Inventor · disambiguated record
Masaaki Koizuka
Also filed as: KOIZUKA MASAAKI
5 granted patents·43 citations·filing 1994–2008
79Inventor score
Technology areasH10P
Top patents by PatentIndex Score
5 records- 0190US7446394B2Semiconductor device fabricated by selective epitaxial growth methodFUJITSU LTD·Filed 2007·Granted Nov 4, 2008·13 cites·8 claims
- 0277US7679147B2Semiconductor device fabricated by selective epitaxial growth methodFUJITSU MICROELECTRONICS LTD·Filed 2008·Granted Mar 16, 2010·4 cites·9 claims
- 0356US8497191B2Selective epitaxial growth method using halogen containing gate sidewall maskFUKUDA MASAHIRO·Filed 2008·Granted Jul 30, 2013·0 cites·10 claims
- 0449US5505157ALow hydrogen-content silicon crystal with few micro-defects caused from annealing, and its manufacturing methodsFUJITSU LTD·Filed 1994·Granted Apr 9, 1996·17 cites·20 claims
- 0542US5641353ALow hydrogen-content silicon crystal with few micro-defects caused from annealingFUJITSU LTD·Filed 1995·Granted Jun 24, 1997·9 cites·3 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →