Inventor · disambiguated record
John Mark Anthony
Also filed as: ANTHONY JOHN · ANTHONY JOHN M · ANTHONY JOHN MARK
13 granted patents·2 pending applications·297 citations·filing 1995–2017
92Inventor score
Top patents by PatentIndex Score
15 records- 0190US5689151AAnode plate for flat panel display having integrated getterTEXAS INSTRUMENTS INC·Filed 1995·Granted Nov 18, 1997·66 cites·14 claims
- 0288US6462931B1High-dielectric constant capacitor and memoryTEXAS INSTRUMENTS INC·Filed 1997·Granted Oct 8, 2002·74 cites·1 claims
- 0385US6777674B2Method for manipulating microscopic particles and analyzingOMNIPROBE INC·Filed 2002·Granted Aug 17, 2004·25 cites·65 claims
- 0479US6841439B1High permittivity silicate gate dielectricTEXAS INSTRUMENTS INC·Filed 1998·Granted Jan 11, 2005·52 cites·5 claims
- 0576US6248621B1Method of growing high-quality crystalline silicon quantum wells for RTD structuresTEXAS INSTRUMENTS INC·Filed 1999·Granted Jun 19, 2001·40 cites·12 claims
- 0671US7115461B2High permittivity silicate gate dielectricTEXAS INSTRUMENTS INC·Filed 2004·Granted Oct 3, 2006·13 cites·20 claims
- 0754US6613698B2Lower temperature method for forming high quality silicon-nitrogen dielectricsTEXAS INSTRUMENTS INC·Filed 2001·Granted Sep 2, 2003·3 cites·21 claims
- 0843US6730977B2Lower temperature method for forming high quality silicon-nitrogen dielectricsTEXAS INSTRUMENTS INC·Filed 2003·Granted May 4, 2004·0 cites·1 claims
- 0942US6040230AMethod of forming a nano-rugged silicon-containing layerTEXAS INSTRUMENTS INC·Filed 1998·Granted Mar 21, 2000·7 cites·8 claims
- 1041US9689068B2Deposition and patterning using emitted electronsNANOEDIT LLC·Filed 2015·Granted Jun 27, 2017·0 cites·18 claims
- 1141US2018099917A1Reversibly reducible materials and use thereofUNIV KENTUCKY RES FOUND·Filed 2017·Application pending·0 cites
- 1240US6274510B1Lower temperature method for forming high quality silicon-nitrogen dielectricsTEXAS INSTRUMENTS INC·Filed 1998·Granted Aug 14, 2001·6 cites·8 claims
- 1339US6069368AMethod for growing high-quality crystalline Si quantum wells for RTD structuresTEXAS INSTRUMENTS INC·Filed 1998·Granted May 30, 2000·6 cites·7 claims
- 1437US6897105B1Method of forming metal oxide gate structures and capacitor electrodesTEXAS INSTRUMENTS INC·Filed 1999·Granted May 24, 2005·5 cites·8 claims
- 1533US2001053593A1Method of forming metal oxide gate structures and capacitor electrodesFiled 2001·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →