Inventor · disambiguated record
Adam M. Pyzyna
Also filed as: PYZYNA ADAM M
16 granted patents·3 pending applications·94 citations·filing 2011–2024
91Inventor score
Top patents by PatentIndex Score
19 records- 0197US9721888B2Trench silicide with self-aligned contact viasIBM·Filed 2015·Granted Aug 1, 2017·21 cites·15 claims
- 0297US9306164B1Electrode pair fabrication using directed self assembly of diblock copolymersIBM·Filed 2015·Granted Apr 5, 2016·22 cites·8 claims
- 0395US9437443B2Low-temperature sidewall image transfer process using ALD metals, metal oxides and metal nitridesGLOBALFOUNDRIES INC·Filed 2013·Granted Sep 6, 2016·26 cites·19 claims
- 0493US9653679B1Magnetoresistive structures with stressed layerIBM·Filed 2016·Granted May 16, 2017·8 cites·18 claims
- 0591US9601686B1Magnetoresistive structures with stressed layerIBM·Filed 2015·Granted Mar 21, 2017·7 cites·4 claims
- 0690US9716036B2Electronic device including moat power metallization in trenchGLOBALFOUNDRIES INC·Filed 2015·Granted Jul 25, 2017·6 cites·16 claims
- 0774US10600656B2Directed self-assembly for copper patterningIBM·Filed 2017·Granted Mar 24, 2020·2 cites·10 claims
- 0871US10168299B2Reproducible and manufacturable nanogaps for embedded transverse electrode pairs in nanochannelsIBM·Filed 2016·Granted Jan 1, 2019·1 cites·17 claims
- 0967US9349640B1Electrode pair fabrication using directed self assembly of diblock copolymersIBM·Filed 2015·Granted May 24, 2016·1 cites·12 claims
- 1064US2025259766A1Superconducting device with multiple wiringIBM·Filed 2024·Application pending·0 cites
- 1158US11221310B2Reproducible and manufacturable nanogaps for embedded transverse electrode pairs in nanochannelsIBM·Filed 2018·Granted Jan 11, 2022·0 cites·18 claims
- 1257US11737373B2Silicide passivation of niobiumIBM·Filed 2020·Granted Aug 22, 2023·0 cites·8 claims
- 1357US10068850B2Trench silicide with self-aligned contact viasIBM·Filed 2017·Granted Sep 4, 2018·0 cites·18 claims
- 1454US10014214B2Electronic device including moat power metallization in trenchGLOBALFOUNDRIES INC·Filed 2017·Granted Jul 3, 2018·0 cites·5 claims
- 1550US10505112B1CMOS compatible non-filamentary resistive memory stackIBM·Filed 2018·Granted Dec 10, 2019·0 cites·19 claims
- 1647US2014048884A1Disposable carbon-based template layer for formation of borderless contact structuresBREYTA GREGORY·Filed 2012·Application pending·0 cites
- 1747US2014051239A1Disposable carbon-based template layer for formation of borderless contact structuresBREYTA GREGORY·Filed 2012·Application pending·0 cites
- 1842US10332957B2Stacked capacitor with symmetric leakage and break-down behaviorsIBM·Filed 2016·Granted Jun 25, 2019·0 cites·10 claims
- 1942US9018090B2Borderless self-aligned metal contact patterning using printable dielectric materialsCHANG JOSEPHINE B·Filed 2011·Granted Apr 28, 2015·0 cites·7 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →