Inventor · disambiguated record
Katsuyuki Horita
Also filed as: HORITA KATSUYUKI
47 granted patents·12 pending applications·760 citations·filing 1997–2016
98Inventor score
Files withMITSUBISHI ELECTRIC CORP26RENESAS TECH CORP17RENESAS ELECTRONICS CORP11HORITA KATSUYUKI2ISHIBASHI MASATO1
Top patents by PatentIndex Score
59 records- 0193US6274457B1Method for manufacturing an isolation trench having plural profile anglesMITSUBISHI ELECTRIC CORP·Filed 2000·Granted Aug 14, 2001·82 cites·4 claims
- 0291US5889335ASemiconductor device and method of manufacturing the sameMITSUBISHI ELECTRIC CORP·Filed 1998·Granted Mar 30, 1999·105 cites·7 claims
- 0388US6998319B2Method of manufacturing semiconductor device capable of suppressing impurity concentration reduction in doped channel region arising from formation of gate insulating filmRENESAS TECH CORP·Filed 2003·Granted Feb 14, 2006·33 cites·19 claims
- 0484US6218262B1Semiconductor device and method of manufacturing the sameMITSUBISHI ELECTRIC CORP·Filed 1998·Granted Apr 17, 2001·62 cites·6 claims
- 0583US8384187B2Semiconductor device with shallow trench isolationRENESAS ELECTRONICS CORP·Filed 2010·Granted Feb 26, 2013·6 cites·8 claims
- 0682US6503799B2Method of manufacturing semiconductor deviceMITSUBISHI ELECTRIC CORP·Filed 2001·Granted Jan 7, 2003·29 cites·7 claims
- 0780US6777758B2Semiconductor deviceRENESAS TECH CORP·Filed 2001·Granted Aug 17, 2004·31 cites·14 claims
- 0878US9343527B2Semiconductor device including an isolation film buried in a grooveRENESAS ELECTRONICS CORP·Filed 2012·Granted May 17, 2016·3 cites·7 claims
- 0978US9024386B2Semiconductor device and method of manufacturing the sameRENESAS ELECTRONICS CORP·Filed 2012·Granted May 5, 2015·3 cites·17 claims
- 1078US6482718B2Method of manufacturing semiconductor deviceMITSUBISHI ELECTRIC CORP·Filed 2001·Granted Nov 19, 2002·27 cites·10 claims
- 1176US8975699B2Semiconductor deviceRENESAS ELECTRONICS CORP·Filed 2014·Granted Mar 10, 2015·3 cites·2 claims
- 1276US6541825B2Semiconductor device including impurity layer having continuous portions formed at different depths and method of manufacturing the sameMITSUBISHI ELECTRIC CORP·Filed 2001·Granted Apr 1, 2003·21 cites·5 claims
- 1375US6399985B2Semiconductor deviceMITSUBISHI ELECTRIC CORP·Filed 2001·Granted Jun 4, 2002·17 cites·8 claims
- 1475US6034409AIsolation trench having plural profile anglesMITSUBISHI ELECTRIC CORP·Filed 1998·Granted Mar 7, 2000·40 cites·2 claims
- 1573US9029951B2Semiconductor device having well regions with opposite conductivityHORITA KATSUYUKI·Filed 2012·Granted May 12, 2015·3 cites·18 claims
- 1673US7791163B2Semiconductor device and its manufacturing methodRENESAS TECH CORP·Filed 2005·Granted Sep 7, 2010·5 cites·15 claims
- 1772US8536017B2Method of manufacturing semiconductor deviceKADOSHIMA MASARU·Filed 2012·Granted Sep 17, 2013·4 cites·5 claims
- 1871US6548871B1Semiconductor device achieving reduced wiring length and reduced wiring delay by forming first layer wiring and gate upper electrode in same wire layerMITSUBISHI ELECTRIC CORP·Filed 2000·Granted Apr 15, 2003·19 cites·8 claims
- 1970US6841440B2Semiconductor device including impurity layer having continuous portions formed at different depths and method of manufacturing the sameRENESAS TECH CORP·Filed 2003·Granted Jan 11, 2005·15 cites·8 claims
- 2070US6383884B1Method of manufacturing semiconductor deviceMITSUBISHI ELECTRIC CORP·Filed 2000·Granted May 7, 2002·16 cites·14 claims
- 2170US6127737ASemiconductor device and manufacturing method thereofMITSUBISHI ELECTRIC CORP·Filed 1997·Granted Oct 3, 2000·39 cites·5 claims
- 2269US8872267B2Semiconductor deviceRENESAS ELECTRONICS CORP·Filed 2012·Granted Oct 28, 2014·2 cites·19 claims
- 2368US9484271B2Semiconductor device and method of manufacturing the sameRENESAS ELECTRONICS CORP·Filed 2015·Granted Nov 1, 2016·1 cites·6 claims
- 2468US6372604B1Method for forming a trench type element isolation structure and trench type element isolation structureMITSUBISHI ELECTRIC CORP·Filed 2001·Granted Apr 16, 2002·13 cites·17 claims
- 2566US7691713B2Method of manufacturing semiconductor device capable of suppressing impurity concentration reduction in doped channel region arising from formation of gate insulating filmRENESAS TECH CORP·Filed 2007·Granted Apr 6, 2010·1 cites·4 claims
- 2666US6744113B2Semiconductor device with element isolation using impurity-doped insulator and oxynitride filmRENESAS TECH CORP·Filed 2003·Granted Jun 1, 2004·13 cites·10 claims
- 2765US6661066B2Semiconductor device including inversely tapered gate electrode and manufacturing method thereofMITSUBISHI ELECTRIC CORP·Filed 1999·Granted Dec 9, 2003·23 cites·2 claims
- 2864US6303432B1Method of manufacturing a semiconductor deviceMITSUBISHI ELECTRIC CORP·Filed 1999·Granted Oct 16, 2001·35 cites·18 claims
- 2964US6265743B1Trench type element isolation structureMITSUBISHI ELECTRIC CORP·Filed 1997·Granted Jul 24, 2001·26 cites·4 claims
- 3055US6737315B2Method of manufacturing semiconductor device including steps of forming both insulating film and epitaxial semiconductor on substrateRENESAS TECH CORP·Filed 2002·Granted May 18, 2004·5 cites·9 claims
- 3155US6498077B2Semiconductor device and method of manufacturing sameMITSUBISHI ELECTRIC CORP·Filed 2001·Granted Dec 24, 2002·5 cites·25 claims
- 3253US9287259B2Semiconductor integrated circuit device and method for manufacturing semiconductor integrated circuit deviceSHINOHARA HIROFUMI·Filed 2012·Granted Mar 15, 2016·1 cites·2 claims
- 3353US7244655B2Method of manufacturing semiconductor device capable of suppressing impurity concentration reduction in doped channel region arising from formation of gate insulating filmRENESAS TECH CORP·Filed 2005·Granted Jul 17, 2007·0 cites·4 claims
- 3453US6890837B2Method of manufacturing semiconductor device including steps of forming both insulating film and epitaxial semiconductor on substrateRENESAS TECH CORP·Filed 2003·Granted May 10, 2005·4 cites·3 claims
- 3552US9029237B2Semiconductor device and method of manufacturing the sameRENESAS ELECTRONICS CORP·Filed 2013·Granted May 12, 2015·0 cites·6 claims
- 3651US2006027883A1Semiconductor device and manufacturing method thereofRENESAS TECH CORP·Filed 2005·Application pending·0 cites
- 3750US6017800ASemiconductor device and method of fabricating thereofMITSUBISHI ELECTRIC CORP·Filed 1997·Granted Jan 25, 2000·16 cites·4 claims
- 3850US2010190306A1Method of manufacturing semiconductor device capable of suppressing impurity concentration reduction in doped channel region arising from formation of gate insulating filmRENESAS TECH CORP·Filed 2010·Application pending·0 cites
- 3949US2015221722A1Semiconductor device with shallow trench isolationRENESAS ELECTRONICS CORP·Filed 2015·Application pending·0 cites
- 4048US2016181147A1Semiconductor device and method of manufacturing the sameRENESAS ELECTRONICS CORP·Filed 2016·Application pending·0 cites
- 4147US9142567B2SOI SRAM having well regions with opposite conductivityRENESAS ELECTRONICS CORP·Filed 2015·Granted Sep 22, 2015·0 cites·1 claims
- 4246US6707099B2Semiconductor device and manufacturing method thereofRENESAS TECH CORP·Filed 2002·Granted Mar 16, 2004·2 cites·5 claims
- 4346US6323102B1Method of manufacturing a semiconductor deviceMITSUBISHI ELECTRIC CORP·Filed 1998·Granted Nov 27, 2001·12 cites·2 claims
- 4446US2008113480A1Method of manufacturing semiconductor deviceRENESAS TECH CORP·Filed 2007·Application pending·0 cites
- 4545US8043918B2Semiconductor device and its manufacturing methodRENESAS ELECTRONICS CORP·Filed 2010·Granted Oct 25, 2011·0 cites·19 claims
- 4645US6214695B1Method of manufacturing semiconductor deviceMITSUBISHI ELECTRIC CORP·Filed 1999·Granted Apr 10, 2001·12 cites·11 claims
- 4743US2004092057A1Semiconductor device and manufacturing method thereofMITSUBISHI ELECTRIC CORP·Filed 2003·Application pending·0 cites
- 4842US6150233ASemiconductor device and method of manufacturing the sameMITSUBISHI ELECTRIC CORP·Filed 1998·Granted Nov 21, 2000·10 cites·7 claims
- 4940US8592284B2Semiconductor device and manufacturing method thereofISHIBASHI MASATO·Filed 2009·Granted Nov 26, 2013·0 cites·6 claims
- 5040US6162669AMethod of manufacturing a semiconductor device having an LDD structure with a recess in the source/drain region formed during removal of a damaged layerMITSUBISHI ELECTRIC CORP·Filed 1999·Granted Dec 19, 2000·5 cites·6 claims
Showing the top 50 of 59 patent records by PatentIndex Score.
Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →