Inventor · disambiguated record
Matthias Lehr
Also filed as: LEHR MATTHIAS · LEHR MATTHIAS U · LEHR MATTHIAS UWE
68 granted patents·20 pending applications·1,015 citations·filing 1992–2021
99Inventor score
Files withLEHR MATTHIAS17ADVANCED MICRO DEVICES INC15INFINEON TECHNOLOGIES AG11GLOBALFOUNDRIES INC10GRILLBERGER MICHAEL6
Top patents by PatentIndex Score
88 records- 0197US7550396B2Method for reducing resist poisoning during patterning of silicon nitride layers in a semiconductor deviceADVANCED MICRO DEVICES INC·Filed 2007·Granted Jun 23, 2009·507 cites·22 claims
- 0296US8924565B2Transport of customer flexibility changes in a multi-tenant environmentLEHR MATTHIAS·Filed 2013·Granted Dec 30, 2014·60 cites·20 claims
- 0396US8392573B2Transport of customer flexibility changes in a multi-tenant environmentLEHR MATTHIAS·Filed 2010·Granted Mar 5, 2013·72 cites·20 claims
- 0490US9244697B2Stable anchors in user interface to support life cycle extensionsSCHLARB UWE·Filed 2010·Granted Jan 26, 2016·16 cites·19 claims
- 0590US8489640B2Field extensibility using generic boxed componentsSCHLARB UWE·Filed 2010·Granted Jul 16, 2013·24 cites·18 claims
- 0688US7491555B2Method and semiconductor structure for monitoring the fabrication of interconnect structures and contacts in a semiconductor deviceADVANCED MICRO DEVICES INC·Filed 2006·Granted Feb 17, 2009·17 cites·19 claims
- 0787US8819075B2Facilitation of extension field usage based on reference field usageSCHLARB UWE·Filed 2010·Granted Aug 26, 2014·15 cites·17 claims
- 0886US8329577B2Method of forming an alloy in an interconnect structure to increase electromigration resistanceLEHR MATTHIAS·Filed 2011·Granted Dec 11, 2012·8 cites·9 claims
- 0986US7867917B2Etch stop layer for a metallization layer with enhanced adhesion, etch selectivity and hermeticityADVANCED MICRO DEVICES INC·Filed 2006·Granted Jan 11, 2011·11 cites·16 claims
- 1085US8863005B2Propagating business object extension fields from source to targetLEHR MATTHIAS·Filed 2009·Granted Oct 14, 2014·16 cites·16 claims
- 1182US7838359B2Technique for forming contact insulation layers and silicide regions with different characteristicsADVANCED MICRO DEVICES INC·Filed 2006·Granted Nov 23, 2010·10 cites·13 claims
- 1281US8053354B2Reduced wafer warpage in semiconductors by stress engineering in the metallization systemGLOBALFOUNDRIES INC·Filed 2009·Granted Nov 8, 2011·7 cites·16 claims
- 1381US8043956B2Wire bonding on reactive metal surfaces of a metallization of a semiconductor device by providing a protective layerGLOBALFOUNDRIES INC·Filed 2009·Granted Oct 25, 2011·8 cites·12 claims
- 1481US7375032B2Semiconductor substrate thinning method for manufacturing thinned dieADVANCED MICRO DEVICES INC·Filed 2005·Granted May 20, 2008·11 cites·22 claims
- 1579US9054112B2Semiconductor device comprising a die seal having an integrated alignment markLEHR MATTHIAS·Filed 2012·Granted Jun 9, 2015·5 cites·17 claims
- 1679US7416992B2Method of patterning a low-k dielectric using a hard maskADVANCED MICRO DEVICES INC·Filed 2005·Granted Aug 26, 2008·7 cites·20 claims
- 1778US7982313B2Semiconductor device including stress relaxation gaps for enhancing chip package interaction stabilityADVANCED MICRO DEVICES INC·Filed 2009·Granted Jul 19, 2011·8 cites·21 claims
- 1878US5260451ASubstituted pyrrole compounds and use thereof in pharmaceutical compositionsMERCKLE GMBH·Filed 1992·Granted Nov 9, 1993·24 cites·8 claims
- 1976US8479578B2Assessing metal stack integrity in sophisticated semiconductor devices by mechanically stressing die contactsGEISLER HOLM·Filed 2010·Granted Jul 9, 2013·6 cites·28 claims
- 2076US7592258B2Metallization layer of a semiconductor device having differently thick metal lines and a method of forming the sameADVANCED MICRO DEVICES INC·Filed 2007·Granted Sep 22, 2009·7 cites·16 claims
- 2174US8039958B2Semiconductor device including a reduced stress configuration for metal pillarsADVANCED MICRO DEVICES INC·Filed 2009·Granted Oct 18, 2011·6 cites·16 claims
- 2274US7678699B2Method of forming an insulating capping layer for a copper metallization layer by using a silane reactionADVANCED MICRO DEVICES INC·Filed 2006·Granted Mar 16, 2010·6 cites·19 claims
- 2373US7829889B2Method and semiconductor structure for monitoring etch characteristics during fabrication of vias of interconnect structuresADVANCED MICRO DEVICES INC·Filed 2007·Granted Nov 9, 2010·3 cites·19 claims
- 2473US7306976B2Technique for enhancing thermal and mechanical characteristics of an underfill material of a substrate/die assemblyADVANCED MICRO DEVICES INC·Filed 2005·Granted Dec 11, 2007·5 cites·18 claims
- 2572US9136234B2Semiconductor device with improved metal pillar configurationGLOBALFOUNDRIES INC·Filed 2013·Granted Sep 15, 2015·3 cites·22 claims
- 2672US7713815B2Semiconductor device including a vertical decoupling capacitorGLOBALFOUNDRIES INC·Filed 2006·Granted May 11, 2010·5 cites·9 claims
- 2770US6737748B2Stacked via with specially designed landing pad for integrated semiconductor structuresINFINEON TECHNOLOGIES AG·Filed 2002·Granted May 18, 2004·19 cites·18 claims
- 2870US6310217B1Acylpyrroledicarboxylic acids and acylindoledicarboxylic acids and their derivatives as inhibitors of cytosolic phospholipase A2MERCKLE GMBH·Filed 1999·Granted Oct 30, 2001·28 cites·15 claims
- 2969US6458631B1Method for fabricating an integrated circuit, in particular an antifuseINFINEON TECHNOLOGIES AG·Filed 2002·Granted Oct 1, 2002·17 cites·6 claims
- 3066US8482123B2Stress reduction in chip packaging by using a low-temperature chip-package connection regimeGRILLBERGER MICHAEL·Filed 2011·Granted Jul 9, 2013·2 cites·23 claims
- 3166US8450206B2Method of forming a semiconductor device including a stress buffer material formed above a low-k metallization systemWALTER AXEL·Filed 2010·Granted May 28, 2013·3 cites·17 claims
- 3266US8114688B2Method and semiconductor structure for monitoring etch characteristics during fabrication of vias of interconnect structuresLEHR MATTHIAS·Filed 2010·Granted Feb 14, 2012·1 cites·17 claims
- 3366US7829357B2Method and test structure for monitoring CMP processes in metallization layers of semiconductor devicesGLOBALFOUNDRIES INC·Filed 2008·Granted Nov 9, 2010·2 cites·17 claims
- 3466US7569937B2Technique for forming a copper-based contact layer without a terminal metalADVANCED MICRO DEVICES INC·Filed 2006·Granted Aug 4, 2009·3 cites·6 claims
- 3566US7476626B2Etch stop layer for a metallization layer with enhanced etch selectivity and hermeticityADVANCED MICRO DEVICES INC·Filed 2006·Granted Jan 13, 2009·2 cites·14 claims
- 3664US10768946B2Edge configuration of software systems for manufacturingSAP SE·Filed 2018·Granted Sep 8, 2020·1 cites·20 claims
- 3764US8404577B2Semiconductor device having a grain orientation layerBOEMMELS JUERGEN·Filed 2008·Granted Mar 26, 2013·3 cites·10 claims
- 3864US8283247B2Semiconductor device including a die region designed for aluminum-free solder bump connection and a test structure designed for aluminum-free wire bondingLEHR MATTHIAS·Filed 2008·Granted Oct 9, 2012·4 cites·18 claims
- 3964US6429503B2Connection element in an integrated circuit having a layer structure disposed between two conductive structuresINFINEON TECHNOLOGIES AG·Filed 2001·Granted Aug 6, 2002·13 cites·8 claims
- 4063US7491638B2Method of forming an insulating capping layer for a copper metallization layerADVANCED MICRO DEVICES INC·Filed 2006·Granted Feb 17, 2009·1 cites·17 claims
- 4162US6635567B2Method of producing alignment marksINFINEON TECHNOLOGIES AG·Filed 2001·Granted Oct 21, 2003·19 cites·17 claims
- 4261US9324631B2Semiconductor device including a stress buffer material formed above a low-k metallization systemGLOBALFOUNDRIES INC·Filed 2013·Granted Apr 26, 2016·1 cites·22 claims
- 4359US8920027B2Assessing thermal mechanical characteristics of complex semiconductor devices by integrated heating systemsGRILLBERGER MICHAEL·Filed 2011·Granted Dec 30, 2014·1 cites·15 claims
- 4458US8062982B2High yield plasma etch process for interlayer dielectricsFISCHER DANIEL·Filed 2007·Granted Nov 22, 2011·1 cites·15 claims
- 4558US8039400B2Reducing contamination of semiconductor substrates during BEOL processing by performing a deposition/etch cycle during barrier depositionGLOBALFOUNDRIES INC·Filed 2009·Granted Oct 18, 2011·1 cites·25 claims
- 4657US10607947B2Semiconductor device comprising a die seal including long via linesGLOBALFOUNDRIES INC·Filed 2018·Granted Mar 31, 2020·0 cites·16 claims
- 4757US6803612B2Integrated circuit having electrical connecting elementsINFINEON TECHNOLOGIES AG·Filed 2003·Granted Oct 12, 2004·9 cites·11 claims
- 4855US11590947B2Method for controlling a hydrodynamic machine and hydrodynamic machineVOITH PATENT GMBH·Filed 2021·Granted Feb 28, 2023·0 cites·9 claims
- 4955US8501545B2Reduction of mechanical stress in metal stacks of sophisticated semiconductor devices during die-substrate soldering by an enhanced cool down regimeGRILLBERGER MICHAEL·Filed 2010·Granted Aug 6, 2013·1 cites·21 claims
- 5053US9524239B2Self service propagation of custom extension fields into web servicesWILHELM GEORG·Filed 2013·Granted Dec 20, 2016·1 cites·14 claims
Showing the top 50 of 88 patent records by PatentIndex Score.
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