Inventor · disambiguated record
Chung-Yuan Lee
Also filed as: LEE CHUNG Y · LEE CHUNG-YUAN
52 granted patents·18 pending applications·851 citations·filing 1991–2022
98Inventor score
Files withNANYA TECHNOLOGY CORP30UNITED MICROELECTRONICS CORP18INOTERA MEMORIES INC9LEE TZUNG-HAN4CHEN CHIEN-WEI1
Top patents by PatentIndex Score
70 records- 0195US8343829B2Recessed-gate transistor device having a dielectric layer with multi thicknesses and method of making the sameNANYA TECHNOLOGY CORP·Filed 2011·Granted Jan 1, 2013·24 cites·7 claims
- 0295US5576557AComplementary LVTSCR ESD protection circuit for sub-micron CMOS integrated circuitsUNITED MICROELECTRONICS CORP·Filed 1995·Granted Nov 19, 1996·154 cites·14 claims
- 0395US5182220ACMOS on-chip ESD protection circuit and semiconductor structureUNITED MICROELECTRONICS CORP·Filed 1992·Granted Jan 26, 1993·116 cites·14 claims
- 0493US7994559B2Recessed-gate transistor device having a dielectric layer with multi thicknesses and method of making the sameNANYA TECHNOLOGY CORP·Filed 2008·Granted Aug 9, 2011·23 cites·10 claims
- 0589US9455202B2Mask set and method for fabricating semiconductor device by using the sameUNITED MICROELECTRONICS CORP·Filed 2014·Granted Sep 27, 2016·11 cites·19 claims
- 0687US7633109B2DRAM structure and method of making the sameNANYA TECHNOLOGY CORP·Filed 2007·Granted Dec 15, 2009·17 cites·6 claims
- 0787US5473169AComplementary-SCR electrostatic discharge protection circuitUNITED MICROELECTRONICS CORP·Filed 1995·Granted Dec 5, 1995·78 cites·3 claims
- 0886US5698458AMultiple well device and process of manufactureUNITED MICROELECTRONICS CORP·Filed 1996·Granted Dec 16, 1997·67 cites·1 claims
- 0986US5541801ALow-voltage gate trigger SCR (LVGTSCR) ESD protection circuit for input and output padsUNITED MICROELECTRONICS CORP·Filed 1995·Granted Jul 30, 1996·74 cites·29 claims
- 1084US6576530B1Method of fabricating shallow trench isolationNANYA TECHNOLOGY CORP·Filed 2002·Granted Jun 10, 2003·34 cites·10 claims
- 1182US7316978B2Method for forming recessesNANYA TECHNOLOGY CORP·Filed 2005·Granted Jan 8, 2008·8 cites·20 claims
- 1282US5289334ACMOS on-chip ESD protection circuit and semiconductor structureUNITED MICROELECTRONICS CORP·Filed 1992·Granted Feb 22, 1994·44 cites·3 claims
- 1382US5140401ACMOS ESD protection circuit with parasitic SCR structuresUNITED MICROELECTRONICS CORP·Filed 1991·Granted Aug 18, 1992·57 cites·17 claims
- 1481US8343871B2Method for fabricating fine patterns of semiconductor device utilizing self-aligned double patterningINOTERA MEMORIES INC·Filed 2010·Granted Jan 1, 2013·6 cites·16 claims
- 1577US8193648B2Method for detecting errors of exposed positions of a pre-layer and a current layer by an integrated alignment and overlay markLAN YUAN KU·Filed 2010·Granted Jun 5, 2012·5 cites·10 claims
- 1676US7179748B1Method for forming recessesNANYA TECHNOLOGY CORP·Filed 2005·Granted Feb 20, 2007·5 cites·19 claims
- 1774US6977227B2Method of etching bottle trench and fabricating capacitor with sameNANYA TECHNOLOGY CORP·Filed 2004·Granted Dec 20, 2005·18 cites·18 claims
- 1873US7795090B2Electrical device and method for fabricating the sameNANYA TECHNOLOGY CORP·Filed 2008·Granted Sep 14, 2010·3 cites·9 claims
- 1972US7563686B2Method for forming a memory device with a recessed gateNANYA TECHNOLOGY CORP·Filed 2005·Granted Jul 21, 2009·4 cites·5 claims
- 2069US8691705B2Method of patterning metal alloy material layer having hafnium and molybdenumHUANG CHIH-WEI·Filed 2011·Granted Apr 8, 2014·2 cites·5 claims
- 2169US7586152B2Semiconductor structureNANYA TECHNOLOGY CORP·Filed 2007·Granted Sep 8, 2009·3 cites·7 claims
- 2268US7446355B2Electrical device and method for fabricating the sameNANYA TECHNOLOGY CORP·Filed 2006·Granted Nov 4, 2008·2 cites·3 claims
- 2366US9070782B2Semiconductor structureINOTERA MEMORIES INC·Filed 2013·Granted Jun 30, 2015·2 cites·10 claims
- 2466US6767786B1Method for forming bottle trenches by liquid phase oxide depositionNANYA TECHNOLOGY CORP·Filed 2003·Granted Jul 27, 2004·12 cites·13 claims
- 2566US5571737AMetal oxide semiconductor device integral with an electro-static discharge circuitUNITED MICROELECTRONICS CORP·Filed 1994·Granted Nov 5, 1996·22 cites·16 claims
- 2665US8455319B2Vertical transistor for random-access memory and manufacturing method thereofLEE TZUNG HAN·Filed 2011·Granted Jun 4, 2013·2 cites·10 claims
- 2762US6992021B2Method for forming a silicon nitride layerNANYA TECHNOLOGY CORP·Filed 2003·Granted Jan 31, 2006·8 cites·12 claims
- 2860US8309998B2Memory structure having a floating body and method for fabricating the sameLEE TZUNG-HAN·Filed 2011·Granted Nov 13, 2012·1 cites·11 claims
- 2959US11862421B1Trim circuit for e-fuseUNITED MICROELECTRONICS CORP·Filed 2022·Granted Jan 2, 2024·0 cites·8 claims
- 3059US6403483B1Shallow trench isolation having an etching stop layer and method for fabricating sameNANYA TECHNOLOGY CORP·Filed 2000·Granted Jun 11, 2002·9 cites·12 claims
- 3155US10056493B2Semiconductor deviceUNITED MICROELECTRONICS CORP·Filed 2017·Granted Aug 21, 2018·0 cites·9 claims
- 3253US9887293B2Semiconductor deviceUNITED MICROELECTRONICS CORP·Filed 2016·Granted Feb 6, 2018·0 cites·10 claims
- 3353US9000532B2Vertical PMOS field effect transistor and manufacturing method thereofINOTERA MEMORIES INC·Filed 2014·Granted Apr 7, 2015·0 cites·8 claims
- 3452US5858826AMethod of making a blanket N-well structure for SRAM data stability in P-type substratesUNITED MICROELECTRONICS CORP·Filed 1997·Granted Jan 12, 1999·13 cites·11 claims
- 3551US2009146101A1Etchant for metal alloy having hafnium and molybdenumNANYA TECHNOLOGY CORP·Filed 2008·Application pending·0 cites
- 3650US7592233B2Method for forming a memory device with a recessed gateNANYA TECHNOLOGY CORP·Filed 2007·Granted Sep 22, 2009·0 cites·9 claims
- 3747US5985709AProcess for fabricating a triple-well structure for semiconductor integrated circuit devicesUNITED MICROELECTRONICS CORP·Filed 1997·Granted Nov 16, 1999·11 cites·9 claims
- 3846US8772838B2Semiconductor layout structureINOTERA MEMORIES INC·Filed 2013·Granted Jul 8, 2014·0 cites·7 claims
- 3946US8044449B2Memory device with a length-controllable channelNANYA TECHNOLOGY CORP·Filed 2008·Granted Oct 25, 2011·0 cites·4 claims
- 4046US7030431B2Metal gate with composite film stackNANYA TECHNOLOGY CORP·Filed 2004·Granted Apr 18, 2006·2 cites·14 claims
- 4145US12287387B2Method of using NC-MRA to generate pelvic veins images and measure rate of blood flowCHEN CHIEN WEI·Filed 2022·Granted Apr 29, 2025·0 cites·6 claims
- 4245US6818547B2Dual damascene processNANYA TECHNOLOGY CORP·Filed 2002·Granted Nov 16, 2004·4 cites·19 claims
- 4345US2005221560A1Method of forming a vertical memory device with a rectangular trenchNANYA TECHNOLOGY CORP·Filed 2005·Application pending·0 cites
- 4444US9070740B2Memory unit, memory unit array and method of manufacturing the sameINOTERA MEMORIES INC·Filed 2013·Granted Jun 30, 2015·0 cites·10 claims
- 4544US7557012B2Method for forming surface strapNANYA TECHNOLOGY CORP·Filed 2007·Granted Jul 7, 2009·0 cites·3 claims
- 4644US2008315284A1Flash memory structure and method of making the sameHSIAO CHING-NAN·Filed 2007·Application pending·0 cites
- 4743US2015076666A1Semiconductor device having through-silicon viaINOTERA MEMORIES INC·Filed 2013·Application pending·0 cites
- 4842US9935099B2Semiconductor deviceUNITED MICROELECTRONICS CORP·Filed 2015·Granted Apr 3, 2018·0 cites·21 claims
- 4942US2008296725A1Semiconductor component and method for fabricating the sameNANYA TECHNOLOGY CORP·Filed 2007·Application pending·0 cites
- 5042US2008067569A1Memory device with vertical transistor and fabrication method thereofNANYA TECHNOLOGY CORP·Filed 2007·Application pending·0 cites
Showing the top 50 of 70 patent records by PatentIndex Score.
Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →