Inventor · disambiguated record
Jei-Hwan Yoo
Also filed as: YOO JEI-HWAN
36 granted patents·1 pending application·920 citations·filing 1995–2004
98Inventor score
Files withSAMSUNG ELECTRONICS CO LTD37
Top patents by PatentIndex Score
37 records- 0195US5761146AData in/out channel control circuit of semiconductor memory device having multi-bank structureSAMSUNG ELECTRONICS CO LTD·Filed 1996·Granted Jun 2, 1998·145 cites·12 claims
- 0294US6560158B2Power down voltage control method and apparatusSAMSUNG ELECTRONICS CO LTD·Filed 2001·Granted May 6, 2003·101 cites·30 claims
- 0392US6937087B2Temperature sensor and method for detecting trip temperature of a temperature sensorSAMSUNG ELECTRONICS CO LTD·Filed 2004·Granted Aug 30, 2005·55 cites·10 claims
- 0492US6545923B2Negatively biased word line scheme for a semiconductor memory deviceSAMSUNG ELECTRONICS CO LTD·Filed 2001·Granted Apr 8, 2003·64 cites·70 claims
- 0587US6510096B2Power down voltage control method and apparatusSAMSUNG ELECTRONICS CO LTD·Filed 2001·Granted Jan 21, 2003·44 cites·28 claims
- 0687US5617366AMethod and apparatus for a test control circuit of a semiconductor memory deviceSAMSUNG ELECTRONICS CO LTD·Filed 1995·Granted Apr 1, 1997·69 cites·8 claims
- 0784US7106127B2Temperature sensor and method for detecting trip temperature of a temperature sensorSAMSUNG ELECTRONICS CO LTD·Filed 2003·Granted Sep 12, 2006·30 cites·8 claims
- 0880US6456555B2Voltage detecting circuit for semiconductor memory deviceSAMSUNG ELECTRONICS CO LTD·Filed 2000·Granted Sep 24, 2002·28 cites·31 claims
- 0974US5638331ABurn-in test circuit and method in semiconductor memory deviceSAMSUNG ELECTRONICS CO LTD·Filed 1995·Granted Jun 10, 1997·44 cites·27 claims
- 1071US5907514ACircuit and method for controlling a redundant memory cell in an integrated memory circuitSAMSUNG ELECTRONICS CO LTD·Filed 1998·Granted May 25, 1999·31 cites·11 claims
- 1170US5940343AMemory sub-word line driver operated by unboosted voltageSAMSUNG ELECTRONICS CO LTD·Filed 1997·Granted Aug 17, 1999·30 cites·15 claims
- 1267US7023262B2Negative voltage generator for a semiconductor memory deviceSAMSUNG ELECTRONICS CO LTD·Filed 2004·Granted Apr 4, 2006·17 cites·1 claims
- 1367US6490222B2Decoding circuit for controlling activation of wordlines in a semiconductor memory deviceSAMSUNG ELECTRONICS CO LTD·Filed 2001·Granted Dec 3, 2002·15 cites·13 claims
- 1467US5751642AVoltage control circuit for input and output lines of semiconductor memory deviceSAMSUNG ELECTRONICS CO LTD·Filed 1996·Granted May 12, 1998·26 cites·11 claims
- 1566US6424578B2Voltage detecting circuit for semiconductor memory deviceSAMSUNG ELECTRONICS CO LTD·Filed 2000·Granted Jul 23, 2002·15 cites·20 claims
- 1666US5970002ASemiconductor memory device having redundancy functionSAMSUNG ELECTRONICS CO LTD·Filed 1998·Granted Oct 19, 1999·25 cites·7 claims
- 1764US5856952AIntegrated circuit memory devices including a plurality of row latch circuits and related methodsSAMSUNG ELECTRONICS CO LTD·Filed 1998·Granted Jan 5, 1999·20 cites·5 claims
- 1863US5928373AHigh speed test circuit for a semiconductor memory deviceSAMSUNG ELECTRONICS CO LTD·Filed 1996·Granted Jul 27, 1999·22 cites·16 claims
- 1960US6335897B1Semiconductor memory device including redundancy circuit adopting latch cellSAMSUNG ELECTRONICS CO LTD·Filed 2000·Granted Jan 1, 2002·11 cites·18 claims
- 2059US5798978ASemiconductor memory device with multibank structureSAMSUNG ELECTRONICS CO LTD·Filed 1996·Granted Aug 25, 1998·17 cites·8 claims
- 2156US5715209AIntegrated circuit memory devices including a dual transistor column selection switch and related methodsSAMSUNG ELECTRONICS CO LTD·Filed 1996·Granted Feb 3, 1998·17 cites·8 claims
- 2255US6829189B2Semiconductor memory device and bit line sensing method thereofSAMSUNG ELECTRONICS CO LTD·Filed 2002·Granted Dec 7, 2004·9 cites·17 claims
- 2353US5650977AIntegrated circuit memory device including banks of memory cells and related methodsSAMSUNG ELECTRONICS CO LTD·Filed 1996·Granted Jul 22, 1997·14 cites·21 claims
- 2452US6064601AIntegrated circuit memory devices and controlling methods that simultaneously activate multiple column select lines during a write cycle of a parallel bit test modeSAMSUNG ELECTRONICS CO LTD·Filed 1998·Granted May 16, 2000·13 cites·15 claims
- 2549US6845049B2Semiconductor memory device including a delaying circuit capable of generating a delayed signal with a substantially constant delay timeSAMSUNG ELECTRONICS CO LTD·Filed 2002·Granted Jan 18, 2005·6 cites·6 claims
- 2649US6400620B1Semiconductor memory device with burn-in test functionSAMSUNG ELECTRONICS CO LTD·Filed 2001·Granted Jun 4, 2002·6 cites·7 claims
- 2748US7336121B2Negative voltage generator for a semiconductor memory deviceSAMSUNG ELECTRONICS CO LTD·Filed 2001·Granted Feb 26, 2008·5 cites·11 claims
- 2845US5715210ALow power semiconductor memory deviceSAMSUNG ELECTRONICS CO LTD·Filed 1996·Granted Feb 3, 1998·10 cites·20 claims
- 2943US6151264AIntegrated circuit memory devices including a single data shift block between first and second memory banksSAMSUNG ELECTRONICS CO LTD·Filed 1999·Granted Nov 21, 2000·8 cites·20 claims
- 3042US6590237B2Layout structure for dynamic random access memorySAMSUNG ELECTRONICS CO LTD·Filed 2001·Granted Jul 8, 2003·3 cites·18 claims
- 3142US5657265ASemiconductor memory device having circuit array structure for fast operationSAMSUNG ELECTRONICS CO LTD·Filed 1996·Granted Aug 12, 1997·8 cites·11 claims
- 3240US6927488B2Semiconductor memory deviceSAMSUNG ELECTRONICS CO LTD·Filed 2003·Granted Aug 9, 2005·2 cites·15 claims
- 3336US6178109B1Integrated circuit memory devices having reduced susceptibility to reference voltage signal noiseSAMSUNG ELECTRONICS CO LTD·Filed 1999·Granted Jan 23, 2001·4 cites·26 claims
- 3435US6252808B1Semiconductor memory device having improved row redundancy scheme and method for curing defective cellSAMSUNG ELECTRONICS CO LTD·Filed 1997·Granted Jun 26, 2001·4 cites·14 claims
- 3535US2003197546A1Negative voltage generator for a semiconductor memory deviceSAMSUNG ELECTRONICS CO LTD·Filed 2003·Application pending·0 cites
- 3631US6252263B1Layout structure for dynamic random access memorySAMSUNG ELECTRONICS CO LTD·Filed 1998·Granted Jun 26, 2001·1 cites·10 claims
- 3731US5784322AStandby current detecting circuit for use in a semiconductor memory device and method thereofSAMSUNG ELECTRONICS CO LTD·Filed 1996·Granted Jul 21, 1998·1 cites·22 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →