Inventor · disambiguated record
Samphy Hong
Also filed as: HONG SAMPHY
13 granted patents·3 pending applications·3 citations·filing 2020–2024
82Inventor score
Files withAPPLIED MATERIALS INC16
Top patents by PatentIndex Score
16 records- 0185US11804537B2Channeled implants for SiC MOSFET fabricationAPPLIED MATERIALS INC·Filed 2021·Granted Oct 31, 2023·1 cites·20 claims
- 0283US11527637B2Ion implantation to control formation of MOSFET trench-bottom oxideAPPLIED MATERIALS INC·Filed 2021·Granted Dec 13, 2022·1 cites·20 claims
- 0376US11387338B1Methods for forming planar metal-oxide-semiconductor field-effect transistorsAPPLIED MATERIALS INC·Filed 2021·Granted Jul 12, 2022·1 cites·17 claims
- 0474US2025081583A1MOSFET Gate Shielding Using an Angled ImplantAPPLIED MATERIALS INC·Filed 2024·Application pending·0 cites
- 0567US12183794B2MOSFET gate shielding using an angled implantAPPLIED MATERIALS INC·Filed 2021·Granted Dec 31, 2024·0 cites·14 claims
- 0659US12308237B2Ion implantation to increase MOSFET threshold voltageAPPLIED MATERIALS INC·Filed 2021·Granted May 20, 2025·0 cites·16 claims
- 0759US2024411085A1Selective waveguide ion implantation to adjust local refractive index for photonicsAPPLIED MATERIALS INC·Filed 2023·Application pending·0 cites
- 0857US12412789B2Endpoint optimization for semiconductor processesAPPLIED MATERIALS INC·Filed 2022·Granted Sep 9, 2025·0 cites·20 claims
- 0954US11695060B2Ion implantation to form trench-bottom oxide of MOSFETAPPLIED MATERIALS INC·Filed 2020·Granted Jul 4, 2023·0 cites·20 claims
- 1054US11437488B2Split-gate MOSFET with gate shieldAPPLIED MATERIALS INC·Filed 2020·Granted Sep 6, 2022·0 cites·16 claims
- 1154US2024145217A1Method for forming highly uniform dielectric filmAPPLIED MATERIALS INC·Filed 2022·Application pending·0 cites
- 1253US12046473B2Backside wafer dopant activationAPPLIED MATERIALS INC·Filed 2021·Granted Jul 23, 2024·0 cites·16 claims
- 1351US12087585B2Low-temperature implant for buried layer formationAPPLIED MATERIALS INC·Filed 2021·Granted Sep 10, 2024·0 cites·14 claims
- 1451US11798982B2Self-aligned trench MOSFETAPPLIED MATERIALS INC·Filed 2021·Granted Oct 24, 2023·0 cites·18 claims
- 1550US11721743B2Implantation enabled precisely controlled source and drain etch depthAPPLIED MATERIALS INC·Filed 2020·Granted Aug 8, 2023·0 cites·14 claims
- 1650US11527412B2Method for increasing photoresist etch selectivity to enable high energy hot implant in SiC devicesAPPLIED MATERIALS INC·Filed 2020·Granted Dec 13, 2022·0 cites·20 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →