Inventor · disambiguated record
Yukihiro Sakotsubo
Also filed as: SAKOTSUBO YUKIHIRO
12 granted patents·4 pending applications·80 citations·filing 2010–2024
89Inventor score
Top patents by PatentIndex Score
16 records- 0196US11355437B2Three-dimensional memory device including bump-containing bit lines and methods for manufacturing the sameSANDISK TECHNOLOGIES LLC·Filed 2020·Granted Jun 7, 2022·5 cites·7 claims
- 0295US10892279B1NAND string containing separate hole and electron tunneling dielectric layers and methods for forming the sameSANDISK TECHNOLOGIES LLC·Filed 2019·Granted Jan 12, 2021·16 cites·20 claims
- 0395US9437658B2Fully isolated selector for memory deviceSANDISK 3D LLC·Filed 2014·Granted Sep 6, 2016·21 cites·15 claims
- 0489US11903190B2Three-dimensional memory device with plural channels per memory opening and methods of making the sameSANDISK TECHNOLOGIES LLC·Filed 2020·Granted Feb 13, 2024·2 cites·5 claims
- 0589US8766233B2Semiconductor device with variable resistance element and method for manufacturing the sameSAKOTSUBO YUKIHIRO·Filed 2010·Granted Jul 1, 2014·16 cites·8 claims
- 0688US9812505B2Non-volatile memory device containing oxygen-scavenging material portions and method of making thereofSANDISK TECHNOLOGIES LLC·Filed 2016·Granted Nov 7, 2017·7 cites·10 claims
- 0784US10453861B1Ferroelectric non-volatile memorySANDISK TECHNOLOGIES LLC·Filed 2018·Granted Oct 22, 2019·3 cites·8 claims
- 0878US8598564B2Nonvolatile semiconductor memory device and manufacturing method thereofSAKOTSUBO YUKIHIRO·Filed 2012·Granted Dec 3, 2013·7 cites·11 claims
- 0975US10734408B2Ferroelectric non-volatile memorySANDISK TECHNOLOGIES LLC·Filed 2019·Granted Aug 4, 2020·1 cites·13 claims
- 1070US10461095B2Ferroelectric non-volatile memorySANDISK TECHNOLOGIES LLC·Filed 2018·Granted Oct 29, 2019·1 cites·10 claims
- 1164US2025301643A1Memory device including a core-side charge trapping material layer and methods for forming the sameSANDISK TECHNOLOGIES LLC·Filed 2024·Application pending·0 cites
- 1262US2025301654A1Memory device including a core-side charge trapping material layer and methods for forming the sameSANDISK TECHNOLOGIES LLC·Filed 2024·Application pending·0 cites
- 1361US10453862B1Ferroelectric non-volatile memorySANDISK TECHNOLOGIES LLC·Filed 2018·Granted Oct 22, 2019·1 cites·7 claims
- 1459US2025359050A1Memory device including contoured drain-select-level isolation structures and methods for forming the sameSANDISK TECHNOLOGIES LLC·Filed 2024·Application pending·0 cites
- 1558US2025301642A1Memory device including a core-side charge trapping material layer and methods for forming the sameSANDISK TECHNOLOGIES LLC·Filed 2024·Application pending·0 cites
- 1647US8710478B2Nonvolatile semiconductor storage device and a manufacturing method thereofSAKOTSUBO YUKIHIRO·Filed 2012·Granted Apr 29, 2014·0 cites·10 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →