Inventor · disambiguated record
Shian-Jyh Lin
Also filed as: LIN SHIAN-JYH
55 granted patents·36 pending applications·373 citations·filing 1998–2021
98Inventor score
Top patents by PatentIndex Score
91 records- 0197US11114441B1Semiconductor memory deviceNANYA TECHNOLOGY CORP·Filed 2020·Granted Sep 7, 2021·4 cites·10 claims
- 0294US8202801B1Method of fabricating a semiconductor device with through substrate viaLIN SHIAN-JYH·Filed 2012·Granted Jun 19, 2012·17 cites·9 claims
- 0394US6808979B1Method for forming vertical transistor and trench capacitorNANYA TECHNOLOGY CORP·Filed 2003·Granted Oct 26, 2004·81 cites·19 claims
- 0489US7465622B2Method for making a raised vertical channel transistor deviceNANYA TECHNOLOGY CORP·Filed 2006·Granted Dec 16, 2008·15 cites·11 claims
- 0587US10818592B1Semiconductor memory device including decoupling capacitor array arranged overlying one-time programmable deviceNANYA TECHNOLOGY CORP·Filed 2019·Granted Oct 27, 2020·4 cites·17 claims
- 0687US8143121B2DRAM cell with double-gate fin-FET, DRAM cell array and fabrication method thereofLIN SHIAN-JYH·Filed 2009·Granted Mar 27, 2012·12 cites·27 claims
- 0786US6716757B2Method for forming bottle trenchesNANYA TECHNOLOGY CORP·Filed 2003·Granted Apr 6, 2004·36 cites·15 claims
- 0885US11456303B2Fuse array structureNANYA TECHNOLOGY CORP·Filed 2019·Granted Sep 27, 2022·3 cites·14 claims
- 0983US8148824B2Semiconductor device with through substrate viaLIN SHIAN-JYH·Filed 2010·Granted Apr 3, 2012·6 cites·7 claims
- 1080US7911028B2Semiconductor device and method of manufacturing the sameNANYA TECHNOLOGY CORP·Filed 2008·Granted Mar 22, 2011·9 cites·20 claims
- 1180US7579234B2Method for fabricating memory device with recess channel MOS transistorNANYA TECHNOLOGY CORP·Filed 2007·Granted Aug 25, 2009·6 cites·6 claims
- 1280US7449382B2Memory device and fabrication method thereofNANYA TECHNOLOGY CORP·Filed 2006·Granted Nov 11, 2008·9 cites·40 claims
- 1379US7679137B2Method for fabricating recessed gate MOS transistor deviceNANYA TECHNOLOGY CORP·Filed 2007·Granted Mar 16, 2010·8 cites·3 claims
- 1474US7932555B2Transistor structure and method of making the sameNANYA TECHNOLOGY CORP·Filed 2007·Granted Apr 26, 2011·4 cites·10 claims
- 1574US7592229B2Method for fabricating a recessed-gate MOS transistor deviceNANYA TECHNOLOGY CORP·Filed 2006·Granted Sep 22, 2009·4 cites·7 claims
- 1674US6977227B2Method of etching bottle trench and fabricating capacitor with sameNANYA TECHNOLOGY CORP·Filed 2004·Granted Dec 20, 2005·18 cites·18 claims
- 1773US7795090B2Electrical device and method for fabricating the sameNANYA TECHNOLOGY CORP·Filed 2008·Granted Sep 14, 2010·3 cites·9 claims
- 1873US7078307B2Method for manufacturing single-sided buried strap in semiconductor devicesNANYA TECHNOLOGY CORP·Filed 2004·Granted Jul 18, 2006·15 cites·8 claims
- 1972US6696344B1Method for forming a bottle-shaped trenchNANYA TECHNOLOGY CORP·Filed 2003·Granted Feb 24, 2004·13 cites·15 claims
- 2070US7638391B2Semiconductor memory device and fabrication method thereofNANYA TECHNOLOGY CORP·Filed 2007·Granted Dec 29, 2009·3 cites·18 claims
- 2169US8691705B2Method of patterning metal alloy material layer having hafnium and molybdenumHUANG CHIH-WEI·Filed 2011·Granted Apr 8, 2014·2 cites·5 claims
- 2268US10692811B1Semiconductor structureNANYA TECHNOLOGY CORP·Filed 2018·Granted Jun 23, 2020·1 cites·12 claims
- 2368US7446355B2Electrical device and method for fabricating the sameNANYA TECHNOLOGY CORP·Filed 2006·Granted Nov 4, 2008·2 cites·3 claims
- 2466US6767786B1Method for forming bottle trenches by liquid phase oxide depositionNANYA TECHNOLOGY CORP·Filed 2003·Granted Jul 27, 2004·12 cites·13 claims
- 2565US7160804B2Method of fabricating MOS transistor by millisecond annealNANYA TECHNOLOGY CORP·Filed 2005·Granted Jan 9, 2007·2 cites·23 claims
- 2665US6989561B2Trench capacitor structureNANYA TECHNOLOGY CORP·Filed 2003·Granted Jan 24, 2006·15 cites·22 claims
- 2764US2022085034A1Fuse array structureNANYA TECHNOLOGY CORP·Filed 2021·Application pending·0 cites
- 2862US6992021B2Method for forming a silicon nitride layerNANYA TECHNOLOGY CORP·Filed 2003·Granted Jan 31, 2006·8 cites·12 claims
- 2961US7985998B2Trench-type semiconductor device structureNANYA TECHNOLOGY CORP·Filed 2008·Granted Jul 26, 2011·2 cites·9 claims
- 3060US6417064B1Method for treating the surface of a deep trenchNANYA TECHNOLOGY CORP·Filed 2001·Granted Jul 9, 2002·7 cites·18 claims
- 3159US7943513B2Conductive through connection and forming method thereofNANYA TECHNOLOGY CORP·Filed 2009·Granted May 17, 2011·5 cites·17 claims
- 3259US7510930B2Method for fabricating recessed gate MOS transistor deviceNANYA TECHNOLOGY CORP·Filed 2007·Granted Mar 31, 2009·2 cites·10 claims
- 3358US7803701B2Method for fabricating a semiconductor deviceNANYA TECHNOLOGY CORP·Filed 2007·Granted Sep 28, 2010·2 cites·9 claims
- 3457US7094672B2Method for forming self-aligned contact in semiconductor deviceNANYA TECHNOLOGY CORP·Filed 2004·Granted Aug 22, 2006·8 cites·18 claims
- 3556US10825823B1Semiconductor memory device including decoupling capacitor array arranged overlying one-time programmable deviceNANYA TECHNOLOGY CORP·Filed 2019·Granted Nov 3, 2020·0 cites·14 claims
- 3653US7094658B23-stage method for forming deep trench structure and deep trench capacitorNANYA TECHNOLOGY CORP·Filed 2004·Granted Aug 22, 2006·4 cites·18 claims
- 3753US6566192B2Method of fabricating a trench capacitor of a memory cellNANYA TECHNOLOGY CORP·Filed 2002·Granted May 20, 2003·5 cites·22 claims
- 3852US9214571B2Semiconductor device capable of reducing influences of adjacent word lines or adjacent transistors and fabricating method thereofNANYA TECHNOLOGY CORP·Filed 2015·Granted Dec 15, 2015·0 cites·11 claims
- 3952US7923325B2Deep trench device with single sided connecting structure and fabrication method thereofNANYA TECHNOLOGY CORP·Filed 2009·Granted Apr 12, 2011·0 cites·8 claims
- 4051US9779957B2Method of manufacturing independent depth-controlled shallow trench isolationNANYA TECHNOLOGY CORP·Filed 2014·Granted Oct 3, 2017·0 cites·9 claims
- 4151US7675109B2Raised vertical channel transistor deviceNANYA TECHNOLOGY CORP·Filed 2008·Granted Mar 9, 2010·0 cites·8 claims
- 4251US2009146101A1Etchant for metal alloy having hafnium and molybdenumNANYA TECHNOLOGY CORP·Filed 2008·Application pending·0 cites
- 4349US7619271B2Deep trench device with single sided connecting structure and fabrication method thereofNANYA TECHNOLOGY CORP·Filed 2007·Granted Nov 17, 2009·0 cites·8 claims
- 4449US6821843B1Fabrication method for an array area and a support area of a dynamic random access memoryNANYA TECHNOLOGY CORP·Filed 2004·Granted Nov 23, 2004·6 cites·13 claims
- 4549US2007131998A1Vertical transistor device and fabrication method thereofNANYA TECHNOLOGY CORP·Filed 2007·Application pending·0 cites
- 4649US2013302968A1Memory device and method for manufacturing memory deviceNANYA TECHNOLOGY CORP·Filed 2013·Application pending·0 cites
- 4747US9024377B2Semiconductor device capable of reducing influences of adjacent word lines or adjacent transistors and fabricating method thereofLIN SHIAN-JYH·Filed 2011·Granted May 5, 2015·0 cites·11 claims
- 4847US6620689B2Method of fabricating a flash memory cell using angled implantNANYA TECHNOLOGY CORP·Filed 2002·Granted Sep 16, 2003·3 cites·18 claims
- 4947US5923989AMethod of fabricating rugged capacitor of high density DRAMsNANYA TECHNOLOGY CORP·Filed 1998·Granted Jul 13, 1999·12 cites·33 claims
- 5047US2007096186A1Vertical transistor device and fabrication method thereofNANYA TECHNOLOGY CORP·Filed 2006·Application pending·0 cites
Showing the top 50 of 91 patent records by PatentIndex Score.
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