Inventor · disambiguated record
Casey Scott
Also filed as: SCOTT CASEY
13 granted patents·3 pending applications·69 citations·filing 2007–2012
90Inventor score
Top patents by PatentIndex Score
16 records- 0188US7811876B2Reduction of memory instability by local adaptation of re-crystallization conditions in a cache area of a semiconductor deviceGLOBALFOUNDRIES INC·Filed 2008·Granted Oct 12, 2010·14 cites·19 claims
- 0286US8227266B2Test structure for monitoring process characteristics for forming embedded semiconductor alloys in drain/source regionsMOWRY ANTHONY·Filed 2010·Granted Jul 24, 2012·6 cites·7 claims
- 0386US8212184B2Cold temperature control in a semiconductor deviceMOWRY ANTHONY·Filed 2009·Granted Jul 3, 2012·15 cites·25 claims
- 0483US7713763B2Test structure for monitoring process characteristics for forming embedded semiconductor alloys in drain/source regionsADVANCED MICRO DEVICES INC·Filed 2008·Granted May 11, 2010·6 cites·11 claims
- 0580US8093634B2In situ formed drain and source regions in a silicon/germanium containing transistor deviceMOWRY ANTHONY·Filed 2009·Granted Jan 10, 2012·9 cites·5 claims
- 0679US8183100B2Transistor with embedded SI/GE material having enhanced across-substrate uniformityMULFINGER ROBERT·Filed 2009·Granted May 22, 2012·7 cites·16 claims
- 0779US8138050B2Transistor device comprising an asymmetric embedded semiconductor alloyPAPAGEORGIOU VASSILIOS·Filed 2009·Granted Mar 20, 2012·7 cites·23 claims
- 0863US9450073B2SOI transistor having drain and source regions of reduced length and a stressed dielectric material adjacent theretoWEI ANDY·Filed 2007·Granted Sep 20, 2016·2 cites·23 claims
- 0962US7897451B2Method for creating tensile strain by selectively applying stress memorization techniques to NMOS transistorsGLOBALFOUNDRIES INC·Filed 2008·Granted Mar 1, 2011·1 cites·21 claims
- 1054US8530894B2Test structure for monitoring process characteristics for forming embedded semiconductor alloys in drain/source regionsMOWRY ANTHONY·Filed 2012·Granted Sep 10, 2013·0 cites·7 claims
- 1154US8373244B2Temperature monitoring in a semiconductor device by thermocouples distributed in the contact structureGLOBALFOUNDRIES INC·Filed 2008·Granted Feb 12, 2013·2 cites·17 claims
- 1249US8334569B2Transistor with embedded Si/Ge material having enhanced across-substrate uniformityMULFINGER ROBERT·Filed 2012·Granted Dec 18, 2012·0 cites·13 claims
- 1346US2008268597A1Technique for enhancing dopant activation by using multiple sequential advanced laser/flash anneal processesWEI ANDY·Filed 2007·Application pending·0 cites
- 1445US2009085652A1Compensation of operating time related degradation of operating speed by adapting the supply voltageWIATR MACIEJ·Filed 2008·Application pending·0 cites
- 1544US2010090321A1High-k etch stop layer of reduced thickness for patterning a dielectric material during fabrication of transistorsMULFINGER ROBERT·Filed 2008·Application pending·0 cites
- 1639US8652913B2Method for forming silicon/germanium containing drain/source regions in transistors with reduced silicon/germanium lossGEHRING ANDREAS·Filed 2007·Granted Feb 18, 2014·0 cites·16 claims
Join the waitlist — get patent alerts
Get an alert when Casey Scott files or is granted a new patent.
We store only your email — no account needed. See our privacy policy.
Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →