Inventor · disambiguated record
John Pipitone
Also filed as: PIPITONE JOHN · PIPITONE JOHN A
28 granted patents·5 pending applications·326 citations·filing 2005–2019
97Inventor score
Top patents by PatentIndex Score
33 records- 0196US8070925B2Physical vapor deposition reactor with circularly symmetric RF feed and DC feed to the sputter targetHOFFMAN DANIEL J·Filed 2008·Granted Dec 6, 2011·36 cites·18 claims
- 0296US7737702B2Apparatus for wafer level arc detection at an electrostatic chuck electrodeAPPLIED MATERIALS INC·Filed 2007·Granted Jun 15, 2010·37 cites·22 claims
- 0396US7244344B2Physical vapor deposition plasma reactor with VHF source power applied through the workpieceAPPLIED MATERIALS INC·Filed 2005·Granted Jul 17, 2007·34 cites·11 claims
- 0495US7214619B2Method for forming a barrier layer in an integrated circuit in a plasma with source and bias power frequencies applied through the workpieceAPPLIED MATERIALS INC·Filed 2005·Granted May 8, 2007·36 cites·17 claims
- 0594US7768269B2Method of multi-location ARC sensing with adaptive threshold comparisonAPPLIED MATERIALS INC·Filed 2007·Granted Aug 3, 2010·42 cites·16 claims
- 0693US8491759B2RF impedance matching network with secondary frequency and sub-harmonic variantPIPITONE JOHN A·Filed 2010·Granted Jul 23, 2013·29 cites·20 claims
- 0792US10648074B2Physical vapor deposition with isotropic neutral and non-isotropic ion velocity distribution at the wafer surfaceAPPLIED MATERIALS INC·Filed 2019·Granted May 12, 2020·2 cites·18 claims
- 0891US9593411B2Physical vapor deposition chamber with capacitive tuning at wafer supportHOFFMAN DANIEL J·Filed 2012·Granted Mar 14, 2017·8 cites·15 claims
- 0987US7780814B2Wafer pre-clean reactor cable termination for selective suppression/reflection of source and bias frequency cross productsAPPLIED MATERIALS INC·Filed 2005·Granted Aug 24, 2010·15 cites·11 claims
- 1086US8062484B2Method for plasma-enhanced physical vapor deposition of copper with RF source power applied to the targetBROWN KARL M·Filed 2005·Granted Nov 22, 2011·7 cites·17 claims
- 1186US7399943B2Apparatus for metal plasma vapor deposition and re-sputter with source and bias power frequencies applied through the workpieceAPPLIED MATERIALS INC·Filed 2005·Granted Jul 15, 2008·9 cites·18 claims
- 1285US8920611B2Method for controlling radial distribution of plasma ion density and ion energy at a workpiece surface by multi-frequency RF impedance tuningFORSTER JOHN C·Filed 2008·Granted Dec 30, 2014·10 cites·15 claims
- 1385US8512526B2Method of performing physical vapor deposition with RF plasma source power applied to the target using a magnetronBROWN KARL M·Filed 2005·Granted Aug 20, 2013·7 cites·13 claims
- 1485US7804040B2Physical vapor deposition plasma reactor with arcing suppressionAPPLIED MATERIALS INC·Filed 2006·Granted Sep 28, 2010·10 cites·19 claims
- 1583US7750645B2Method of wafer level transient sensing, threshold comparison and arc flag generation/deactivationAPPLIED MATERIALS INC·Filed 2007·Granted Jul 6, 2010·9 cites·24 claims
- 1680US7820020B2Apparatus for plasma-enhanced physical vapor deposition of copper with RF source power applied through the workpiece with a lighter-than-copper carrier gasAPPLIED MATERIALS INC·Filed 2005·Granted Oct 26, 2010·4 cites·16 claims
- 1779US9856558B2Physical vapor deposition method with a source of isotropic ion velocity distribution at the wafer surfaceHOFFMAN DANIEL J·Filed 2008·Granted Jan 2, 2018·3 cites·18 claims
- 1879US8562798B2Physical vapor deposition plasma reactor with RF source power applied to the target and having a magnetronBROWN KARL M·Filed 2005·Granted Oct 22, 2013·4 cites·17 claims
- 1976US8435379B2Substrate cleaning chamber and cleaning and conditioning methodsMEHTA VINEET·Filed 2007·Granted May 7, 2013·6 cites·14 claims
- 2074US10400328B2Physical vapor deposition system with a source of isotropic ion velocity distribution at the wafer surfaceAPPLIED MATERIALS INC·Filed 2017·Granted Sep 3, 2019·0 cites·12 claims
- 2174US9017533B2Apparatus for controlling radial distribution of plasma ion density and ion energy at a workpiece surface by multi-frequency RF impedance tuningFORSTER JOHN C·Filed 2008·Granted Apr 28, 2015·3 cites·20 claims
- 2274US8563428B2Methods for depositing metal in high aspect ratio featuresBROWN KARL·Filed 2011·Granted Oct 22, 2013·1 cites·8 claims
- 2374US7750644B2System with multi-location arc threshold comparators and communication channels for carrying arc detection flags and threshold updatingAPPLIED MATERIALS INC·Filed 2007·Granted Jul 6, 2010·4 cites·14 claims
- 2474US7268076B2Apparatus and method for metal plasma vapor deposition and re-sputter with source and bias power frequencies applied through the workpieceAPPLIED MATERIALS INC·Filed 2005·Granted Sep 11, 2007·6 cites·10 claims
- 2573US7733095B2Apparatus for wafer level arc detection at an RF bias impedance match to the pedestal electrodeAPPLIED MATERIALS INC·Filed 2007·Granted Jun 8, 2010·1 cites·20 claims
- 2668US8846451B2Methods for depositing metal in high aspect ratio featuresRITCHIE ALAN·Filed 2011·Granted Sep 30, 2014·2 cites·20 claims
- 2764US7541289B2Process for removing high stressed film using LF or HF bias power and capacitively coupled VHF source power with enhanced residue captureAPPLIED MATERIALS INC·Filed 2007·Granted Jun 2, 2009·1 cites·3 claims
- 2858US2010089748A1Control of erosion profile on a dielectric rf sputter targetC FORSTER JOHN·Filed 2008·Application pending·0 cites
- 2956US2010314244A1Ionized Physical Vapor Deposition for Microstructure Controlled Thin Film DepositionAPPLIED MATERIALS INC·Filed 2009·Application pending·0 cites
- 3055US8123969B2Process for removing high stressed film using LF or HF bias power and capacitively coupled VHF source power with enhanced residue captureBROWN KARL M·Filed 2009·Granted Feb 28, 2012·0 cites·10 claims
- 3155US2010314245A1Ionized Physical Vapor Deposition for Microstructure Controlled Thin Film DepositionAPPLIED MATERIALS INC·Filed 2009·Application pending·0 cites
- 3246US2013192629A1Substrate cleaning chamber and cleaning and conditioning methodsMEHTA VINEET·Filed 2013·Application pending·0 cites
- 3335US2012097104A1Rf impedance matching network with secondary dc inputPIPITONE JOHN A·Filed 2010·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →