Inventor · disambiguated record
Katsunori Nishii
Also filed as: NISHII KATSUNORI
25 granted patents·3 pending applications·354 citations·filing 1992–2007
96Inventor score
Top patents by PatentIndex Score
28 records- 0195US6639255B2GaN-based HFET having a surface-leakage reducing cap layerMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 2000·Granted Oct 28, 2003·98 cites·8 claims
- 0282US5872393ARF semiconductor device and a method for manufacturing the sameMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 1996·Granted Feb 16, 1999·71 cites·41 claims
- 0378US6653714B2Lateral bipolar transistorMATSUSHITA ELECTRONICS CORP·Filed 2002·Granted Nov 25, 2003·20 cites·7 claims
- 0475US6737683B2Semiconductor device composed of a group III-V nitride semiconductorMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 2003·Granted May 18, 2004·15 cites·7 claims
- 0575US6531718B2Semiconductor deviceMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 2001·Granted Mar 11, 2003·21 cites·8 claims
- 0672US6774449B1Semiconductor device and method for fabricating the sameMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 2000·Granted Aug 10, 2004·13 cites·6 claims
- 0768US6924516B2Semiconductor deviceMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 2004·Granted Aug 2, 2005·10 cites·8 claims
- 0868US6593193B2Semiconductor device and method for fabricating the sameMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 2002·Granted Jul 15, 2003·12 cites·18 claims
- 0964US6770922B2Semiconductor device composed of a group III-V nitride semiconductorMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 2003·Granted Aug 3, 2004·9 cites·3 claims
- 1062US6933181B2Method for fabricating semiconductor deviceMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 2003·Granted Aug 23, 2005·7 cites·7 claims
- 1159US7585706B2Method of fabricating a semiconductor devicePANASONIC CORP·Filed 2007·Granted Sep 8, 2009·1 cites·16 claims
- 1255US6153499AMethod of manufacturing semiconductor deviceMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 1999·Granted Nov 28, 2000·20 cites·12 claims
- 1355US5370973AMethod of fabricating a fine structure electrodeMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 1992·Granted Dec 6, 1994·25 cites·4 claims
- 1454US6809352B2Palladium silicide (PdSi) schottky electrode for gallium nitride semiconductor devicesMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 2002·Granted Oct 26, 2004·4 cites·3 claims
- 1554US6503808B1Lateral bipolar transistor and method for producing the sameMATSUSHITA ELECTRONICS CORP·Filed 2000·Granted Jan 7, 2003·5 cites·11 claims
- 1651US7449399B2Method for fabricating a semiconductor device for reducing a surface potentialMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 2006·Granted Nov 11, 2008·0 cites·1 claims
- 1751US7122451B2Method for fabricating a semiconductor device including exposing a group III-V semiconductor to an ammonia plasmaMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 2004·Granted Oct 17, 2006·3 cites·2 claims
- 1851US6852612B2Semiconductor device and method for fabricating the sameMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 2002·Granted Feb 8, 2005·3 cites·4 claims
- 1950US6812505B2Semiconductor deviceMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 2003·Granted Nov 2, 2004·3 cites·1 claims
- 2048US2007194295A1Semiconductor device of Group III nitride semiconductor having oxide protective insulating film formed on part of the active regionMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 2007·Application pending·0 cites
- 2146US7105907B2Gallium nitride compound semiconductor device having schottky contactMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 2003·Granted Sep 12, 2006·2 cites·16 claims
- 2243US7307292B2Semiconductor device and method for fabricating the sameMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 2003·Granted Dec 11, 2007·1 cites·10 claims
- 2343US7037817B2Semiconductor device and method for fabricating the sameMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 2004·Granted May 2, 2006·1 cites·9 claims
- 2443US6323538B1Bipolar transistor and method for fabricating the sameMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 2000·Granted Nov 27, 2001·1 cites·4 claims
- 2542US5585655AField-effect transistor and method of manufacturing the sameMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 1995·Granted Dec 17, 1996·8 cites·5 claims
- 2638US2003222276A1Semiconductor device and method for fabricating the sameMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 2003·Application pending·0 cites
- 2737US2002022330A1Bipolar transistor and method for fabricating the sameFiled 2001·Application pending·0 cites
- 2830US5942772ASemiconductor device and method of manufacturing the sameMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 1998·Granted Aug 24, 1999·1 cites·5 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →