Inventor · disambiguated record
Jeehwan Kim
Also filed as: KIM JEEHWAN
193 granted patents·56 pending applications·471 citations·filing 2006–2023
99Inventor score
Files withIBM166MASSACHUSETTS INST TECHNOLOGY24FOGEL KEITH E10ABOU-KANDIL AHMED6GLOBALFOUNDRIES INC6
Top patents by PatentIndex Score
249 records- 0198US9484347B1FinFET CMOS with Si NFET and SiGe PFETIBM·Filed 2015·Granted Nov 1, 2016·22 cites·14 claims
- 0298US8304272B2Germanium photodetectorASSEFA SOLOMON·Filed 2011·Granted Nov 6, 2012·30 cites·5 claims
- 0397US9096050B2Wafer scale epitaxial graphene transferIBM·Filed 2013·Granted Aug 4, 2015·34 cites·18 claims
- 0497US9035282B2Formation of large scale single crystalline grapheneIBM·Filed 2013·Granted May 19, 2015·26 cites·6 claims
- 0597US8614116B2Germanium photodetectorASSEFA SOLOMON·Filed 2012·Granted Dec 24, 2013·21 cites·7 claims
- 0696US9401397B1Reduction of defect induced leakage in III-V semiconductor devicesIBM·Filed 2015·Granted Jul 26, 2016·11 cites·20 claims
- 0796US8916451B2Thin film wafer transfer and structure for electronic devicesIBM·Filed 2013·Granted Dec 23, 2014·29 cites·20 claims
- 0895US9917021B2Porous silicon relaxation medium for dislocation free CMOS devicesIBM·Filed 2016·Granted Mar 13, 2018·8 cites·8 claims
- 0995US9306107B2Buffer layer for high performing and low light degraded solar cellsIBM·Filed 2013·Granted Apr 5, 2016·10 cites·9 claims
- 1095US9123838B2Transparent conductive electrode for three dimensional photovoltaic deviceFOGEL KEITH E·Filed 2012·Granted Sep 1, 2015·11 cites·8 claims
- 1194US9559120B2Porous silicon relaxation medium for dislocation free CMOS devicesIBM·Filed 2015·Granted Jan 31, 2017·7 cites·8 claims
- 1294US9536945B1MOSFET with ultra low drain leakageIBM·Filed 2015·Granted Jan 3, 2017·7 cites·14 claims
- 1394US9153729B2Atomic layer deposition for photovoltaic devicesIBM·Filed 2012·Granted Oct 6, 2015·7 cites·14 claims
- 1494US8846440B2Germanium photodetectorIBM·Filed 2013·Granted Sep 30, 2014·7 cites·14 claims
- 1593US10396182B2Silicon germanium-on-insulator formation by thermal mixingIBM·Filed 2016·Granted Aug 27, 2019·6 cites·11 claims
- 1693US9666674B2Formation of large scale single crystalline grapheneGLOBALFOUNDRIES INC·Filed 2015·Granted May 30, 2017·7 cites·20 claims
- 1793US9040428B2Formation of metal nanospheres and microspheresHONG AUGUSTIN J·Filed 2012·Granted May 26, 2015·16 cites·6 claims
- 1892US10164014B2MOSFET with ultra low drain leakageIBM·Filed 2016·Granted Dec 25, 2018·5 cites·20 claims
- 1992US9203022B2Resistive random access memory devices with extremely reactive contactsIBM·Filed 2013·Granted Dec 1, 2015·8 cites·11 claims
- 2092US8536043B2Reduced S/D contact resistance of III-V MOSFET using low temperature metal-induced crystallization of n+ GeKIM JEEHWAN·Filed 2011·Granted Sep 17, 2013·14 cites·21 claims
- 2191US9530643B2Selective epitaxy using epitaxy-prevention layersIBM·Filed 2015·Granted Dec 27, 2016·5 cites·20 claims
- 2291US8889466B2Protective insulating layer and chemical mechanical polishing for polycrystalline thin film solar cellsIBM·Filed 2013·Granted Nov 18, 2014·7 cites·13 claims
- 2390US10770289B2Systems and methods for graphene based layer transferMASSACHUSETTS INST TECHNOLOGY·Filed 2018·Granted Sep 8, 2020·5 cites·23 claims
- 2490US9768254B2Leakage-free implantation-free ETSOI transistorsIBM·Filed 2015·Granted Sep 19, 2017·4 cites·12 claims
- 2590US9443997B2Hybrid CZTSSe photovoltaic deviceIBM·Filed 2013·Granted Sep 13, 2016·6 cites·10 claims
- 2690US9105854B2Transferable transparent conductive oxideIBM·Filed 2013·Granted Aug 11, 2015·7 cites·15 claims
- 2790US8735210B2High efficiency solar cells fabricated by inexpensive PECVDFOGEL KEITH E·Filed 2012·Granted May 27, 2014·5 cites·23 claims
- 2889US10903073B2Systems and methods of dislocation filtering for layer transferMASSACHUSETTS INST TECHNOLOGY·Filed 2017·Granted Jan 26, 2021·5 cites·13 claims
- 2989US10615161B2III-V fins by aspect ratio trapping and self-aligned etch to remove rough epitaxy surfaceIBM·Filed 2016·Granted Apr 7, 2020·4 cites·16 claims
- 3089US10056510B2Cone-shaped holes for high efficiency thin film solar cellsIBM·Filed 2015·Granted Aug 21, 2018·3 cites·15 claims
- 3189US9318641B2Nanowires formed by employing solder nanodotsIBM·Filed 2015·Granted Apr 19, 2016·2 cites·9 claims
- 3288US10517155B2Methods and apparatus for vertically stacked multicolor light-emitting diode (LED) displayMASSACHUSETTS INST TECHNOLOGY·Filed 2018·Granted Dec 24, 2019·6 cites·18 claims
- 3388US9583562B2Reduction of defect induced leakage in III-V semiconductor devicesIBM·Filed 2015·Granted Feb 28, 2017·4 cites·7 claims
- 3488US8685858B2Formation of metal nanospheres and microspheresHONG AUGUSTIN J·Filed 2011·Granted Apr 1, 2014·4 cites·7 claims
- 3587US9991113B2Systems and methods for fabricating single-crystalline diamond membranesKIM JEEHWAN·Filed 2017·Granted Jun 5, 2018·6 cites·18 claims
- 3686US9337274B2Formation of large scale single crystalline grapheneGLOBALFOUNDRIES INC·Filed 2013·Granted May 10, 2016·5 cites·17 claims
- 3786US9324813B2Doped zinc oxide as N+ layer for semiconductor devicesIBM·Filed 2014·Granted Apr 26, 2016·5 cites·18 claims
- 3885US10229857B2Porous silicon relaxation medium for dislocation free CMOS devicesIBM·Filed 2017·Granted Mar 12, 2019·2 cites·10 claims
- 3985US9620592B2Doped zinc oxide and n-doping to reduce junction leakageIBM·Filed 2015·Granted Apr 11, 2017·4 cites·20 claims
- 4085US9490455B2LED light extraction enhancement enabled using self-assembled particles patterned surfaceIBM·Filed 2015·Granted Nov 8, 2016·3 cites·9 claims
- 4185US9443957B1Self-aligned source and drain regions for semiconductor devicesIBM·Filed 2015·Granted Sep 13, 2016·3 cites·17 claims
- 4285US9099664B2Transferable transparent conductive oxideIBM·Filed 2013·Granted Aug 4, 2015·4 cites·10 claims
- 4384US11063073B2Apparatus and methods for curved focal plane arrayMASSACHUSETTS INST TECHNOLOGY·Filed 2018·Granted Jul 13, 2021·3 cites·24 claims
- 4484US11031393B2III-V fins by aspect ratio trapping and self-aligned etch to remove rough epitaxy surfaceIBM·Filed 2020·Granted Jun 8, 2021·1 cites·20 claims
- 4584US9929060B2Porous silicon relaxation medium for dislocation free CMOS devicesIBM·Filed 2016·Granted Mar 27, 2018·2 cites·8 claims
- 4684US9231133B2Nanowires formed by employing solder nanodotsFOGEL KEITH E·Filed 2010·Granted Jan 5, 2016·2 cites·15 claims
- 4784US8617938B2Device and method for boron diffusion in semiconductorsDE SOUZA JOEL P·Filed 2011·Granted Dec 31, 2013·6 cites·25 claims
- 4883US9786756B2Self-aligned source and drain regions for semiconductor devicesIBM·Filed 2016·Granted Oct 10, 2017·2 cites·5 claims
- 4982US10403779B2Cost-efficient high power PECVD deposition apparatus for solar cellsIBM·Filed 2015·Granted Sep 3, 2019·2 cites·7 claims
- 5082US10177269B2Controllable indium doping for high efficiency CZTS thin-film solar cellsIBM·Filed 2015·Granted Jan 8, 2019·2 cites·12 claims
Showing the top 50 of 249 patent records by PatentIndex Score.
Join the waitlist — get patent alerts
Get an alert when Jeehwan Kim files or is granted a new patent.
We store only your email — no account needed. See our privacy policy.
Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →