Inventor · disambiguated record
Jeong-Nam Han
Also filed as: HAN JEONG-NAM
38 granted patents·11 pending applications·150 citations·filing 2004–2018
97Inventor score
Top patents by PatentIndex Score
49 records- 0192US9786764B2Fin-FET semiconductor device with a source/drain contact having varying different widthsSAMSUNG ELECTRONICS CO LTD·Filed 2015·Granted Oct 10, 2017·10 cites·18 claims
- 0291US9728535B2Methods of fabricating semiconductor devices including fin-shaped active regionsYOUN YOUNG-SANG·Filed 2016·Granted Aug 8, 2017·11 cites·18 claims
- 0389US9305825B2Methods of fabricating semiconductor devices including fin-shaped active regionsSAMSUNG ELECTRONICS CO LTD·Filed 2014·Granted Apr 5, 2016·7 cites·20 claims
- 0488US10192973B2Methods of forming semiconductor devices including trench walls having multiple slopesSAMSUNG ELECTRONICS CO LTD·Filed 2016·Granted Jan 29, 2019·5 cites·17 claims
- 0587US8790470B2Etching, cleaning and drying methods using supercritical fluid and chamber systems using these methodsLEE HYO-SAN·Filed 2011·Granted Jul 29, 2014·8 cites·35 claims
- 0686US9443979B2Semiconductor devices including trench walls having multiple slopesPARK SANG-JINE·Filed 2014·Granted Sep 13, 2016·7 cites·20 claims
- 0786US8673724B2Methods of fabricating semiconductor devicesPARK SANG-JINE·Filed 2012·Granted Mar 18, 2014·9 cites·20 claims
- 0884US8084367B2Etching, cleaning and drying methods using supercritical fluid and chamber systems using these methodsLEE HYO-SAN·Filed 2007·Granted Dec 27, 2011·9 cites·31 claims
- 0982US10090190B2Methods of fabricating semiconductor devices including fin-shaped active regionsSAMSUNG ELECTRONICS CO LTD·Filed 2017·Granted Oct 2, 2018·2 cites·18 claims
- 1082US8803248B2Semiconductor devices and methods of manufacturing the samePARK SANG-JINE·Filed 2011·Granted Aug 12, 2014·5 cites·6 claims
- 1182US8585917B2Etching, cleaning and drying methods using supercritical fluid and chamber systems using these methodsLEE HYO-SAN·Filed 2011·Granted Nov 19, 2013·5 cites·36 claims
- 1281US10821572B2Method of controlling a temperature of a chemical mechanical polishing process, temperature control, and CMP apparatus including the temperature controlSAMSUNG ELECTRONICS CO LTD·Filed 2018·Granted Nov 3, 2020·2 cites·18 claims
- 1379US9466697B2Semiconductor devices and methods of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2015·Granted Oct 11, 2016·2 cites·8 claims
- 1479US9136135B2Method of fabricating semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2013·Granted Sep 15, 2015·4 cites·12 claims
- 1579US7498217B2Methods of manufacturing semiconductor memory devices with unit cells having charge trapping layersSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted Mar 3, 2009·9 cites·26 claims
- 1677US7857939B2Apparatus for treating wafers using supercritical fluidSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted Dec 28, 2010·4 cites·11 claims
- 1773US8951383B2Apparatus for treating wafers using supercritical fluidLEE HYO-SAN·Filed 2010·Granted Feb 10, 2015·2 cites·13 claims
- 1873US7354868B2Methods of fabricating a semiconductor device using a dilute aqueous solution of an ammonia and peroxide mixtureSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Apr 8, 2008·4 cites·16 claims
- 1972US7820508B2Semiconductor device having capacitor and method of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Oct 26, 2010·3 cites·17 claims
- 2071US8685272B2Composition for etching silicon oxide layer, method for etching semiconductor device using the same, and composition for etching semiconductor deviceKIM GO-UN·Filed 2009·Granted Apr 1, 2014·5 cites·15 claims
- 2171US8652915B2Methods of fabricating semiconductor devices using preliminary trenches with epitaxial growthAHN KEVIN·Filed 2011·Granted Feb 18, 2014·4 cites·16 claims
- 2271US8110499B2Method of forming a contact structureKANG DAE-HYUK·Filed 2009·Granted Feb 7, 2012·5 cites·15 claims
- 2371US7985999B2Semiconductor device having capacitorSAMSUNG ELECTRONICS CO LTD·Filed 2010·Granted Jul 26, 2011·2 cites·8 claims
- 2469US9054210B2Method of fabricating semiconductor devicePARK SANG-JINE·Filed 2012·Granted Jun 9, 2015·2 cites·19 claims
- 2568US8796107B2Methods for fabricating semiconductor devicesSAMSUNG ELECTRONICS CO LTD·Filed 2012·Granted Aug 5, 2014·2 cites·10 claims
- 2667US8404580B2Methods for fabricating semiconductor devicesPARK SANG-JINE·Filed 2012·Granted Mar 26, 2013·2 cites·20 claims
- 2764US9040415B2Semiconductor device and method of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2014·Granted May 26, 2015·1 cites·20 claims
- 2863US7018892B2Semiconductor capacitor structure and method for manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2004·Granted Mar 28, 2006·10 cites·30 claims
- 2962US8092698B2Methods of forming semiconductor devices formed by processes including the use of specific etchant solutionsKIM YU-KYUNG·Filed 2008·Granted Jan 10, 2012·2 cites·11 claims
- 3062US7544985B2Semiconductor capacitor structure and method for manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Jun 9, 2009·2 cites·9 claims
- 3161US10424503B2Methods of fabricating semiconductor devices including fin-shaped active regionsSAMSUNG ELECTRONICS CO LTD·Filed 2018·Granted Sep 24, 2019·0 cites·20 claims
- 3261US9754806B2Apparatus for treating wafers using supercritical fluidSAMSUNG ELECTRONICS CO LTD·Filed 2014·Granted Sep 5, 2017·0 cites·19 claims
- 3357US7704828B2Method of fabricating a semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted Apr 27, 2010·1 cites·26 claims
- 3454US7122478B2Method of manufacturing a semiconductor device using a polysilicon etching maskSAMSUNG ELECTRONICS CO LTD·Filed 2004·Granted Oct 17, 2006·4 cites·4 claims
- 3553US2008160743A1Composition for cleaning substrates and method of forming gate using the compositionSAMSUNG ELECTRONICS CO LTD·Filed 2007·Application pending·0 cites
- 3652US2014322881A1Semiconductor devices and methods of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2014·Application pending·0 cites
- 3750US8058180B2Methods of fabricating a semiconductor device using a dilute aqueous solution of an ammonia and peroxide mixtureKWON DOO-WON·Filed 2008·Granted Nov 15, 2011·0 cites·15 claims
- 3849US2007051700A1Composition for cleaning substrates and method of forming gate using the compositionLEE HYO-SAN·Filed 2006·Application pending·0 cites
- 3947US2006028865A1Etchant solutions and methods of forming semiconductor devices formed by processes including the sameSAMSUNG ELECTRONICS CO LTD·Filed 2005·Application pending·0 cites
- 4047US2010267225A1Method of manufacturing semiconductor deviceLEE HYO-SAN·Filed 2009·Application pending·0 cites
- 4145US2015364574A1Semiconductor devices and methods of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2014·Application pending·0 cites
- 4244US10297474B2Chemical supplier, processing apparatus including the chemical supplierSAMSUNG ELECTRONICS CO LTD·Filed 2014·Granted May 21, 2019·0 cites·21 claims
- 4344US8709942B2Methods for fabricating semiconductor devicesPARK SANG-JINE·Filed 2012·Granted Apr 29, 2014·0 cites·20 claims
- 4443US2008047576A1Single-substrate type apparatus for processing a substrateSAMSUNG ELECTRONICS CO LTD·Filed 2007·Application pending·0 cites
- 4541US2014206169A1Methods of Fabricating Semiconductor Device Using Nitridation of Isolation LayersSAMSUNG ELECTRONICS CO LTD·Filed 2013·Application pending·0 cites
- 4640US2006246666A1Method of fabricating flash memory with u-shape floating gateHAN JEONG-NAM·Filed 2006·Application pending·0 cites
- 4738US2012049250A1Semiconductor Integrated Circuit Device Including an Epitaxial LayerPARK SANG-JINE·Filed 2011·Application pending·0 cites
- 4836US2011287625A1Methods of forming a pattern, methods of forming a gate structure and methods of manufacturing a semiconductor device using the sameKANG DAE-HYUK·Filed 2011·Application pending·0 cites
- 4935US9812367B2Method for fabricating semiconductor device including replacement process of forming at least one metal gate structureKIM JU-YOUN·Filed 2015·Granted Nov 7, 2017·0 cites·19 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →