US2012074524A1PendingUtilityA1

Lateral growth method for defect reduction of semipolar nitride films

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Individually held — no corporate assignee on recordPriority: Jul 13, 2005Filed: Dec 1, 2011Published: Mar 29, 2012
Est. expiryJul 13, 2025(expired)· nominal 20-yr term from priority
Inventors:Troy J. BakerBenjamin A. HaskellJames S. SpeckShuji Nakamura
H10P 14/3256H10P 14/3416H10P 14/3216H10P 14/2921H10P 14/2904H10P 14/2901H10P 14/278H10P 14/276H10P 14/271H10P 14/3466H10P 14/20C30B 29/40C30B 25/02B82Y 40/00
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Claims

Abstract

A lateral growth method for defect reduction of semipolar nitride films. The process steps include selecting a semipolar nitride plane and composition, selecting a suitable substrate for growth of the semipolar nitride plane and composition, and applying a selective growth process in which the semipolar nitride nucleates on some areas of the substrate at the exclusion of other areas of the substrate, wherein the selective growth process includes lateral growth of nitride material by a lateral epitaxial overgrowth (LEO), sidewall lateral epitaxial overgrowth (SLEO), cantilever epitaxy or nanomasking.

Claims

exact text as granted — not AI-modified
1 . A method for growing a semiconductor film, comprising:
 preparing a patterned template or substrate; and   growing a semi-polar III-nitride film laterally from one or more sidewalls of the patterned template or substrate.   
     
     
         2 . The method of  claim 1 , further comprising growing the semi-polar III-nitride film in a window region of the patterned template or substrate. 
     
     
         3 . The method of  claim 2 , further comprising growing the semi-polar III-nitride film laterally in a wing region from the window region. 
     
     
         4 . The method of  claim 3 , wherein a defect density of the semi-polar III-nitride film is reduced in the wing region as compared to the window region. 
     
     
         5 . The method of  claim 1 , wherein a threading dislocation density of the semi-polar III-nitride film is less than 2×10 9  cm −2 . 
     
     
         6 . The method of  claim 1 , wherein a basal plane stacking faults density of the semi-poplar III-nitride film is less than 2×10 5  cm −1 . 
     
     
         7 . The method of  claim 1 , wherein a surface of the semi-polar III-nitride film is a semi-polar plane and the semi-polar plane is a {10-11}, {10-12}, {10-13}, 10-14}, {20-21} or {11-22} plane. 
     
     
         8 . The method of  claim 7 , wherein defects are inclined with respect to the semi-polar plane. 
     
     
         9 . A semiconductor film grown using the method of  claim 1 . 
     
     
         10 . A semiconductor film, comprising:
 a semi-polar III-nitride film laterally grown from one or more sidewalls of a patterned template or substrate.

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