Inventor · disambiguated record
Benjamin A. Haskell
Also filed as: HASKELL BENJAMIN · HASKELL BENJAMIN A · HASKELL BENJAMIN ALLEN
32 granted patents·17 pending applications·1,052 citations·filing 2003–2022
97Inventor score
Top patents by PatentIndex Score
49 records- 0198US7691658B2Method for improved growth of semipolar (Al,In,Ga,B)NUNIV CALIFORNIA·Filed 2007·Granted Apr 6, 2010·266 cites·26 claims
- 0298US7220324B2Technique for the growth of planar semi-polar gallium nitrideUNIV CALIFORNIA·Filed 2006·Granted May 22, 2007·317 cites·18 claims
- 0398US7208393B2Growth of planar reduced dislocation density m-plane gallium nitride by hydride vapor phase epitaxyUNIV CALIFORNIA·Filed 2005·Granted Apr 24, 2007·104 cites·19 claims
- 0498US7186302B2Fabrication of nonpolar indium gallium nitride thin films, heterostructures and devices by metalorganic chemical vapor depositionJAPAN SCIENCE & TECH AGENCY·Filed 2005·Granted Mar 6, 2007·87 cites·20 claims
- 0596US7846757B2Technique for the growth and fabrication of semipolar (Ga,A1,In,B)N thin films, heterostructures, and devicesUNIV CALIFORNIA·Filed 2006·Granted Dec 7, 2010·33 cites·23 claims
- 0696US7220658B2Growth of reduced dislocation density non-polar gallium nitride by hydride vapor phase epitaxyUNIV CALIFORNIA·Filed 2003·Granted May 22, 2007·105 cites·21 claims
- 0793US7704331B2Technique for the growth of planar semi-polar gallium nitrideUNIV CALIFORNIA·Filed 2007·Granted Apr 27, 2010·14 cites·30 claims
- 0893US7687293B2Method for enhancing growth of semipolar (Al,In,Ga,B)N via metalorganic chemical vapor depositionUNIV CALIFORNIA·Filed 2007·Granted Mar 30, 2010·17 cites·14 claims
- 0993US7504274B2Fabrication of nonpolar indium gallium nitride thin films, heterostructures and devices by metalorganic chemical vapor depositionUNIV CALIFORNIA·Filed 2007·Granted Mar 17, 2009·16 cites·12 claims
- 1092US7956360B2Growth of planar reduced dislocation density M-plane gallium nitride by hydride vapor phase epitaxyUNIV CALIFORNIA·Filed 2007·Granted Jun 7, 2011·15 cites·7 claims
- 1192US7575947B2Method for enhancing growth of semi-polar (Al,In,Ga,B)N via metalorganic chemical vapor depositionUNIV CALIFORNIA·Filed 2006·Granted Aug 18, 2009·20 cites·12 claims
- 1289US7847293B2Growth of reduced dislocation density non-polar gallium nitrideUNIV CALIFORNIA·Filed 2007·Granted Dec 7, 2010·10 cites·9 claims
- 1386US8368179B2Miscut semipolar optoelectronic deviceUNIV CALIFORNIA·Filed 2011·Granted Feb 5, 2013·5 cites·39 claims
- 1485US8110482B2Miscut semipolar optoelectronic deviceKAEDING JOHN F·Filed 2010·Granted Feb 7, 2012·6 cites·38 claims
- 1584US8128756B2Technique for the growth of planar semi-polar gallium nitrideBAKER TROY J·Filed 2010·Granted Mar 6, 2012·5 cites·16 claims
- 1678US8148244B2Lateral growth method for defect reduction of semipolar nitride filmsBAKER TROY J·Filed 2006·Granted Apr 3, 2012·5 cites·19 claims
- 1777US9978582B2Methods for improving wafer planarity and bonded wafer assemblies made from the methodsOSTENDO TECHNOLOGIES INC·Filed 2016·Granted May 22, 2018·3 cites·20 claims
- 1876US8882935B2Fabrication of nonpolar indium gallium nitride thin films, heterostructures, and devices by metalorganic chemical vapor depositionCHAKRABORTY ARPAN·Filed 2013·Granted Nov 11, 2014·2 cites·23 claims
- 1975US8502246B2Fabrication of nonpolar indium gallium nitride thin films, heterostructures and devices by metalorganic chemical vapor depositionCHAKRABORTY ARPAN·Filed 2009·Granted Aug 6, 2013·3 cites·22 claims
- 2074US8524012B2Technique for the growth of planar semi-polar gallium nitrideBAKER TROY J·Filed 2012·Granted Sep 3, 2013·2 cites·26 claims
- 2171US9660135B2Enhanced performance active pixel array and epitaxial growth method for achieving the sameOSTENDO TECHNOLOGIES INC·Filed 2014·Granted May 23, 2017·2 cites·40 claims
- 2271US8686466B2Technique for the growth and fabrication of semipolar (Ga,Al,In,B)N thin films, heterostructures, and devicesFARRELL JR ROBERT M·Filed 2010·Granted Apr 1, 2014·2 cites·26 claims
- 2369US11322652B2Methods for producing composite GaN nanocolumns and light emitting structures made from the methodsOSTENDO TECHNOLOGIES INC·Filed 2016·Granted May 3, 2022·1 cites·22 claims
- 2468US7427555B2Growth of planar, non-polar gallium nitride by hydride vapor phase epitaxyUNIV CALIFORNIA·Filed 2003·Granted Sep 23, 2008·11 cites·18 claims
- 2564US9443727B2Semi-polar III-nitride films and materials and method for making the sameOSTENDO TECHNOLOGIES INC·Filed 2014·Granted Sep 13, 2016·1 cites·20 claims
- 2662US10529892B2Technique for the growth and fabrication of semipolar (Ga,Al,In,B)N thin films, heterostructures, and devicesUNIV CALIFORNIA·Filed 2017·Granted Jan 7, 2020·0 cites·20 claims
- 2760US9231376B2Technique for the growth and fabrication of semipolar (Ga,Al,In,B)N thin films, heterostructures, and devicesUNIV CALIFORNIA·Filed 2014·Granted Jan 5, 2016·0 cites·31 claims
- 2859US2024279839A1Micro inert anode array for die level electrodeposition thickness distribution controlLAM RES CORP·Filed 2022·Application pending·0 cites
- 2958US9793435B2Technique for the growth and fabrication of semipolar (Ga,Al,In,B)N thin films, heterostructures, and devicesUNIV CALIFORNIA·Filed 2015·Granted Oct 17, 2017·0 cites·20 claims
- 3053US2008296626A1Nitride substrates, thin films, heterostructures and devices for enhanced performance, and methods of making the sameHASKELL BENJAMIN·Filed 2008·Application pending·0 cites
- 3153US2024410760A1Thermal imaging for analysis of device fabrication toolsLAM RES CORP·Filed 2022·Application pending·0 cites
- 3252US2013168833A1METHOD FOR ENHANCING GROWTH OF SEMIPOLAR (Al,In,Ga,B)N VIA METALORGANIC CHEMICAL VAPOR DEPOSITIONSATO HITOSHI·Filed 2013·Application pending·0 cites
- 3351US8405128B2Method for enhancing growth of semipolar (Al,In,Ga,B)N via metalorganic chemical vapor depositionSATO HITOSHI·Filed 2010·Granted Mar 26, 2013·0 cites·20 claims
- 3451US2024234112A1Image analysis of plasma conditionsLAM RES CORP·Filed 2022·Application pending·0 cites
- 3548US8450192B2Growth of planar, non-polar, group-III nitride filmsHASKELL BENJAMIN A·Filed 2008·Granted May 28, 2013·0 cites·22 claims
- 3648US7795146B2Etching technique for the fabrication of thin (Al, In, Ga)N layersUNIV CALIFORNIA·Filed 2006·Granted Sep 14, 2010·0 cites·14 claims
- 3748US2011193094A1Growth of planar reduced dislocation density m-plane gallium nitride by hydride vapor phase epitaxyUNIV CALIFORNIA·Filed 2011·Application pending·0 cites
- 3847US2012074524A1Lateral growth method for defect reduction of semipolar nitride filmsBAKER TROY J·Filed 2011·Application pending·0 cites
- 3947US2012074425A1Growth of reduced dislocation density non-polar gallium nitrideHASKELL BENJAMIN A·Filed 2011·Application pending·0 cites
- 4047US2012187454A1Nitride substrates, thin films, heterostructures and devices for enhanced performance, and methods of making the sameHASKELL BENJAMIN·Filed 2011·Application pending·0 cites
- 4146US2014183579A1Miscut semipolar optoelectronic deviceKAEDING JOHN F·Filed 2013·Application pending·0 cites
- 4245US2008083970A1Method and materials for growing III-nitride semiconductor compounds containing aluminumKAMBER DERRICK S·Filed 2007·Application pending·0 cites
- 4345US2011278585A1Growth of reduced dislocation density non-polar gallium nitrideHASKELL BENJAMIN A·Filed 2010·Application pending·0 cites
- 4445US2010320475A1ETCHING TECHNIQUE FOR THE FABRICATION OF THIN (Al, In, Ga)N LAYERSUNIV CALIFORNIA·Filed 2010·Application pending·0 cites
- 4540US2010025727A1Enhanced spontaneous separation method for production of free-standing nitride thin films, substrates, and heterostructuresHASKELL BENJAMIN ALLEN·Filed 2008·Application pending·0 cites
- 4639US10373830B2Apparatus and methods to remove unbonded areas within bonded substrates using localized electromagnetic wave annealingOSTENDO TECHNOLOGIES INC·Filed 2017·Granted Aug 6, 2019·0 cites·20 claims
- 4738US2012161287A1METHOD FOR ENHANCING GROWTH OF SEMI-POLAR (Al,In,Ga,B)N VIA METALORGANIC CHEMICAL VAPOR DEPOSITIONIZA MICHAEL·Filed 2012·Application pending·0 cites
- 4836US2006234486A1Wafer separation technique for the fabrication of free-standing (Al,In,Ga)N wafersSPECK JAMES S·Filed 2006·Application pending·0 cites
- 4932US2012094434A1Enhanced spontaneous separation method for production of free-standing nitride thin films, substrates, and heterostructuresHASKELL BENJAMIN ALLEN·Filed 2011·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →