Inventor · disambiguated record
Andrew Christopher Graeme Wood
Also filed as: WOOD ANDREW · WOOD ANDREW C G · WOOD ANDREW CHRISTOPHER GRAEME
27 granted patents·3 pending applications·55 citations·filing 2002–2021
93Inventor score
Files withINFINEON TECHNOLOGIES AG21INFINEON TECHNOLOGIES AUSTRIA AG3WOOD ANDREW3INFINEON TECHNOLOGIES AUSTRIA2ZETEX PLC1
Top patents by PatentIndex Score
30 records- 0181US9070765B2Semiconductor device with low on resistance and high breakdown voltageINFINEON TECHNOLOGIES AG·Filed 2013·Granted Jun 30, 2015·5 cites·28 claims
- 0280US11018250B2Semiconductor device with multi-branch gate contact structureINFINEON TECHNOLOGIES AG·Filed 2019·Granted May 25, 2021·2 cites·17 claims
- 0380US9356141B2Semiconductor device having peripheral trench structuresINFINEON TECHNOLOGIES AG·Filed 2014·Granted May 31, 2016·4 cites·17 claims
- 0480US8896047B2Termination arrangement for vertical MOSFETWOOD ANDREW·Filed 2012·Granted Nov 25, 2014·4 cites·13 claims
- 0576US8362551B2Semiconductor deviceINFINEON TECHNOLOGIES AUSTRIA·Filed 2011·Granted Jan 29, 2013·4 cites·22 claims
- 0674US6940145B2Termination structure for a semiconductor deviceZETEX PLC·Filed 2002·Granted Sep 6, 2005·27 cites·32 claims
- 0773US9871119B2Method of manufacturing a termination arrangement for a vertical MOSFETINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2014·Granted Jan 16, 2018·2 cites·21 claims
- 0871US8269282B2Semiconductor component and method for producing a semiconductor componentWOOD ANDREW·Filed 2010·Granted Sep 18, 2012·3 cites·5 claims
- 0970US10580753B2Method for manufacturing semiconductor devicesINFINEON TECHNOLOGIES AG·Filed 2017·Granted Mar 3, 2020·2 cites·16 claims
- 1068US9171950B2Semiconductor component and method for producing a semiconductor componentWOOD ANDREW·Filed 2012·Granted Oct 27, 2015·2 cites·14 claims
- 1161US11695069B2Gate contact structure for semiconductor deviceINFINEON TECHNOLOGIES AG·Filed 2021·Granted Jul 4, 2023·0 cites·23 claims
- 1256US10535576B2Semiconductor devices and methods of formation thereofINFINEON TECHNOLOGIES AG·Filed 2017·Granted Jan 14, 2020·0 cites·15 claims
- 1354US9799583B2Semiconductor devices and methods of formation thereofINFINEON TECHNOLOGIES AG·Filed 2013·Granted Oct 24, 2017·0 cites·20 claims
- 1454US9391192B2Field effect semiconductor component and method for producing itINFINEON TECHNOLOGIES AG·Filed 2014·Granted Jul 12, 2016·0 cites·20 claims
- 1552US10090215B2System and method for dual-region singulationINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2017·Granted Oct 2, 2018·0 cites·19 claims
- 1652US9917160B2Semiconductor device having a polycrystalline silicon IGFETINFINEON TECHNOLOGIES AG·Filed 2016·Granted Mar 13, 2018·0 cites·11 claims
- 1751US8044459B2Semiconductor device with trench field plate including first and second semiconductor materialsINFINEON TECHNOLOGIES AUSTRIA·Filed 2008·Granted Oct 25, 2011·0 cites·22 claims
- 1850US10340197B2Integrated circuit substrate having configurable circuit elementsINFINEON TECHNOLOGIES AG·Filed 2017·Granted Jul 2, 2019·0 cites·12 claims
- 1950US9786568B2Method of manufacturing an integrated circuit substrateINFINEON TECHNOLOGIES AG·Filed 2016·Granted Oct 10, 2017·0 cites·25 claims
- 2049US9847387B2Field effect semiconductor component and method for producing itINFINEON TECHNOLOGIES AG·Filed 2016·Granted Dec 19, 2017·0 cites·19 claims
- 2147US9583406B2System and method for dual-region singulationINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2015·Granted Feb 28, 2017·0 cites·33 claims
- 2244US10453915B2Semiconductor device having a field electrode and a gate electrode in a trench structure and manufacturing methodINFINEON TECHNOLOGIES AG·Filed 2018·Granted Oct 22, 2019·0 cites·22 claims
- 2344US2019334000A1Transistor ComponentINFINEON TECHNOLOGIES AG·Filed 2019·Application pending·0 cites
- 2443US2015263165A1Semiconductor Device Having a Charge Compensation RegionINFINEON TECHNOLOGIES AG·Filed 2015·Application pending·0 cites
- 2542US10269635B2Integrated circuit substrate and method for manufacturing the sameINFINEON TECHNOLOGIES AG·Filed 2016·Granted Apr 23, 2019·0 cites·16 claims
- 2641US11127853B2Power transistor device including first and second transistor cells having different on-resistances for improved thermal stabilityINFINEON TECHNOLOGIES AG·Filed 2019·Granted Sep 21, 2021·0 cites·15 claims
- 2741US10593799B2Semiconductor component comprising trench structures and production method thereforINFINEON TECHNOLOGIES AG·Filed 2018·Granted Mar 17, 2020·0 cites·22 claims
- 2839US10580656B2Method of reducing trench depth variation from reactive ion etching processINFINEON TECHNOLOGIES AG·Filed 2018·Granted Mar 3, 2020·0 cites·28 claims
- 2938US9899277B2Integrated circuit substrate and method for manufacturing the sameINFINEON TECHNOLOGIES AG·Filed 2016·Granted Feb 20, 2018·0 cites·17 claims
- 3034US2017242137A1Electronic device substrate and method for manufacturing the sameINFINEON TECHNOLOGIES AG·Filed 2017·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →