Inventor · disambiguated record
Nobumichi Fuchigami
Also filed as: FUCHIGAMI NOBUMICHI
8 granted patents·3 pending applications·17 citations·filing 2009–2014
82Inventor score
Top patents by PatentIndex Score
11 records- 0183US8737036B2Titanium based high-K dielectric filmsINTERMOLECULAR INC·Filed 2012·Granted May 27, 2014·4 cites·16 claims
- 0277US8828821B2Fabrication of semiconductor stacks with ruthenium-based materialsCHEN HANHONG·Filed 2009·Granted Sep 9, 2014·5 cites·14 claims
- 0375US8901708B2Yttrium and titanium high-k dielectric filmsINTERMOLECULAR INC·Filed 2012·Granted Dec 2, 2014·2 cites·13 claims
- 0472US8813325B2Method for fabricating a DRAM capacitorRAMANI KARTHIK·Filed 2011·Granted Aug 26, 2014·3 cites·8 claims
- 0570US8847190B2ALD processing techniques for forming non-volatile resistive switching memoriesINTERMOLECULAR INC·Filed 2013·Granted Sep 30, 2014·1 cites·19 claims
- 0669US8836002B2Method for fabricating a DRAM capacitorINTERMOLECULAR INC·Filed 2013·Granted Sep 16, 2014·2 cites·9 claims
- 0761US8623671B2ALD processing techniques for forming non-volatile resistive switching memoriesINTERMOLECULAR INC·Filed 2013·Granted Jan 7, 2014·0 cites·20 claims
- 0857US9252360B2ALD processing techniques for forming non-volatile resistive switching memoriesINTERMOLECULAR INC·Filed 2014·Granted Feb 2, 2016·0 cites·19 claims
- 0948US2015146341A1ALD dielectric films with leakage-reducing impurity layersGLOBALFOUNDRIES INC·Filed 2013·Application pending·0 cites
- 1044US2016181380A1Semiconductor Device Metal-Insulator-Semiconductor Contacts with Interface Layers and Methods for Forming the SameINTERMOLECULAR INC·Filed 2014·Application pending·0 cites
- 1142US2015170837A1Dielectric K Value Tuning of HAH Stack for Improved TDDB Performance of Logic Decoupling Capacitor or Embedded DRAMINTERMOLECULAR INC·Filed 2013·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →