Inventor · disambiguated record
Eiryo Takasuka
Also filed as: TAKASUKA EIRYO
11 granted patents·10 pending applications·551 citations·filing 1999–2022
90Inventor score
Files withSUMITOMO ELECTRIC INDUSTRIES14UENO MASAKI2AGENCY SCIENCE TECH & RES1CHUA SOO JIN1INST MATERIALS RESEARCH & ENG1
Top patents by PatentIndex Score
21 records- 0198US8349083B2Vapor-phase process apparatus, vapor-phase process method, and substrateSUMITOMO ELECTRIC INDUSTRIES·Filed 2011·Granted Jan 8, 2013·475 cites·1 claims
- 0294US8349403B2Vapor-phase process apparatus, vapor-phase process method, and substrateSUMITOMO ELECTRIC INDUSTRIES·Filed 2011·Granted Jan 8, 2013·8 cites·3 claims
- 0388US6841274B2GaN single-crystal substrate, nitride type semiconductor epitaxial substrate, nitride type semiconductor device, and methods of making the sameSUMITOMO ELECTRIC INDUSTRIES·Filed 2003·Granted Jan 11, 2005·34 cites·3 claims
- 0487US8628616B2Vapor-phase process apparatus, vapor-phase process method, and substrateTAKASUKA EIRYO·Filed 2008·Granted Jan 14, 2014·9 cites·8 claims
- 0581US8906162B2Metal organic chemical vapor deposition equipmentUENO MASAKI·Filed 2012·Granted Dec 9, 2014·1 cites·6 claims
- 0676US11535953B2Silicon carbide single crystal substrateSUMITOMO ELECTRIC INDUSTRIES·Filed 2017·Granted Dec 27, 2022·1 cites·6 claims
- 0775US8920565B2Metalorganic chemical vapor deposition reactorUENO MASAKI·Filed 2008·Granted Dec 30, 2014·2 cites·9 claims
- 0872US11781246B2Silicon carbide single crystal substrateSUMITOMO ELECTRIC INDUSTRIES·Filed 2022·Granted Oct 10, 2023·0 cites·7 claims
- 0968US8120012B2Group III nitride white light emitting diodeCHUA SOO-JIN·Filed 2006·Granted Feb 21, 2012·3 cites·13 claims
- 1067US2013108788A1Vapor-phase process apparatus, vapor-phase process method, and substrateSUMITOMO ELECTRIC INDUSTRIES·Filed 2012·Application pending·0 cites
- 1156US2008006208A1Metal organic chemical vapor deposition equipmentSUMITOMO ELECTRIC INDUSTRIES·Filed 2007·Application pending·0 cites
- 1252US7387678B2GaN substrate and method of fabricating the same, nitride semiconductor device and method of fabricating the sameSUMITOMO ELECTRIC INDUSTRIES·Filed 2004·Granted Jun 17, 2008·3 cites·34 claims
- 1352US2013255568A1Method for manufacturing silicon carbide single crystalSUMITOMO ELECTRIC INDUSTRIES·Filed 2013·Application pending·0 cites
- 1448US2009197399A1Method of growing group iii-v compound semiconductor, and method of manufacturing light-emitting device and electron deviceSUMITOMO ELECTRIC INDUSTRIES·Filed 2009·Application pending·0 cites
- 1547US2008131979A1Vapor-Phase Growth System and Vapor-Phase Growth MethodSUMITOMO ELECTRIC INDUSTRIES·Filed 2007·Application pending·0 cites
- 1647US2010173483A1GaN SINGLE-CRYSTAL SUBSTRATE, NITRIDE TYPE SEMICONDUCTOR EPITAXIAL SUBSTRATE, NITRIDE TYPE SEMICONDUCTOR DEVICE, AND METHODS OF MAKING THE SAMESUMITOMO ELECTRIC INDUSTRIES·Filed 2010·Application pending·0 cites
- 1746US6142663ATemperature measuring method for semiconductor wafers and processing apparatusSUMITOMO METAL IND·Filed 1999·Granted Nov 7, 2000·15 cites·3 claims
- 1843US2005095861A1GaN single-crystal substrate, nitride type semiconductor epitaxial substrate, nitride type semiconductor device, and methods of making the sameINST MATERIALS RESEARCH & ENG·Filed 2004·Application pending·0 cites
- 1942US2017314161A1Method of manufacturing silicon carbide single crystalSUMITOMO ELECTRIC INDUSTRIES·Filed 2015·Application pending·0 cites
- 2040US2009206320A1Group iii nitride white light emitting diodeAGENCY SCIENCE TECH & RES·Filed 2005·Application pending·0 cites
- 2137US2011198566A1Method for manufacturing light emitting element and light emitting elementSUMITOMO ELECTRIC INDUSTRIES·Filed 2010·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →