Inventor · disambiguated record
Sung-Shan Tai
Also filed as: TAI SUNG-SHAN
44 granted patents·7 pending applications·401 citations·filing 1999–2017
98Inventor score
Top patents by PatentIndex Score
51 records- 0196US8394702B2Method for making dual gate oxide trench MOSFET with channel stop using three or four masks processTAI SUNG-SHAN·Filed 2010·Granted Mar 12, 2013·22 cites·15 claims
- 0296US7256446B2One time programmable memory cellALPHA & OMEGA SEMICONDUCTOR·Filed 2005·Granted Aug 14, 2007·38 cites·15 claims
- 0395US9214545B2Dual gate oxide trench MOSFET with channel stop trenchALPHA & OMEGA SEMICONDUCTOR·Filed 2014·Granted Dec 15, 2015·15 cites·14 claims
- 0495US8907416B2Dual gate oxide trench MOSFET with channel stop trenchTAI SUNG-SHAN·Filed 2013·Granted Dec 9, 2014·17 cites·20 claims
- 0593US8748268B1Method of making MOSFET integrated with schottky diode with simplified one-time top-contact trench etchingPAN JI·Filed 2012·Granted Jun 10, 2014·13 cites·8 claims
- 0692US8334566B2Semiconductor power device having shielding electrode for improving breakdown voltageTAI SUNG-SHAN·Filed 2010·Granted Dec 18, 2012·16 cites·8 claims
- 0792US8252647B2Fabrication of trench DMOS device having thick bottom shielding oxideLEE YEEHENG·Filed 2009·Granted Aug 28, 2012·21 cites·14 claims
- 0891US6509233B2Method of making trench-gated MOSFET having cesium gate oxide layerSILICONIX INC·Filed 2002·Granted Jan 21, 2003·57 cites·6 claims
- 0990US9006053B2Method of making MOSFET integrated with schottky diode with simplified one-time top-contact trench etchingALPHA & OMEGA SEMICONDUCTOR·Filed 2014·Granted Apr 14, 2015·8 cites·8 claims
- 1090US8187939B2Direct contact in trench with three-mask shield gate processTAI SUNG-SHAN·Filed 2009·Granted May 29, 2012·15 cites·33 claims
- 1188US9337329B2Method of fabrication and device configuration of asymmetrical DMOSFET with schottky barrier sourceHU YONGZHONG·Filed 2011·Granted May 10, 2016·9 cites·15 claims
- 1287US9024378B2Device structure and manufacturing method using HDP deposited source-body implant blockBHALLA ANUP·Filed 2013·Granted May 5, 2015·7 cites·18 claims
- 1387US8372708B2Device structure and manufacturing method using HDP deposited using deposited source-body implant blockBHALLA ANUP·Filed 2011·Granted Feb 12, 2013·8 cites·17 claims
- 1487US7875541B2Shallow source MOSFETALPHA & OMEGA SEMICONDUCTOR·Filed 2009·Granted Jan 25, 2011·10 cites·10 claims
- 1584US9000514B2Fabrication of trench DMOS device having thick bottom shielding oxideLEE YEEHENG·Filed 2012·Granted Apr 7, 2015·6 cites·9 claims
- 1683US8053315B2Method to manufacture split gate with high density plasma oxide layer as inter-polysilicon insulation layerALPHA & OMEGA SEMICONDUCTOR·Filed 2009·Granted Nov 8, 2011·10 cites·10 claims
- 1783US7855422B2Formation of high sheet resistance resistors and high capacitance capacitors by a single polysilicon processALPHA & OMEGA SEMICONDUCTOR·Filed 2006·Granted Dec 21, 2010·9 cites·12 claims
- 1882US8048775B2Process of forming ultra thin wafers having an edge support ringALPHA & OMEGA SEMICONDUCTOR·Filed 2007·Granted Nov 1, 2011·6 cites·6 claims
- 1981US6277695B1Method of forming vertical planar DMOSFET with self-aligned contactSILICONIX INC·Filed 1999·Granted Aug 21, 2001·52 cites·15 claims
- 2080US8035159B2Device structure and manufacturing method using HDP deposited source-body implant blockALPHA & OMEGA SEMICONDUCTOR·Filed 2007·Granted Oct 11, 2011·7 cites·13 claims
- 2178US7824977B2Completely decoupled high voltage and low voltage transistor manufacturing processesALPHA & OMEGA SEMICONDUCTOR·Filed 2007·Granted Nov 2, 2010·7 cites·3 claims
- 2277US8058687B2Split gate with different gate materials and work functions to reduce gate resistance of ultra high density MOSFETTAI SUNG-SHAN·Filed 2007·Granted Nov 15, 2011·6 cites·14 claims
- 2377US7932148B2Processes for manufacturing MOSFET devices with excessive round-hole shielded gate trench (SGT)ALPHA & OMEGA SEMICONDUCTOR·Filed 2009·Granted Apr 26, 2011·6 cites·10 claims
- 2476US7492005B2Excessive round-hole shielded gate trench (SGT) MOSFET devices and manufacturing processesALPHA & OMEGA SEMICONDUCTOR·Filed 2005·Granted Feb 17, 2009·6 cites·7 claims
- 2572US8507362B2Process of forming ultra thin wafers having an edge support ringFENG TAO·Filed 2011·Granted Aug 13, 2013·2 cites·2 claims
- 2672US7928507B2Polysilicon control etch-back indicatorALPHA & OMEGA SEMICONDUCTOR·Filed 2009·Granted Apr 19, 2011·2 cites·8 claims
- 2772US7829941B2Configuration and method to form MOSFET devices with low resistance silicide gate and mesa contact regionsALPHA & OMEGA SEMICONDUCTOR·Filed 2006·Granted Nov 9, 2010·3 cites·14 claims
- 2872US7667264B2Shallow source MOSFETALPHA & OMEGA SEMICONDUCTOR·Filed 2004·Granted Feb 23, 2010·13 cites·13 claims
- 2970US8105905B2Configuration and method to form MOSFET devices with low resistance silicide gate and mesa contact regionsHU YONGZHONG·Filed 2010·Granted Jan 31, 2012·2 cites·6 claims
- 3070US7632733B2Polysilicon control etch-back indicatorALPHA & OMEGA SEMICONDUCTOR·Filed 2006·Granted Dec 15, 2009·2 cites·10 claims
- 3166US8835251B2Formation of high sheet resistance resistors and high capacitance capacitors by a single polysilicon processHU YONGZHONG·Filed 2010·Granted Sep 16, 2014·2 cites·15 claims
- 3265US8008151B2Shallow source MOSFETALPHA & OMEGA SEMICONDUCTOR·Filed 2007·Granted Aug 30, 2011·2 cites·10 claims
- 3358US8022482B2Device configuration of asymmetrical DMOSFET with schottky barrier sourceALPHA & OMEGA SEMICONDUCTOR·Filed 2006·Granted Sep 20, 2011·1 cites·13 claims
- 3458US7805687B2One-time programmable (OTP) memory cellALPHA & OMEGA SEMICONDUCTOR·Filed 2006·Granted Sep 28, 2010·1 cites·22 claims
- 3555US10896968B2Device structure and manufacturing method using HDP deposited source-body implant blockBHALLA ANUP·Filed 2017·Granted Jan 19, 2021·0 cites·6 claims
- 3655US8471368B2Polysilicon control etch back indicatorWANG YU·Filed 2012·Granted Jun 25, 2013·0 cites·4 claims
- 3753US8193061B2Polysilicon control etch-back indicatorWANG YU·Filed 2011·Granted Jun 5, 2012·0 cites·6 claims
- 3852US8236653B2Configuration and method to form MOSFET devices with low resistance silicide gate and mesa contact regionsHU YONGZHONG·Filed 2012·Granted Aug 7, 2012·0 cites·16 claims
- 3951US2010015770A1Double gate manufactured with locos techniquesALPHA & OMEGA SEMICONDUCTOR·Filed 2009·Application pending·0 cites
- 4049US8847306B2Direct contact in trench with three-mask shield gate processTAI SUNG-SHAN·Filed 2012·Granted Sep 30, 2014·0 cites·13 claims
- 4149US8524558B2Split gate with different gate materials and work functions to reduce gate resistance of ultra high density MOSFETTAI SUNG-SHAN·Filed 2011·Granted Sep 3, 2013·0 cites·9 claims
- 4248US9716156B2Device structure and manufacturing method using HDP deposited source-body implant blockALPHA & OMEGA SEMICONDUCTOR·Filed 2015·Granted Jul 25, 2017·0 cites·9 claims
- 4348US2008296673A1Double gate manufactured with locos techniquesALPHA & OMEGA SEMICONDUCTOR·Filed 2007·Application pending·0 cites
- 4448US2011042724A1Trenched mosfets with part of the device formed on a (110) crystal planeBHALLA ANUP·Filed 2005·Application pending·0 cites
- 4545US2008150013A1Split gate formation with high density plasma (HDP) oxide layer as inter-polysilicon insulation layerALPHA & OMEGA SEMICONDUCTOR·Filed 2006·Application pending·0 cites
- 4641US2006108635A1Trenched MOSFETS with part of the device formed on a (110) crystal planeALPHA OMEGA SEMICONDUCTOR LTD·Filed 2004·Application pending·0 cites
- 4739US8643094B2Method of forming a self-aligned contact opening in MOSFETTAI SUNG-SHAN·Filed 2011·Granted Feb 4, 2014·0 cites·11 claims
- 4839US2007075360A1Cobalt silicon contact barrier metal process for high density semiconductor power devicesALPHA & OMEGA SEMICONDUCTOR·Filed 2005·Application pending·0 cites
- 4935US2013001699A1Trench junction barrier schottky structure with enhanced contact area integrated with a mosfetSINOPOWER SEMICONDUCTOR INC·Filed 2011·Application pending·0 cites
- 5034US8536646B2Trench type power transistor deviceYEH TENG-HAO·Filed 2011·Granted Sep 17, 2013·0 cites·12 claims
Showing the top 50 of 51 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →