Inventor · disambiguated record
Kaoru Maekawa
Also filed as: MAEKAWA KAORU
27 granted patents·13 pending applications·238 citations·filing 1979–2022
95Inventor score
Top patents by PatentIndex Score
40 records- 0192US10861744B2Platform and method of operating for integrated end-to-end CMP-less interconnect processTOKYO ELECTRON LTD·Filed 2019·Granted Dec 8, 2020·7 cites·18 claims
- 0290US6776874B2Processing method and apparatus for removing oxide filmTOKYO ELECTRON LTD·Filed 2000·Granted Aug 17, 2004·52 cites·19 claims
- 0389US6706334B1Processing method and apparatus for removing oxide filmTOKYO ELECTRON LTD·Filed 1999·Granted Mar 16, 2004·95 cites·13 claims
- 0487US10886176B2Self-aligned interconnect patterning for back-end-of-line (BEOL) structures including self-aligned via through the underlying interlevel metal layerTOKYO ELECTRON LTD·Filed 2019·Granted Jan 5, 2021·5 cites·20 claims
- 0585US10777456B1Semiconductor back end of line (BEOL) interconnect using multiple materials in a fully self-aligned via (FSAV) processTOKYO ELECTRON LTD·Filed 2019·Granted Sep 15, 2020·6 cites·13 claims
- 0682US10157784B2Integration of a self-forming barrier layer and a ruthenium metal liner in copper metallizationTOKYO ELECTRON LTD·Filed 2017·Granted Dec 18, 2018·4 cites·18 claims
- 0778US10217670B2Wrap-around contact integration schemeTOKYO ELECTRON LTD·Filed 2017·Granted Feb 26, 2019·2 cites·20 claims
- 0875US4317661AElectronic air cleanerMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 1979·Granted Mar 2, 1982·33 cites·10 claims
- 0974US9607888B2Integration of ALD barrier layer and CVD Ru liner for void-free Cu fillingTOKYO ELECTRON LTD·Filed 2015·Granted Mar 28, 2017·2 cites·20 claims
- 1072US10950442B2Methods to reshape spacers for multi-patterning processes using thermal decomposition materialsTOKYO ELECTRON LTD·Filed 2019·Granted Mar 16, 2021·1 cites·17 claims
- 1171US10978300B2Methods to reduce gouging for core removal processes using thermal decomposition materialsTOKYO ELECTRON LTD·Filed 2019·Granted Apr 13, 2021·1 cites·19 claims
- 1270US10861739B2Method of patterning low-k materials using thermal decomposition materialsTOKYO ELECTRON LTD·Filed 2019·Granted Dec 8, 2020·1 cites·20 claims
- 1369US10580691B2Method of integrated circuit fabrication with dual metal power railTOKYO ELECTRON LTD·Filed 2018·Granted Mar 3, 2020·1 cites·19 claims
- 1468US6893954B2Method for patterning a semiconductor waferTOKYO ELECTRON LTD·Filed 2002·Granted May 17, 2005·12 cites·4 claims
- 1567US7902077B2Semiconductor device manufacturing method that recovers damage of the etching target while supplying a predetermined recovery gasTOKYO ELECTRON LTD·Filed 2006·Granted Mar 8, 2011·2 cites·11 claims
- 1665US9245847B2Method for manufacturing semiconductor device for forming metal element-containing layer on insulating layer in which concave portion is formed, semiconductor device including insulating layer in which concave portion is formed, and semiconductor layer on insulating layer in which concave portion is formedTOKYO ELECTRON LTD·Filed 2014·Granted Jan 26, 2016·1 cites·44 claims
- 1756US12438006B2Metal hard mask integrationTOKYO ELECTRON LTD·Filed 2022·Granted Oct 7, 2025·0 cites·20 claims
- 1855US12131914B2Selective etching with fluorine, oxygen and noble gas containing plasmasTOKYO ELECTRON LTD·Filed 2021·Granted Oct 29, 2024·0 cites·20 claims
- 1954US2008233754A1Substrate peripheral film-removing apparatus and substrate peripheral film-removing methodTOKYO ELECTRON LTD·Filed 2008·Application pending·0 cites
- 2054US2015110975A1Method for forming manganese-containing filmTOKYO ELECTRON LTD·Filed 2014·Application pending·0 cites
- 2153US12249515B2Etching method and etching apparatusTOKYO ELECTRON LTD·Filed 2021·Granted Mar 11, 2025·0 cites·16 claims
- 2251US2007141843A1Substrate peripheral film-removing apparatus and substrate peripheral film-removing methodTOKYO ELECTRON LTD·Filed 2006·Application pending·0 cites
- 2349US5373145ACooking apparatus operated by a single operational key that automatically sets a most suitable cooking modeTOSHIBA KK·Filed 1993·Granted Dec 13, 1994·13 cites·10 claims
- 2448US2016326646A1Method for forming manganese-containing filmTOKYO ELECTRON LTD·Filed 2016·Application pending·0 cites
- 2547US11120999B2Plasma etching methodTOKYO ELECTRON LTD·Filed 2018·Granted Sep 14, 2021·0 cites·7 claims
- 2647US10916428B2Method to transfer patterns to a layerTOKYO ELECTRON LTD·Filed 2019·Granted Feb 9, 2021·0 cites·19 claims
- 2747US2008213998A1Method for manufacturing semiconductor device, semiconductor manufacturing apparatus and storage medium for executing the methodTOKYO ELECTRON LTD·Filed 2008·Application pending·0 cites
- 2846US11380579B2Method and process using dual memorization layer for multi-color spacer patterningTOKYO ELECTRON LTD·Filed 2020·Granted Jul 5, 2022·0 cites·18 claims
- 2946US11315789B2Method and structure for low density silicon oxide for fusion bonding and debondingTOKYO ELECTRON LTD·Filed 2019·Granted Apr 26, 2022·0 cites·20 claims
- 3046US2011120650A1Semiconductor device manufacturing method and substrate processing systemTOKYO ELECTRON LTD·Filed 2011·Application pending·0 cites
- 3145US2014374904A1Semiconductor device, semiconductor device manufacturing method, and semiconductor manufacturing apparatusTOKYO ELECTRON LTD·Filed 2014·Application pending·0 cites
- 3244US2008079169A1Manufacturing method for semiconductor device, semiconductor device, substrate processing system, program and memory mediumTOKYO ELECTRON LTD·Filed 2007·Application pending·0 cites
- 3343US10008564B2Method of corner rounding and trimming of nanowires by microwave plasmaTOKYO ELECTRON LTD·Filed 2016·Granted Jun 26, 2018·0 cites·19 claims
- 3443US2019393084A1Method Utilizing Thermal Decomposition Material To Relax Queue Time ControlTOKYO ELECTRON LTD·Filed 2019·Application pending·0 cites
- 3541US2008184543A1Method and apparatus for manufacturing semiconductor device, and storage medium for executing the methodTOKYO ELECTRON LTD·Filed 2008·Application pending·0 cites
- 3640US9121094B2Sputtering method and sputtering apparatusMAEKAWA KAORU·Filed 2008·Granted Sep 1, 2015·0 cites·6 claims
- 3737US2009017621A1Manufacturing method for semiconductor device and manufacturing device of semiconductor deviceTOKYO ELECTRON LTD·Filed 2008·Application pending·0 cites
- 3834US2004065957A1Semiconductor device having a low dielectric film and fabrication process thereofFiled 2001·Application pending·0 cites
- 3933US2015126027A1Method for manufacturing semiconductor deviceTOKYO ELECTRON LTD·Filed 2015·Application pending·0 cites
- 4031US6890848B2Fabrication process of a semiconductor deviceTOKYO ELECTRON LTD·Filed 2001·Granted May 10, 2005·0 cites·25 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →