Inventor · disambiguated record
Wenzhi Gao
Also filed as: GAO WENZHI
6 granted patents·5 pending applications·124 citations·filing 2006–2024
77Inventor score
Top patents by PatentIndex Score
11 records- 0197US7867835B2Integrated circuit system for suppressing short channel effectsCHARTERED SEMICONDUCTOR MFG·Filed 2008·Granted Jan 11, 2011·116 cites·20 claims
- 0280US7531401B2Method for improved fabrication of a semiconductor using a stress proximity technique processIBM·Filed 2007·Granted May 12, 2009·7 cites·18 claims
- 0369US10967514B2Apparatus and method to monitor robot mechanical conditionABB SCHWEIZ AG·Filed 2018·Granted Apr 6, 2021·1 cites·20 claims
- 0459US2024307229A1Corneal lenticular incision using a femtosecond laser with improved scanline sweep speed profileAMO DEV LLC·Filed 2024·Application pending·0 cites
- 0555US2024197532A1Lasik corneal flap cutting patterns for bubble managementAMO DEV LLC·Filed 2023·Application pending·0 cites
- 0652US12121476B2Corneal lenticular incision using a femtosecond laser with smooth scanning trajectory connecting multiple sweepsAMO DEV LLC·Filed 2022·Granted Oct 22, 2024·0 cites·14 claims
- 0748US7795680B2Integrated circuit system employing selective epitaxial growth technologyCHARTERED SEMICONDUCTOR MFG·Filed 2007·Granted Sep 14, 2010·0 cites·20 claims
- 0847US2010009527A1Integrated circuit system employing single mask layer technique for well formationCHARTERED SEMICONDUCTOR MFG·Filed 2008·Application pending·0 cites
- 0947US2013256766A1Spacer and process to enhance the strain in the channel with stress linerIBM·Filed 2013·Application pending·0 cites
- 1041US8461009B2Spacer and process to enhance the strain in the channel with stress linerAJMERA ATUL C·Filed 2006·Granted Jun 11, 2013·0 cites·16 claims
- 1139US2007254420A1Source/drain implantation and channel strain transfer using different sized spacers and related semiconductor deviceIBM·Filed 2006·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →