Inventor · disambiguated record
Chul Lee
Also filed as: LEE CHUL · LEE CHUL W · LEE CHUL-WOONG
27 granted patents·7 pending applications·261 citations·filing 2000–2019
96Inventor score
Files withSAMSUNG ELECTRONICS CO LTD16SHIN DONG-SUK6LG ELECTRONICS INC3HANWHA SOLUTIONS CORP1KIM BONGSOO1
Top patents by PatentIndex Score
34 records- 0197US7332386B2Methods of fabricating fin field transistorsSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Feb 19, 2008·56 cites·16 claims
- 0294US6445879B1Apparatus and method for braking a washing machineLG ELECTRONICS INC·Filed 2000·Granted Sep 3, 2002·73 cites·10 claims
- 0392US9257520B2Semiconductor devices including a stressor in a recess and methods of forming the sameSHIN DONG-SUK·Filed 2015·Granted Feb 9, 2016·7 cites·9 claims
- 0490US9768300B2Semiconductor devices including a stressor in a recess and methods of forming the sameSAMSUNG ELECTRONICS CO LTD·Filed 2017·Granted Sep 19, 2017·5 cites·20 claims
- 0590US6369538B1Method for braking a washing machineLG ELECTRONICS INC·Filed 2000·Granted Apr 9, 2002·36 cites·15 claims
- 0689US9214530B2Methods of forming semiconductor devices including a stressor in a recessSHIN DONG-SUK·Filed 2013·Granted Dec 15, 2015·6 cites·30 claims
- 0789US9129952B2Semiconductor devices including a stressor in a recess and methods of forming the sameSHIN DONG-SUK·Filed 2013·Granted Sep 8, 2015·8 cites·30 claims
- 0887US7227220B2Semiconductor devices having buried bit lines and methods of manufacturing semiconductor devices having buried bit linesSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Jun 5, 2007·11 cites·17 claims
- 0985US9786785B2Semiconductor device, method for fabricating the same, and memory system including the semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2016·Granted Oct 10, 2017·4 cites·9 claims
- 1084US10418284B2Semiconductor devices and methods of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2018·Granted Sep 17, 2019·4 cites·20 claims
- 1184US9741855B2Semiconductor devices including a stressor in a recess and methods of forming the sameSAMSUNG ELECTRONICS CO LTD·Filed 2016·Granted Aug 22, 2017·2 cites·20 claims
- 1284US9312376B2Semiconductor device, method for fabricating the same, and memory system including the semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2014·Granted Apr 12, 2016·6 cites·18 claims
- 1384US8791526B2Vertical type integrated circuit devices and memory devices including conductive lines supported by Mesa structures and methods of fabricating the sameYOON JAE-MAN·Filed 2010·Granted Jul 29, 2014·9 cites·14 claims
- 1478US11132308B2Semiconductor device and semiconductor systemSAMSUNG ELECTRONICS CO LTD·Filed 2019·Granted Sep 28, 2021·2 cites·20 claims
- 1578US6760942B2Washing pattern determination methodLG ELECTRONICS INC·Filed 2001·Granted Jul 13, 2004·18 cites·4 claims
- 1674US7432160B2Semiconductor devices including transistors having three dimensional channels and methods of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted Oct 7, 2008·4 cites·12 claims
- 1773US9537009B2Semiconductor devices including a stressor in a recess and methods of forming the sameSHIN DONG-SUK·Filed 2015·Granted Jan 3, 2017·1 cites·30 claims
- 1869US7667266B2Semiconductor device including active pattern with channel recess, and method of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2008·Granted Feb 23, 2010·4 cites·18 claims
- 1966US9911659B2Semiconductor devices and methods of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2016·Granted Mar 6, 2018·1 cites·20 claims
- 2065US2008315282A1Semiconductor Devices Including Transistors Having Three Dimensional ChannelsSAMSUNG ELECTRONICS CO LTD·Filed 2008·Application pending·0 cites
- 2164US9590034B2Methods of forming semiconductor devices to include single body interconnection patterns using fine patterning techniques, and semiconductor device so formedSHIN SEOK-HO·Filed 2015·Granted Mar 7, 2017·2 cites·20 claims
- 2258US8502341B2Trench-type capacitor, semiconductor device having the same, and semiconductor module having the semiconductor deviceLEE CHUL·Filed 2011·Granted Aug 6, 2013·1 cites·20 claims
- 2357US9520497B2Semiconductor devices including a stressor in a recess and methods of forming the sameSHIN DONG-SUK·Filed 2015·Granted Dec 13, 2016·0 cites·30 claims
- 2457US9397216B2Semiconductor devices including a stressor in a recess and methods of forming the sameSHIN DONG-SUK·Filed 2015·Granted Jul 19, 2016·0 cites·20 claims
- 2556US7879703B2Method of fabricating semiconductor device for reducing thermal burden on impurity regions of peripheral circuit regionSAMSUNG ELECTRONICS CO LTD·Filed 2009·Granted Feb 1, 2011·1 cites·16 claims
- 2655US9548301B2Semiconductor devices including a stressor in a recess and methods of forming the sameSAMSUNG ELECTRONICS CO LTD·Filed 2016·Granted Jan 17, 2017·0 cites·22 claims
- 2749US2007190725A1Methods of Manufacturing Semiconductor devices Having Buried Bit LinesKIM TAE-YONG·Filed 2007·Application pending·0 cites
- 2847US11795249B2Vinyl chloride-based copolymer and preparation method thereofHANWHA SOLUTIONS CORP·Filed 2019·Granted Oct 24, 2023·0 cites·19 claims
- 2946US7169879B2Bisphenyl-2,3,5,6-tetrafluoro-4-trifluoromethylphenyl phosphine oxide derivative and synthesis thereofKWANGJU INST SCI & TECH·Filed 2004·Granted Jan 30, 2007·0 cites·3 claims
- 3042US2007134884A1Isolation method of defining active fins, method of fabricating semiconductor device using the same and semiconductor device fabricated therebySAMSUNG ELECTRONICS CO LTD·Filed 2006·Application pending·0 cites
- 3141US2014370699A1Method for fabricating semiconductor deviceKIM JU-YOUN·Filed 2013·Application pending·0 cites
- 3239US2012273791A1Method of forming semiconductor devices with buried gate electrodes and devices formed by the sameKIM BONGSOO·Filed 2012·Application pending·0 cites
- 3338US2011171800A1Method of forming semiconductor devices with buried gate electrodes and devices formed by the sameSAMSUNG ELECTRONICS CO LTD·Filed 2010·Application pending·0 cites
- 3438US2006133440A1Optical semiconductor deviceKIM KI S·Filed 2005·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →