Inventor · disambiguated record
George Jonathan Kluth
Also filed as: KLUTH GEORGE · KLUTH GEORGE J · KLUTH GEORGE JONATHAN
35 granted patents·1 pending application·990 citations·filing 2000–2017
98Inventor score
Top patents by PatentIndex Score
36 records- 0197US8048791B2Method of forming a semiconductor deviceGLOBALFOUNDRIES INC·Filed 2009·Granted Nov 1, 2011·122 cites·17 claims
- 0296US6797602B1Method of manufacturing a semiconductor device with supersaturated source/drain extensions and metal silicide contactsADVANCED MICRO DEVICES INC·Filed 2002·Granted Sep 28, 2004·113 cites·18 claims
- 0395US6562718B1Process for forming fully silicided gatesADVANCED MICRO DEVICES INC·Filed 2000·Granted May 13, 2003·107 cites·18 claims
- 0493US6777275B1Single anneal for dopant activation and silicide formationADVANCED MICRO DEVICES INC·Filed 2000·Granted Aug 17, 2004·72 cites·23 claims
- 0589US6555453B1Fully nickel silicided metal gate with shallow junction formedADVANCED MICRO DEVICES INC·Filed 2002·Granted Apr 29, 2003·47 cites·18 claims
- 0689US6451693B1Double silicide formation in polysicon gate without silicide in source/drain extensionsADVANCED MICRO DEVICES INC·Filed 2000·Granted Sep 17, 2002·48 cites·18 claims
- 0789US6410388B1Process for optimizing pocket implant profile by RTA implant annealing for a non-volatile semiconductor deviceADVANCED MICRO DEVICES INC·Filed 2000·Granted Jun 25, 2002·39 cites·18 claims
- 0885US6521515B1Deeply doped source/drains for reduction of silicide/silicon interface roughnessADVANCED MICRO DEVICES INC·Filed 2000·Granted Feb 18, 2003·37 cites·14 claims
- 0985US6380057B1Enhancement of nickel silicide formation by use of nickel pre-amorphizing implantADVANCED MICRO DEVICES INC·Filed 2001·Granted Apr 30, 2002·34 cites·16 claims
- 1084US6872613B1Method for integrating metals having different work functions to form CMOS gates having a high-k gate dielectric and related structureADVANCED MICRO DEVICES INC·Filed 2003·Granted Mar 29, 2005·28 cites·25 claims
- 1182US10347543B2FDSOI semiconductor device with contact enhancement layer and method of manufacturingGLOBALFOUNDRIES INC·Filed 2017·Granted Jul 9, 2019·4 cites·19 claims
- 1282US6495460B1Dual layer silicide formation using a titanium barrier to reduce surface roughness at silicide/junction interfaceADVANCED MICRO DEVICES INC·Filed 2001·Granted Dec 17, 2002·30 cites·19 claims
- 1382US6432817B1Tungsten silicide barrier for nickel silicidation of a gate electrodeADVANCED MICRO DEVICES INC·Filed 2000·Granted Aug 13, 2002·29 cites·19 claims
- 1480US7176531B1CMOS gates formed by integrating metals having different work functions and having a high-k gate dielectricADVANCED MICRO DEVICES INC·Filed 2004·Granted Feb 13, 2007·22 cites·6 claims
- 1580US6602754B1Nitrogen implant into nitride spacer to reduce nickel silicide formation on spacerADVANCED MICRO DEVICES INC·Filed 2002·Granted Aug 5, 2003·23 cites·13 claims
- 1679US6468900B1Dual layer nickel deposition using a cobalt barrier to reduce surface roughness at silicide/junction interfaceADVANCED MICRO DEVICES INC·Filed 2000·Granted Oct 22, 2002·25 cites·18 claims
- 1778US6724051B1Nickel silicide process using non-reactive spacerADVANCED MICRO DEVICES INC·Filed 2000·Granted Apr 20, 2004·24 cites·7 claims
- 1877US6486062B1Selective deposition of amorphous silicon for formation of nickel silicide with smooth interface on N-doped substrateADVANCED MICRO DEVICES INC·Filed 2000·Granted Nov 26, 2002·20 cites·12 claims
- 1973US6627504B1Stacked double sidewall spacer oxide over nitrideADVANCED MICRO DEVICES INC·Filed 2001·Granted Sep 30, 2003·18 cites·10 claims
- 2072US6362095B1Nickel silicide stripping after nickel silicide formationADVANCED MICRO DEVICES INC·Filed 2000·Granted Mar 26, 2002·17 cites·16 claims
- 2171US6605513B2Method of forming nickel silicide using a one-step rapid thermal anneal process and backend processingADVANCED MICRO DEVICES INC·Filed 2000·Granted Aug 12, 2003·16 cites·10 claims
- 2267US6387767B1Nitrogen-rich silicon nitride sidewall spacer depositionADVANCED MICRO DEVICES INC·Filed 2001·Granted May 14, 2002·13 cites·19 claims
- 2365US6841449B1Two-step process for nickel depositionADVANCED MICRO DEVICES INC·Filed 2002·Granted Jan 11, 2005·12 cites·11 claims
- 2465US6632740B1Two-step process for nickel depositionADVANCED MICRO DEVICES INC·Filed 2002·Granted Oct 14, 2003·12 cites·11 claims
- 2565US6562717B1Semiconductor device having multiple thickness nickel silicide layersADVANCED MICRO DEVICES INC·Filed 2000·Granted May 13, 2003·12 cites·14 claims
- 2664US6902977B1Method for forming polysilicon gate on high-k dielectric and related structureADVANCED MICRO DEVICES INC·Filed 2003·Granted Jun 7, 2005·10 cites·12 claims
- 2764US6391730B1Process for fabricating shallow pocket regions in a non-volatile semiconductor deviceADVANCED MICRO DEVICES INC·Filed 2000·Granted May 21, 2002·11 cites·19 claims
- 2864US6376341B1Optimization of thermal cycle for the formation of pocket implantsADVANCED MICRO DEVICES INC·Filed 2000·Granted Apr 23, 2002·11 cites·20 claims
- 2963US7504326B2Use of scanning theme implanters and annealers for selective implantation and annealingADVANCED MICRO DEVICES INC·Filed 2006·Granted Mar 17, 2009·1 cites·4 claims
- 3058US6372673B1Silicon-starved nitride spacer depositionADVANCED MICRO DEVICES INC·Filed 2001·Granted Apr 16, 2002·6 cites·19 claims
- 3157US6541866B1Cobalt barrier for nickel silicidation of a gate electrodeADVANCED MICRO DEVICES INC·Filed 2001·Granted Apr 1, 2003·7 cites·6 claims
- 3256US6730587B1Titanium barrier for nickel silicidation of a gate electrodeADVANCED MICRO DEVICES INC·Filed 2000·Granted May 4, 2004·7 cites·11 claims
- 3356US6689687B1Two-step process for nickel depositionADVANCED MICRO DEVICES INC·Filed 2002·Granted Feb 10, 2004·7 cites·12 claims
- 3453US6544872B1Dopant implantation processing for improved source/drain interface with metal silicidesADVANCED MICRO DEVICES INC·Filed 2001·Granted Apr 8, 2003·4 cites·17 claims
- 3545US6992370B1Memory cell structure having nitride layer with reduced charge loss and method for fabricating sameADVANCED MICRO DEVICES INC·Filed 2003·Granted Jan 31, 2006·2 cites·12 claims
- 3633US2002068444A1Dual layer silicide formation using an aluminum barrier to reduce surface roughness at silicide/junction interfaceFiled 2000·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →