Semiconductor device manufacturing method and substrate processing system

Abstract

A semiconductor device manufacturing method includes: forming an etching mask having a predetermined circuit pattern on a surface of an etching target film disposed on a semiconductor substrate; etching the etching target film through the etching mask to form a groove or hole in the etching target film; removing the etching mask by a process including at least a process using an ozone-containing gas; and recovering damage of the etching target film caused before or in said removing the etching mask, while supplying a predetermined recovery gas.

1 . A substrate processing system for processing a target object prepared by forming an etching mask having a predetermined circuit pattern on a surface of an etching target film disposed on a semiconductor substrate, and then etching the etching target film through the etching mask to form a groove or hole in the etching target film, the system comprising:
 a denaturing apparatus that denatures the etching mask, by use of a process gas containing ozone and water vapor, to be soluble in a predetermined liquid containing purified water or a chemical solution;   a cleaning apparatus that dissolves and removes the etching mask thus denatured by use of the predetermined liquid;   a recovering apparatus that recovers damage of the etching target film by use of a predetermined recovery gas; and   a control section that controls an operation of the system, the control section including a computer readable non-transitory storage medium that stores a control program, which, when executed, controls the system to conduct a sequence including   removing the etching mask by denaturing the etching mask by use of the process gas in the denaturing apparatus, and then dissolving the etching mask thus denatured by use of the predetermined liquid in the cleaning apparatus, and   then recovering damage of the etching target film, caused before or in said removing the etching mask, by use of the predetermined recovery gas in the recovering apparatus,   wherein said recovering damage includes heating the semiconductor substrate at a first temperature without supplying a silylation gas onto the semiconductor substrate to remove moisture remaining on the semiconductor substrate, and then supplying the silylation gas as the recovery gas onto the semiconductor substrate to recover the damage by a silylation process.   
     
     
         2 . The system according to  claim 1 , wherein the denaturing apparatus, the cleaning apparatus, and the recovering apparatus are arranged in the same unit. 
     
     
         3 . The system according to  claim 1 , wherein said recovering damage includes heating the semiconductor substrate at a second temperature higher than the first temperature along with said supplying the silylation gas to recover the damage by the silylation process. 
     
     
         4 . The system according to  claim 3 , wherein the second temperature falls within a range of 50 to 150° C. 
     
     
         5 . The system according to  claim 1 , wherein the sequence further includes cleaning the semiconductor substrate after said removing the etching mask and before said recovering damage. 
     
     
         6 . The system according to  claim 1 , wherein the silylation gas contains a compound including silazane bonds (Si—N) in molecules. 
     
     
         7 . The system according to  claim 6 , wherein the compound is selected from the group consisting of TMDS (1,1,3,3-Tetramethyldisilazane), TMSDMA (Dimethylaminotrimethylsilane), DMSDMA (Dimethylsilyldimethylamine), TMSPyrole (1-Trimethylsilylpyrole), BSTFA (N,O-Bis(trimethylsilyl)trifluoroacetamide), and BDMADMS (Bis(dimethylamino)dimethylsilane). 
     
     
         8 . A computer readable non-transitory storage medium that stores a control program to control a substrate processing system for processing a target object prepared by forming an etching mask having a predetermined circuit pattern on a surface of an etching target film disposed on a semiconductor substrate, and then etching the etching target film through the etching mask to form a groove or hole in the etching target film, the system including a denaturing apparatus that denatures the etching mask, by use of a process gas containing ozone and water vapor, to be soluble in a predetermined liquid containing purified water or a chemical solution, a cleaning apparatus that dissolves and removes the etching mask thus denatured by use of the predetermined liquid, and a recovering apparatus that recovers damage of the etching target film by use of a predetermined recovery gas,
 the control program, when executed, controlling the system to conduct a sequence including   removing the etching mask by denaturing the etching mask by use of the process gas in the denaturing apparatus, and then dissolving the etching mask thus denatured by use of the predetermined liquid in the cleaning apparatus, and   then recovering damage of the etching target film, caused before or in said removing the etching mask, by use of the predetermined recovery gas in the recovering apparatus,   wherein said recovering damage includes heating the semiconductor substrate at a first temperature without supplying a silylation gas onto the semiconductor substrate to remove moisture remaining on the semiconductor substrate, and then supplying the silylation gas as the recovery gas onto the semiconductor substrate to recover the damage by a silylation process.   
     
     
         9 . The storage medium according to  claim 8 , wherein said recovering damage includes heating the semiconductor substrate at a second temperature higher than the first temperature along with said supplying the silylation gas to recover the damage by the silylation process. 
     
     
         10 . The storage medium according to  claim 9 , wherein the second temperature falls within a range of 50 to 150° C. 
     
     
         11 . The storage medium according to  claim 8 , wherein the sequence further includes cleaning the semiconductor substrate after said removing the etching mask and before said recovering damage. 
     
     
         12 . The storage medium according to  claim 8 , wherein the silylation gas contains a compound including silazane bonds (Si—N) in molecules. 
     
     
         13 . The storage medium according to  claim 12 , wherein the compound is selected from the group consisting of TMDS (1,1,3,3-Tetramethyldisilazane), TMSDMA (Dimethylaminotrimethylsilane), DMSDMA (Dimethylsilyldimethylamine), TMSPyrole (1-Trimethylsilylpyrole), BSTFA (N,O-Bis(trimethylsilyl)trifluoroacetamide), and BDMADMS (Bis(dimethylamino)dimethylsilane).