Oct 1, 2024·0 cites·8 claims
- 0781US10439105B2Light emitting diode and light emitting diode packageSEOUL VIOSYS CO LTD·Filed 2016·Granted Oct 8, 2019·2 cites·19 claims
- 0880US10304998B2Light emitting diode chip and light emitting device having the sameSEOUL VIOSYS CO LTD·Filed 2014·Granted May 28, 2019·6 cites·15 claims
- 0980US10297720B2Light emitting diode and method of manufacturing the sameSEOUL VIOSYS CO LTD·Filed 2015·Granted May 21, 2019·2 cites·19 claims
- 1079US10763392B2Light emitting deviceSEOUL VIOSYS CO LTD·Filed 2020·Granted Sep 1, 2020·1 cites·21 claims
- 1179US9059012B2Epitaxial layer wafer having void for separating growth substrate therefrom and semiconductor device fabricated using the sameSEOUL VIOSYS CO LTD·Filed 2013·Granted Jun 16, 2015·3 cites·28 claims
- 1275US2025048785A1Light emitting deviceSEOUL VIOSYS CO LTD·Filed 2024·Application pending·0 cites
- 1374US10074778B2Light emitting diode package and method for manufacturing the sameIN CHI HYUN·Filed 2012·Granted Sep 11, 2018·3 cites·14 claims
- 1473US9812616B2Light-emitting diodeSEOUL VIOSYS CO LTD·Filed 2015·Granted Nov 7, 2017·2 cites·19 claims
- 1571US11563152B2Light emitting diode package and method of manufacturing the sameSEOUL VIOSYS CO LTD·Filed 2020·Granted Jan 24, 2023·0 cites·19 claims
- 1671US9164489B2Watch with counterfeit detection functionSEOUL VIOSYS CO LTD·Filed 2014·Granted Oct 20, 2015·1 cites·17 claims
- 1767US12183848B2Light emitting deviceSEOUL VIOSYS CO LTD·Filed 2022·Granted Dec 31, 2024·0 cites·21 claims
- 1866US11489087B2Light emitting deviceSEOUL VIOSYS CO LTD·Filed 2020·Granted Nov 1, 2022·0 cites·18 claims
- 1955US2014361327A1Light emitting diode and method of manufacturing the sameCHAE JONG HYEON·Filed 2012·Application pending·0 cites
- 2053US10573780B2Ultraviolet light-emitting deviceSEOUL VIOSYS CO LTD·Filed 2017·Granted Feb 25, 2020·0 cites·21 claims
- 2152US9356191B2Epitaxial layer wafer having void for separating growth substrate therefrom and semiconductor device fabricated using the sameSEOUL VIOSYS CO LTD·Filed 2015·Granted May 31, 2016·0 cites·11 claims
- 2250US10177281B2Light-emitting diodeSEOUL VIOSYS CO LTD·Filed 2017·Granted Jan 8, 2019·0 cites·20 claims
- 2348US9048348B2Method of separating substrate and method of fabricating semiconductor device using the sameSEOUL VIOSYS CO LTD·Filed 2013·Granted Jun 2, 2015·0 cites·23 claims
- 2444US9218967B2Method for separating epitaxial layer from growth substrateSEOUL VIOSYS CO LTD·Filed 2012·Granted Dec 22, 2015·0 cites·17 claims
- 2543US2008006919A1Flip chip package and method of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2007·Application pending·0 cites
- 2639US2013334560A1Light emitting diode chipLEE KYU HO·Filed 2012·Application pending·0 cites
- 2739US2018261723A1Ultraviolet light emitting device and method for manufacturing sameSEOUL VIOSYS CO LTD·Filed 2018·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →