Vapor-phase process apparatus, vapor-phase process method, and substrate

Abstract

A vapor-phase process apparatus and a vapor-phase process method capable of satisfactorily maintaining quality of processes even when different types of processes are performed are obtained. A vapor-phase process apparatus includes a process chamber, gas supply ports serving as a plurality of gas introduction portions, and a gas supply portion (a gas supply member, a pipe, a flow rate control device, a pipe, and a buffer chamber). The process chamber allows flow of a reaction gas therein. The plurality of gas supply ports are formed in a wall surface (upper wall) of the process chamber along a direction of flow of the reaction gas. The gas supply portion can supply a gas into the process chamber at a different flow rate from each of one gas supply port and another gas supply port different from that one gas supply port among the plurality of gas supply ports.

1 - 17 . (canceled) 
     
     
         18 . A vapor-phase process method, comprising the steps of:
 setting a process object in a process chamber; and   processing said process object by supplying a reaction gas into said process chamber, wherein   in said processing step, a gas supplied to said process chamber separately from said reaction gas flows along a surface of a wall portion opposed to said process object, and   flow velocity distribution of said gas in a direction of width intersecting a direction of flow of said reaction gas is uniform.   
     
     
         19 . The vapor-phase process method according to  claim 18 , wherein
 said gas is a gas identical to a part of said reaction gas.   
     
     
         20 . The vapor-phase process method according to  claim 18 , wherein
 in said processing step, a process for forming a film containing a group-V element on a surface of said process object is performed as said process, and   said gas is a gas containing a group-V element.   
     
     
         21 . The vapor-phase process method according to  claim 18 , wherein
 in said step of arranging a process object, said process object is held on a susceptor in said process chamber, and   regarding a distance between other wall portion opposed to said wall portion and said wall portion, said distance at an upstream end of said susceptor in the direction of flow of said reaction gas is smaller than said distance at a central portion of said susceptor in the direction of flow of said reaction gas.   
     
     
         22 . (canceled)