Inventor · disambiguated record
Shiro Nakanishi
Also filed as: NAKANISHI SHIRO
16 granted patents·2 pending applications·477 citations·filing 1995–2004
95Inventor score
Files withSANYO ELECTRIC CO16
Top patents by PatentIndex Score
18 records- 0195US5721601ADisplay units having two insolating films and a planarizing film and process for producing the sameSANYO ELECTRIC CO·Filed 1995·Granted Feb 24, 1998·186 cites·26 claims
- 0279US6555419B2Thin film transistor and manufacturing method of thin film transistorSANYO ELECTRIC CO·Filed 2000·Granted Apr 29, 2003·21 cites·5 claims
- 0378US6613618B1Thin-film transistor and method of producing the sameSANYO ELECTRIC CO·Filed 2000·Granted Sep 2, 2003·22 cites·12 claims
- 0478US6265730B1Thin-film transistor and method of producing the sameSANYO ELECTRIC CO·Filed 1998·Granted Jul 24, 2001·35 cites·10 claims
- 0576US6191452B1Thin film transistor having a stopper layerSANYO ELECTRIC CO·Filed 1998·Granted Feb 20, 2001·30 cites·5 claims
- 0674US6265247B1Thin-film transistor and manufacturing method for improved contact holeSANYO ELECTRIC CO·Filed 1999·Granted Jul 24, 2001·40 cites·7 claims
- 0774US5962916AThin-film transistor and manufacturing method thereofSANYO ELECTRIC CO·Filed 1998·Granted Oct 5, 1999·39 cites·3 claims
- 0867US6335232B1Method of manufacturing a thin film transistorSANYO ELECTRIC CO·Filed 1998·Granted Jan 1, 2002·28 cites·14 claims
- 0965US7163850B2Bottom gate-type thin-film transistor and method for manufacturing the sameSANYO ELECTRIC CO·Filed 2004·Granted Jan 16, 2007·9 cites·7 claims
- 1065US6548828B2Thin-film transistor and method of manufacturing thin-film transistor with tapered gate of 20 degrees or lessSANYO ELECTRIC CO·Filed 1998·Granted Apr 15, 2003·23 cites·4 claims
- 1161US6815272B2Bottom gate-type thin-film transistor and method for manufacturing the sameSANYO ELECTRIC CO·Filed 2001·Granted Nov 9, 2004·7 cites·8 claims
- 1258US6867075B2Manufacturing method of thin film transistor in which a total film thickness of silicon oxide films is definedSANYO ELECTRIC CO·Filed 2003·Granted Mar 15, 2005·6 cites·4 claims
- 1357US7045818B2Semiconductor device and method of manufacturing the same comprising thin film containing low concentration of hydrogenSANYO ELECTRIC CO·Filed 2004·Granted May 16, 2006·6 cites·2 claims
- 1456US6797651B2Method for manufacturing polycrystalline semiconductor layers and thin-film transistors and laser annealing apparatusSANYO ELECTRIC CO·Filed 2002·Granted Sep 28, 2004·6 cites·11 claims
- 1551US6103557ASemiconductor device or thin-film transistor manufacturing apparatus and manufacturing methodSANYO ELECTRIC CO·Filed 1998·Granted Aug 15, 2000·14 cites·5 claims
- 1641US2003150383A1Semiconductor device or thin-film transistor manufacturing apparatus and manufacturing methodFiled 2003·Application pending·0 cites
- 1740US2005042809A1Bottom gate-type thin-film transistor and method for manufacturing the sameFiled 2004·Application pending·0 cites
- 1839US6750086B2Semiconductor device having a semiconductor thin film containing low concentration of unbound hydrogen atoms and method of manufacturing the sameSANYO ELECTRIC CO·Filed 1998·Granted Jun 15, 2004·5 cites·15 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →