Inventor · disambiguated record
Hong-Gun Kim
Also filed as: KIM HONG-GUN
26 granted patents·7 pending applications·324 citations·filing 2001–2021
96Inventor score
Top patents by PatentIndex Score
33 records- 0194US6566229B2Method of forming an insulating layer in a trench isolation type semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2001·Granted May 20, 2003·102 cites·14 claims
- 0292US10490623B2Semiconductor device including a plurality of electrodes and supportersSAMSUNG ELECTRONICS CO LTD·Filed 2018·Granted Nov 26, 2019·6 cites·20 claims
- 0390US9263536B2Methods of fabricating semiconductor devices with electrode support patternsSAMSUNG ELECTRONICS CO LTD·Filed 2013·Granted Feb 16, 2016·18 cites·18 claims
- 0489US7674685B2Semiconductor device isolation structures and methods of fabricating such structuresSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted Mar 9, 2010·21 cites·32 claims
- 0588US10879345B2Semiconductor device including a plurality of electrodes and supportersSAMSUNG ELECTRONICS CO LTD·Filed 2019·Granted Dec 29, 2020·3 cites·20 claims
- 0688US9627469B2Oxide film, integrated circuit device, and methods of forming the sameSAMSUNG ELECTRONICS CO LTD·Filed 2015·Granted Apr 18, 2017·7 cites·9 claims
- 0785US10170541B2Semiconductor device including a plurality of electrodes and supportersSAMSUNG ELECTRONICS CO LTD·Filed 2017·Granted Jan 1, 2019·3 cites·20 claims
- 0882US8530329B2Methods of fabricating semiconductor devices having various isolation regionsCHOI YONG-SOON·Filed 2011·Granted Sep 10, 2013·9 cites·11 claims
- 0982US7601588B2Method of forming a trench isolation layer and method of manufacturing a non-volatile memory device using the sameSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Oct 13, 2009·12 cites·17 claims
- 1082US7517817B2Method for forming a silicon oxide layer using spin-on glassSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted Apr 14, 2009·7 cites·13 claims
- 1182US6489252B2Method of forming a spin-on-glass insulation layerSAMSUNG ELECTRONICS CO LTD·Filed 2001·Granted Dec 3, 2002·28 cites·11 claims
- 1281US6635586B2Method of forming a spin-on-glass insulation layerSAMSUNG ELECTRONICS CO LTD·Filed 2001·Granted Oct 21, 2003·27 cites·11 claims
- 1380US7192891B2Method for forming a silicon oxide layer using spin-on glassSAMSUNG ELECTRONICS CO LTD·Filed 2003·Granted Mar 20, 2007·21 cites·47 claims
- 1478US7842569B2Flash memory device and method of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Nov 30, 2010·7 cites·18 claims
- 1578US7015144B2Compositions including perhydro-polysilazane used in a semiconductor manufacturing process and methods of manufacturing semiconductor devices using the sameSAMSUNG ELECTRONICS CO LTD·Filed 2004·Granted Mar 21, 2006·15 cites·17 claims
- 1677US7429637B2Compositions including perhydro-polysilazane used in a semiconductor manufacturing process and methods of manufacturing semiconductor devices using the sameSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Sep 30, 2008·3 cites·3 claims
- 1770US11626476B2Semiconductor device including a plurality of electrodes and supportersSAMSUNG ELECTRONICS CO LTD·Filed 2020·Granted Apr 11, 2023·0 cites·20 claims
- 1867US7585786B2Methods of forming spin-on-glass insulating layers in semiconductor devices and associated semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2004·Granted Sep 8, 2009·11 cites·18 claims
- 1965US9142610B2Semiconductor device including supporters on a lower electrode thereof and method of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2013·Granted Sep 22, 2015·2 cites·5 claims
- 2063US6774048B2Method of manufacturing a semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2003·Granted Aug 10, 2004·9 cites·19 claims
- 2160US6645879B2Method of forming a silicon oxide layer of a semiconductor device and method of forming a wiring having the sameSAMSUNG ELECTRONICS CO LTD·Filed 2002·Granted Nov 11, 2003·7 cites·26 claims
- 2259US7358190B2Methods of filling gaps by deposition on materials having different deposition ratesSAMSUNG ELECTRONICS CO LTD·Filed 2003·Granted Apr 15, 2008·6 cites·7 claims
- 2351US12049714B2Metal nanoparticles impregnated activated carbon fiber for removing harmful substances, and method of manufacturing sameUNIV JEONJU IND UNIV COOP·Filed 2021·Granted Jul 30, 2024·0 cites·16 claims
- 2451US7867924B2Methods of reducing impurity concentration in isolating films in semiconductor devicesSAMSUNG ELECTRONICS CO LTD·Filed 2008·Granted Jan 11, 2011·0 cites·19 claims
- 2547US2009012221A1Compositions including perhydro-polysilazane used in a semiconductor manufacturing processSAMSUNG ELECTRONICS CO LTD·Filed 2008·Application pending·0 cites
- 2643US11753722B2Method of preparing nanocomposite material plated with network-type metal layer through silica self-cracks and wearable electronics carbon fiber prepared therefromUNIV JEONJU IND UNIV COOP·Filed 2021·Granted Sep 12, 2023·0 cites·3 claims
- 2742US7534698B2Methods of forming semiconductor devices having multilayer isolation structuresSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted May 19, 2009·0 cites·28 claims
- 2842US2011037109A1Semiconductor devices including lower and upper device isolation patternsSAMSUNG ELECTRONICS CO LTD·Filed 2010·Application pending·0 cites
- 2941US2007020879A1Method of forming an isolation layer and method of manufacturing a field effect transistor using the sameSAMSUNG ELECTRONICS CO LTD·Filed 2006·Application pending·0 cites
- 3040US2007004139A1Method of manufacturing a non-volatile semiconductor deviceKIM HONG-GUN·Filed 2006·Application pending·0 cites
- 3138US2008121977A1Semiconductor device and method of manufacturing having the sameCHOI YONG-SOON·Filed 2007·Application pending·0 cites
- 3238US2004169005A1Methods for forming a thin film on an integrated circuit including soft baking a silicon glass filmFiled 2003·Application pending·0 cites
- 3336US2011207334A1Method of manufacturing semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2010·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →