Inventor · disambiguated record
Min-Chul Sun
Also filed as: SUN MIN · SUN MIN-CHUL
36 granted patents·10 pending applications·348 citations·filing 2002–2023
97Inventor score
Files withSAMSUNG ELECTRONICS CO LTD31SUN MIN-CHUL8MASSACHUSETTS INST TECHNOLOGY2BEIJING LENOVO SOFTWARE LTD1IBM1
Top patents by PatentIndex Score
46 records- 0198US7679083B2Semiconductor integrated test structures for electron beam inspection of semiconductor wafersSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted Mar 16, 2010·105 cites·19 claims
- 0297US7772866B2Structure and method of mapping signal intensity to surface voltage for integrated circuit inspectionIBM·Filed 2007·Granted Aug 10, 2010·85 cites·20 claims
- 0395US9583583B2Semiconductor device with nanowires in different regions at different heightsSAMSUNG ELECTRONICS CO LTD·Filed 2015·Granted Feb 28, 2017·10 cites·9 claims
- 0495US9087922B2Semiconductor devices having vertical device and non-vertical device and methods of forming the sameSUN MIN-CHUL·Filed 2012·Granted Jul 21, 2015·23 cites·24 claims
- 0593US9219119B2Semiconductor device with nanowires in different regions at different heights and fabricating method thereofSAMSUNG ELECTRONICS CO LTD·Filed 2013·Granted Dec 22, 2015·11 cites·15 claims
- 0692US9570600B2Semiconductor structure and recess formation etch techniqueMASSACHUSETTS INST TECHNOLOGY·Filed 2013·Granted Feb 14, 2017·15 cites·45 claims
- 0790US10014219B2Semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2017·Granted Jul 3, 2018·4 cites·4 claims
- 0887US12261087B2Methods of manufacturing semiconductor devices by etching active fins using etching masks and forming source/drain layers on the active finsSAMSUNG ELECTRONICS CO LTD·Filed 2023·Granted Mar 25, 2025·0 cites·19 claims
- 0986US7084061B2Methods of fabricating a semiconductor device having MOS transistor with strained channelSAMSUNG ELECTRONICS CO LTD·Filed 2004·Granted Aug 1, 2006·36 cites·27 claims
- 1084US10615080B2Methods of manufacturing semiconductor devices by etching active fins using etching masksSAMSUNG ELECTRONICS CO LTD·Filed 2018·Granted Apr 7, 2020·2 cites·7 claims
- 1184US10529801B2Semiconductor device including isolation regionsSAMSUNG ELECTRONICS CO LTD·Filed 2018·Granted Jan 7, 2020·3 cites·20 claims
- 1283US12261200B2Semiconductor device including isolation regionsSAMSUNG ELECTRONICS CO LTD·Filed 2023·Granted Mar 25, 2025·0 cites·19 claims
- 1381US9461054B2Semiconductor devices having vertical device and non-vertical device and methods of forming the sameSAMSUNG ELECTRONICS CO LTD·Filed 2015·Granted Oct 4, 2016·3 cites·20 claims
- 1480US11830911B2Semiconductor device including isolation regionsSAMSUNG ELECTRONICS CO LTD·Filed 2023·Granted Nov 28, 2023·0 cites·20 claims
- 1580US11830775B2Methods of manufacturing semiconductor devices by etching active fins using etching masksSAMSUNG ELECTRONICS CO LTD·Filed 2022·Granted Nov 28, 2023·0 cites·10 claims
- 1676US7465617B2Method of fabricating a semiconductor device having a silicon oxide layer, a method of fabricating a semiconductor device having dual spacers, a method of forming a silicon oxide layer on a substrate, and a method of forming dual spacers on a conductive material layerSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Dec 16, 2008·4 cites·19 claims
- 1775US10964782B2Semiconductor device including isolation regionsSAMSUNG ELECTRONICS CO LTD·Filed 2019·Granted Mar 30, 2021·1 cites·20 claims
- 1872US11575002B2Semiconductor device including isolation regionsSAMSUNG ELECTRONICS CO LTD·Filed 2021·Granted Feb 7, 2023·0 cites·20 claims
- 1972US11302585B2Methods of manufacturing semiconductor devices by etching active fins using etching masksSAMSUNG ELECTRONICS CO LTD·Filed 2020·Granted Apr 12, 2022·0 cites·12 claims
- 2072US7781322B2Nickel alloy salicide transistor structure and method for manufacturing sameSAMSUNG ELECTRONICS CO LTD·Filed 2003·Granted Aug 24, 2010·14 cites·34 claims
- 2170US7307320B2Differential mechanical stress-producing regions for integrated circuit field effect transistorsSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Dec 11, 2007·4 cites·26 claims
- 2268US10256352B2Structures for nitride vertical transistorsMASSACHUSETTS INST TECHNOLOGY·Filed 2016·Granted Apr 9, 2019·1 cites·23 claims
- 2366US7501651B2Test structure of semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Mar 10, 2009·2 cites·24 claims
- 2464US7317204B2Test structure of semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Jan 8, 2008·2 cites·28 claims
- 2562US6797559B2Method of fabricating semiconductor device having metal conducting layerSAMSUNG ELECTRONICS CO LTD·Filed 2002·Granted Sep 28, 2004·10 cites·20 claims
- 2661US10109532B2Methods of manufacturing finFET semiconductor devicesSAMSUNG ELECTRONICS CO LTD·Filed 2017·Granted Oct 23, 2018·0 cites·12 claims
- 2761US7232756B2Nickel salicide process with reduced dopant deactivationSAMSUNG ELECTRONICS CO LTD·Filed 2004·Granted Jun 19, 2007·9 cites·38 claims
- 2860US8928080B2Field-effect transistor having back gate and method of fabricating the sameSUN MIN-CHUL·Filed 2012·Granted Jan 6, 2015·1 cites·13 claims
- 2960US8557691B2Method of fabricating semiconductor device having buried wiring and related deviceSUN MIN-CHUL·Filed 2012·Granted Oct 15, 2013·1 cites·19 claims
- 3054US9634093B2Method for fabricating semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2016·Granted Apr 25, 2017·0 cites·10 claims
- 3154US9343549B2Semiconductor device and method for fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2013·Granted May 17, 2016·0 cites·4 claims
- 3251US7005367B2Method of fabricating a semiconductor device having a silicon oxide layer, a method of fabricating a semiconductor device having dual spacers, a method of forming a silicon oxide layer on a substrate, and a method of forming dual spacers on a conductive material layerSAMSUNG ELECTRONICS CO LTD·Filed 2003·Granted Feb 28, 2006·2 cites·69 claims
- 3349US2014035051A1Semiconductor device and associated methodsSAMSUNG ELECTRONICS CO LTD·Filed 2013·Application pending·0 cites
- 3449US2009256214A1Semiconductor device and associated methodsSUN MIN-CHUL·Filed 2009·Application pending·0 cites
- 3546US7928482B2Gate structureSAMSUNG ELECTRONICS CO LTD·Filed 2009·Granted Apr 19, 2011·0 cites·4 claims
- 3645US9490528B2Electronic device and method of manufacturing a housing for the sameBEIJING LENOVO SOFTWARE LTD·Filed 2014·Granted Nov 8, 2016·0 cites·12 claims
- 3745US7790622B2Methods for removing gate sidewall spacers in CMOS semiconductor fabrication processesSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted Sep 7, 2010·0 cites·36 claims
- 3845US2012164807A1Method of fabricating a semiconductor deviceSUN MIN-CHUL·Filed 2012·Application pending·0 cites
- 3944US2009163016A1Method of fabricating a semiconductor device including metal gate electrode and electronic fuseSAMSUNG ELECTRONICS CO LTD·Filed 2008·Application pending·0 cites
- 4043US2005236715A1Nickel alloy salicide transistor structure and method for manufacturing sameKU JA-HUM·Filed 2005·Application pending·0 cites
- 4142US2008124859A1Methods of Forming CMOS Integrated Circuits Using Gate Sidewall Spacer Reduction TechniquesSUN MIN CHUL·Filed 2006·Application pending·0 cites
- 4242US2007298600A1Method of Fabricating Semiconductor Device and Semiconductor Device Fabricated TherebySUH BONG-SEOK·Filed 2006·Application pending·0 cites
- 4341US8481392B1Methods of fabricating semiconductor device using high-K layer for spacer etch stop and related devicesSUN MIN-CHUL·Filed 2012·Granted Jul 9, 2013·0 cites·20 claims
- 4438US2006003534A1Salicide process using bi-metal layer and method of fabricating semiconductor device using the sameSAMSUNG ELECTRONICS CO LTD·Filed 2005·Application pending·0 cites
- 4536US2005158996A1Nickel salicide processes and methods of fabricating semiconductor devices using the sameFiled 2004·Application pending·0 cites
- 4636US2006223296A1Semiconductor device having self-aligned silicide layer and method thereofSUN MIN-CHUL·Filed 2005·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →