Inventor · disambiguated record
Turgut Sahin
Also filed as: SAHIN TURGUT
27 granted patents·7 pending applications·3,908 citations·filing 1991–2007
98Inventor score
Top patents by PatentIndex Score
34 records- 0199US5882424APlasma cleaning of a CVD or etch reactor using a low or mixed frequency excitation fieldAPPLIED MATERIALS INC·Filed 1997·Granted Mar 16, 1999·325 cites·30 claims
- 0298US6624064B1Chamber seasoning method to improve adhesion of F-containing dielectric film to metal for VLSI applicationAPPLIED MATERIALS INC·Filed 1997·Granted Sep 23, 2003·583 cites·17 claims
- 0398US6454860B2Deposition reactor having vaporizing, mixing and cleaning capabilitiesAPPLIED MATERIALS INC·Filed 1998·Granted Sep 24, 2002·692 cites·22 claims
- 0498US6379466B1Temperature controlled gas distribution plateAPPLIED MATERIALS INC·Filed 1994·Granted Apr 30, 2002·468 cites·2 claims
- 0597US6136685AHigh deposition rate recipe for low dielectric constant filmsAPPLIED MATERIALS INC·Filed 1997·Granted Oct 24, 2000·343 cites·14 claims
- 0696US6204203B1Post deposition treatment of dielectric films for interface controlAPPLIED MATERIALS INC·Filed 1998·Granted Mar 20, 2001·271 cites·16 claims
- 0795US6465051B1Method of operating high density plasma CVD reactor with combined inductive and capacitive couplingAPPLIED MATERIALS INC·Filed 1996·Granted Oct 15, 2002·221 cites·28 claims
- 0894US6387761B1Anneal for enhancing the electrical characteristic of semiconductor devicesAPPLIED MATERIALS INC·Filed 2000·Granted May 14, 2002·74 cites·10 claims
- 0994US6121161AReduction of mobile ion and metal contamination in HDP-CVD chambers using chamber seasoning film depositionsAPPLIED MATERIALS INC·Filed 1999·Granted Sep 19, 2000·119 cites·8 claims
- 1093US6450116B1Apparatus for exposing a substrate to plasma radicalsAPPLIED MATERIALS INC·Filed 1999·Granted Sep 17, 2002·114 cites·30 claims
- 1192US6211065B1Method of depositing and amorphous fluorocarbon film using HDP-CVDAPPLIED MATERIALS INC·Filed 1997·Granted Apr 3, 2001·100 cites·19 claims
- 1291US7250309B2Integrated phase angle and optical critical dimension measurement metrology for feed forward and feedback process controlAPPLIED MATERIALS INC·Filed 2004·Granted Jul 31, 2007·39 cites·19 claims
- 1387US6200911B1Method and apparatus for modifying the profile of narrow, high-aspect-ratio gaps using differential plasma powerAPPLIED MATERIALS INC·Filed 1998·Granted Mar 13, 2001·57 cites·3 claims
- 1486US5811356AReduction in mobile ion and metal contamination by varying season time and bias RF power during chamber cleaningAPPLIED MATERIALS INC·Filed 1996·Granted Sep 22, 1998·48 cites·18 claims
- 1585US6383954B1Process gas distribution for forming stable fluorine-doped silicate glass and other filmsAPPLIED MATERIALS INC·Filed 1999·Granted May 7, 2002·90 cites·33 claims
- 1683US6579811B2Method and apparatus for modifying the profile of narrow, high-aspect-ratio gaps through wafer heatingAPPLIED MATERIALS INC·Filed 2000·Granted Jun 17, 2003·19 cites·12 claims
- 1781US6037235AHydrogen anneal for curing defects of silicon/nitride interfaces of semiconductor devicesAPPLIED MATERIALS INC·Filed 1998·Granted Mar 14, 2000·52 cites·23 claims
- 1881US5626678ANon-conductive alignment member for uniform plasma processing of substratesAPPLIED MATERIALS INC·Filed 1995·Granted May 6, 1997·37 cites·32 claims
- 1980US6323119B1CVD deposition method to improve adhesion of F-containing dielectric metal lines for VLSI applicationAPPLIED MATERIALS INC·Filed 1997·Granted Nov 27, 2001·59 cites·18 claims
- 2079US5976993AMethod for reducing the intrinsic stress of high density plasma filmsAPPLIED MATERIALS INC·Filed 1996·Granted Nov 2, 1999·53 cites·21 claims
- 2175US6518203B2Method and apparatus for integrating a metal nitride film in a semiconductor deviceAPPLIED MATERIALS INC·Filed 2001·Granted Feb 11, 2003·18 cites·22 claims
- 2274US6375744B2Sequential in-situ heating and deposition of halogen-doped silicon oxideAPPLIED MATERIALS INC·Filed 2001·Granted Apr 23, 2002·17 cites·11 claims
- 2374US6337289B1Method and apparatus for integrating a metal nitride film in a semiconductor deviceAPPLIED MATERIALS INC·Filed 1999·Granted Jan 8, 2002·38 cites·10 claims
- 2463US6228781B1Sequential in-situ heating and deposition of halogen-doped silicon oxideAPPLIED MATERIALS INC·Filed 1997·Granted May 8, 2001·25 cites·16 claims
- 2554US5201990AProcess for treating aluminum surfaces in a vacuum apparatusAPPLIED MATERIALS INC·Filed 1991·Granted Apr 13, 1993·23 cites·21 claims
- 2652US6218300B1Method and apparatus for forming a titanium doped tantalum pentaoxide dielectric layer using CVDAPPLIED MATERIALS INC·Filed 1998·Granted Apr 17, 2001·15 cites·30 claims
- 2751US2007296980A1Integrated phase angle and optical critical dimension measurement metrology for feed forward and feedback process controlMAK ALFRED W·Filed 2007·Application pending·0 cites
- 2845US2002192370A1Deposition reactor having vaporizing, mixing and cleaning capabilitiesFiled 2002·Application pending·0 cites
- 2941US7294205B1Method for reducing the intrinsic stress of high density plasma filmsAPPLIED MATERIALS INC·Filed 1999·Granted Nov 13, 2007·8 cites·17 claims
- 3041US2003157812A1Method and apparatus for modifying the profile of narrow, high-aspect-ratio gaps using RF powerAPPLIED MATERIALS INC·Filed 2003·Application pending·0 cites
- 3139US2005133166A1Tuned potential pedestal for mask etch processing apparatusAPPLIED MATERIALS INC·Filed 2004·Application pending·0 cites
- 3238US2003220708A1Integrated equipment set for forming shallow trench isolation regionsAPPLIED MATERIALS INC·Filed 2002·Application pending·0 cites
- 3336US2002168847A1Methods of forming a nitridated surface on a metallic layer and products produced therebyAPPLIED MATERIALS INC·Filed 2001·Application pending·0 cites
- 3429US2002009861A1Method and apparatus for the formation of dielectric layersFiled 1998·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →