Inventor · disambiguated record
Wim Deweerd
Also filed as: DEWEERD WIM · DEWEERD WIM Y · DEWEERD WIM YVES
41 granted patents·5 pending applications·174 citations·filing 2008–2013
97Inventor score
Top patents by PatentIndex Score
46 records- 0195US8581318B1Enhanced non-noble electrode layers for DRAM capacitor cellINTERMOLECULAR INC·Filed 2013·Granted Nov 12, 2013·21 cites·20 claims
- 0292US8435854B1Top electrode templating for DRAM capacitorMALHOTRA SANDRA·Filed 2011·Granted May 7, 2013·11 cites·21 claims
- 0389US8936889B2Method and apparatus for EUV mask having diffusion barrierINTERMOLECULAR INC·Filed 2013·Granted Jan 20, 2015·4 cites·11 claims
- 0488US8647960B2Anneal to minimize leakage current in DRAM capacitorDEWEERD WIM·Filed 2011·Granted Feb 11, 2014·11 cites·16 claims
- 0587US8530348B1Integration of non-noble DRAM electrodeMALHOTRA SANDRA G·Filed 2012·Granted Sep 10, 2013·9 cites·16 claims
- 0686US8765570B2Manufacturable high-k DRAM MIM capacitor structureMALHOTRA SANDRA·Filed 2012·Granted Jul 1, 2014·7 cites·20 claims
- 0786US8654560B2Variable resistance memory with a select deviceDEWEERD WIM·Filed 2011·Granted Feb 18, 2014·8 cites·13 claims
- 0885US8679939B2Manufacturable high-k DRAM MIM capacitor structureINTERMOLECULAR INC·Filed 2013·Granted Mar 25, 2014·6 cites·20 claims
- 0985US8546236B2High performance dielectric stack for DRAM capacitorINTERMOLECULAR INC·Filed 2013·Granted Oct 1, 2013·5 cites·19 claims
- 1085US8440537B1Adsorption site blocking method for co-doping ALD filmsMALHOTRA SANDRA·Filed 2011·Granted May 14, 2013·6 cites·20 claims
- 1184US8741712B2Leakage reduction in DRAM MIM capacitorsCHIANG TONY P·Filed 2012·Granted Jun 3, 2014·6 cites·20 claims
- 1283US8415227B2High performance dielectric stack for DRAM capacitorMALHOTRA SANDRA·Filed 2011·Granted Apr 9, 2013·5 cites·10 claims
- 1382US8541868B2Top electrode templating for DRAM capacitorINTERMOLECULAR INC·Filed 2012·Granted Sep 24, 2013·4 cites·21 claims
- 1482US7939815B2Forming a carbon passivated ovonic threshold switchST MICROELECTRONICS SRL·Filed 2008·Granted May 10, 2011·21 cites·36 claims
- 1581US8940463B2Method and apparatus for EUV mask having diffusion barrierINTERMOLECULAR INC·Filed 2013·Granted Jan 27, 2015·2 cites·20 claims
- 1681US8722504B2Interfacial layer for DRAM capacitorDEWEERD WIM·Filed 2011·Granted May 13, 2014·6 cites·20 claims
- 1781US8652927B2Integration of non-noble DRAM electrodeINTERMOLECULAR INC·Filed 2013·Granted Feb 18, 2014·5 cites·17 claims
- 1879US8476141B2High performance dielectric stack for DRAM capacitorINTERMOLECULAR INC·Filed 2013·Granted Jul 2, 2013·3 cites·9 claims
- 1978US8815677B2Method of processing MIM capacitors to reduce leakage currentCHEN HANHONG·Filed 2011·Granted Aug 26, 2014·5 cites·14 claims
- 2078US8647943B2Enhanced non-noble electrode layers for DRAM capacitor cellCHEN HANHONG·Filed 2012·Granted Feb 11, 2014·4 cites·19 claims
- 2178US8541283B2High performance dielectric stack for DRAM capacitorINTERMOLECULAR INC·Filed 2013·Granted Sep 24, 2013·3 cites·20 claims
- 2278US8475977B2Protective cap for extreme ultraviolet lithography masksDEWEERD WIM YVES·Filed 2010·Granted Jul 2, 2013·3 cites·18 claims
- 2372US8813325B2Method for fabricating a DRAM capacitorRAMANI KARTHIK·Filed 2011·Granted Aug 26, 2014·3 cites·8 claims
- 2472US8772123B2Band gap improvement in DRAM capacitorsCHEN HANHONG·Filed 2011·Granted Jul 8, 2014·2 cites·19 claims
- 2572US8574999B2Blocking layers for leakage current reduction in DRAM devicesINTERMOLECULAR INC·Filed 2013·Granted Nov 5, 2013·2 cites·20 claims
- 2669US8836002B2Method for fabricating a DRAM capacitorINTERMOLECULAR INC·Filed 2013·Granted Sep 16, 2014·2 cites·9 claims
- 2768US8563392B2Method of forming an ALD materialMALHOTRA SANDRA·Filed 2011·Granted Oct 22, 2013·2 cites·15 claims
- 2867US9224878B2High work function, manufacturable top electrodeINTERMOLECULAR INC·Filed 2012·Granted Dec 29, 2015·2 cites·16 claims
- 2966US9178010B2Adsorption site blocking method for co-doping ALD filmsINTERMOLECULAR INC·Filed 2012·Granted Nov 3, 2015·1 cites·16 claims
- 3066US8853049B2Single-sided non-noble metal electrode hybrid MIM stack for DRAM devicesDEWEERD WIM·Filed 2011·Granted Oct 7, 2014·2 cites·20 claims
- 3165US8569818B2Blocking layers for leakage current reduction in DRAM devicesINTERMOLECULAR INC·Filed 2012·Granted Oct 29, 2013·1 cites·20 claims
- 3261US8574983B2Method for fabricating a DRAM capacitor having increased thermal and chemical stabilityRAMANI KARTHIK·Filed 2011·Granted Nov 5, 2013·1 cites·12 claims
- 3360US8847397B2High work function, manufacturable top electrodeINTERMOLECULAR INC·Filed 2013·Granted Sep 30, 2014·1 cites·20 claims
- 3454US8878269B2Band gap improvement in DRAM capacitorsINTERMOLECULAR INC·Filed 2013·Granted Nov 4, 2014·0 cites·19 claims
- 3554US8542523B2Method for fabricating a DRAM capacitor having increased thermal and chemical stabilityINTERMOLECULAR INC·Filed 2013·Granted Sep 24, 2013·0 cites·14 claims
- 3652US8975633B2Molybdenum oxide top electrode for DRAM capacitorsINTERMOLECULAR INC·Filed 2012·Granted Mar 10, 2015·0 cites·12 claims
- 3751US8541282B2Blocking layers for leakage current reduction in DRAM devicesMALHOTRA SANDRA·Filed 2011·Granted Sep 24, 2013·0 cites·20 claims
- 3851US8426085B2Method and apparatus for EUV mask having diffusion barrierDEWEERD WIM YVES·Filed 2010·Granted Apr 23, 2013·0 cites·9 claims
- 3949US8765569B2Molybdenum oxide top electrode for DRAM capacitorsCHEN HANHONG·Filed 2011·Granted Jul 1, 2014·0 cites·19 claims
- 4048US2014077336A1Leakage reduction in DRAM MIM capacitorsINTERMOLECULAR INC·Filed 2013·Application pending·0 cites
- 4146US2009196091A1Self-aligned phase change memoryKAU DERCHANG·Filed 2008·Application pending·0 cites
- 4242US8906812B2Wet etch and clean chemistries for MoOxDEWEERD WIM·Filed 2011·Granted Dec 9, 2014·0 cites·18 claims
- 4342US8211812B2Method for fabricating a high-K dielectric layerRAGNARSSON LARS-AKE·Filed 2008·Granted Jul 3, 2012·0 cites·15 claims
- 4437US2013071986A1Partial etch of dram electrodeDEWEERD WIM·Filed 2011·Application pending·0 cites
- 4537US2013052790A1Doping approach of titanium dioxide for dram capacitorsDEWEERD WIM·Filed 2011·Application pending·0 cites
- 4636US2009180313A1Chalcogenide anti-fuseDEWEERD WIM·Filed 2008·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →