Inventor · disambiguated record
Mitsuhiro Horikawa
Also filed as: HORIKAWA MITSUHIRO
17 granted patents·6 pending applications·210 citations·filing 1989–2025
94Inventor score
Top patents by PatentIndex Score
23 records- 0192US8969169B1DRAM MIM capacitor using non-noble electrodesINTERMOLECULAR INC·Filed 2013·Granted Mar 3, 2015·13 cites·20 claims
- 0291US9281357B2DRAM MIM capacitor using non-noble electrodesINTERMOLECULAR INC·Filed 2015·Granted Mar 8, 2016·7 cites·19 claims
- 0385US8546236B2High performance dielectric stack for DRAM capacitorINTERMOLECULAR INC·Filed 2013·Granted Oct 1, 2013·5 cites·19 claims
- 0483US8415227B2High performance dielectric stack for DRAM capacitorMALHOTRA SANDRA·Filed 2011·Granted Apr 9, 2013·5 cites·10 claims
- 0582US5062095AActuator and method of manufacturing thereofSEIKO EPSON CORP·Filed 1989·Granted Oct 29, 1991·45 cites·24 claims
- 0679US8815695B2Methods to improve leakage for ZrO2 based high K MIM capacitorINTERMOLECULAR INC·Filed 2012·Granted Aug 26, 2014·4 cites·19 claims
- 0779US8476141B2High performance dielectric stack for DRAM capacitorINTERMOLECULAR INC·Filed 2013·Granted Jul 2, 2013·3 cites·9 claims
- 0878US8541283B2High performance dielectric stack for DRAM capacitorINTERMOLECULAR INC·Filed 2013·Granted Sep 24, 2013·3 cites·20 claims
- 0976US5973386ASemiconductor substrate having silicon oxide layers formed between polysilicon layersNEC CORP·Filed 1997·Granted Oct 26, 1999·43 cites·7 claims
- 1073US6372611B1Semiconductor manufacturing method including gettering of metal impuritiesNEC CORP·Filed 1998·Granted Apr 16, 2002·43 cites·25 claims
- 1171US8748325B2Method of manufacturing semiconductor deviceELPIDA MEMORY INC·Filed 2013·Granted Jun 10, 2014·4 cites·15 claims
- 1266US8026184B2Semiconductor device and method of manufacturing the sameELPIDA MEMORY INC·Filed 2007·Granted Sep 27, 2011·3 cites·8 claims
- 1361US2025298274A1Electro-optical device and electronic apparatusSEIKO EPSON CORP·Filed 2025·Application pending·0 cites
- 1457US7790613B2Semiconductor device and method of manufacturing the sameELPIDA MEMORY INC·Filed 2008·Granted Sep 7, 2010·1 cites·8 claims
- 1550US7224016B2Memory with memory cells that include a MIM type capacitor with a lower electrode made for reduced resistance at an interface with a metal filmHITACHI LTD·Filed 2004·Granted May 29, 2007·3 cites·12 claims
- 1649US6300680B1Semiconductor substrate and manufacturing method thereofNEC CORP·Filed 1998·Granted Oct 9, 2001·14 cites·19 claims
- 1748US2014183696A1Methods to Improve Leakage for ZrO2 Based High K MIM CapacitorINTERMOLECULAR INC·Filed 2013·Application pending·0 cites
- 1848US2007148896A1Memory with memory cells that include a mim type capacitor with a lower electrode made for reduced resistance at an interface with a metal filmHITACHI LTD·Filed 2006·Application pending·0 cites
- 1948US2009230510A1Semiconductor storage device and method of manufacturing the sameELPIDA MEMORY INC·Filed 2009·Application pending·0 cites
- 2044US2007155115A1Semiconductor device having capacitor large in capacitance and high in reliability and method of manufacturing the sameELPIDA MEMORY INC·Filed 2006·Application pending·0 cites
- 2143US2009152677A1Semiconductor device and method for manufacturing semiconductor deviceELPIDA MEMORY INC·Filed 2008·Application pending·0 cites
- 2240US6046095ASemiconductor substrate having polysilicon layers and fabrication process of semiconductor device using the sameNEC CORP·Filed 1999·Granted Apr 4, 2000·7 cites·9 claims
- 2339US6562733B2Semiconductor device manufacturing methodNEC CORP·Filed 1998·Granted May 13, 2003·7 cites·12 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →