Inventor · disambiguated record
Martin Trentzsch
Also filed as: TRENTZSCH MARTIN
26 granted patents·7 pending applications·108 citations·filing 2007–2017
95Inventor score
Files withGLOBALFOUNDRIES INC13KRONHOLZ STEPHAN4CARTER RICHARD3TRENTZSCH MARTIN3ADVANCED MICRO DEVICES INC2
Top patents by PatentIndex Score
33 records- 0192US10163933B1Ferro-FET device with buried buffer/ferroelectric layer stackGLOBALFOUNDRIES INC·Filed 2017·Granted Dec 25, 2018·8 cites·10 claims
- 0291US8445344B2Uniform high-k metal gate stacks by adjusting threshold voltage for sophisticated transistors by diffusing a metal species prior to gate patterningCARTER RICHARD·Filed 2010·Granted May 21, 2013·17 cites·21 claims
- 0391US8021942B2Method of forming CMOS device having gate insulation layers of different type and thicknessGLOBALFOUNDRIES INC·Filed 2008·Granted Sep 20, 2011·23 cites·22 claims
- 0485US9064900B2FinFET method comprising high-K dielectricGLOBALFOUNDRIES INC·Filed 2013·Granted Jun 23, 2015·6 cites·18 claims
- 0583US8198192B2Adjusting threshold voltage for sophisticated transistors by diffusing a gate dielectric cap layer material prior to gate dielectric stabilizationCARTER RICHARD·Filed 2010·Granted Jun 12, 2012·6 cites·18 claims
- 0681US8349695B2Work function adjustment in high-k gate stacks including gate dielectrics of different thicknessGLOBALFOUNDRIES INC·Filed 2010·Granted Jan 8, 2013·6 cites·19 claims
- 0781US8247282B2Enhancing interface characteristics between a channel semiconductor alloy and a gate dielectric by an oxidation processKRONHOLZ STEPHAN·Filed 2010·Granted Aug 21, 2012·6 cites·17 claims
- 0878US8378432B2Maintaining integrity of a high-K gate stack by an offset spacer used to determine an offset of a strain-inducing semiconductor alloyGLOBALFOUNDRIES INC·Filed 2010·Granted Feb 19, 2013·5 cites·25 claims
- 0978US8119461B2Reducing the creation of charge traps at gate dielectrics in MOS transistors by performing a hydrogen treatmentTRENTZSCH MARTIN·Filed 2010·Granted Feb 21, 2012·5 cites·3 claims
- 1075US8486786B2Enhancing uniformity of a channel semiconductor alloy by forming STI structures after the growth processKRONHOLZ STEPHAN·Filed 2010·Granted Jul 16, 2013·4 cites·24 claims
- 1175US7994037B2Gate dielectrics of different thickness in PMOS and NMOS transistorsADVANCED MICRO DEVICES INC·Filed 2009·Granted Aug 9, 2011·6 cites·20 claims
- 1273US7745334B2Technique for locally adapting transistor characteristics by using advanced laser/flash anneal techniquesADVANCED MICRO DEVICES INC·Filed 2007·Granted Jun 29, 2010·4 cites·17 claims
- 1372US8872285B2Metal gate structure for semiconductor devicesGLOBALFOUNDRIES INC·Filed 2013·Granted Oct 28, 2014·3 cites·2 claims
- 1468US8525289B2Adjusting threshold voltage for sophisticated transistors by diffusing a gate dielectric cap layer material prior to gate dielectric stabilizationCARTER RICHARD·Filed 2012·Granted Sep 3, 2013·2 cites·7 claims
- 1567US9236482B2Semiconductor device with field-inducing structureGLOBALFOUNDRIES INC·Filed 2015·Granted Jan 12, 2016·1 cites·22 claims
- 1667US8293610B2Semiconductor device comprising a metal gate stack of reduced height and method of forming the sameBEYER SVEN·Filed 2008·Granted Oct 23, 2012·3 cites·18 claims
- 1762US8823138B1Semiconductor resistor including a dielectric layer including a species creating fixed charges and method for the formation thereofGLOBALFOUNDRIES INC·Filed 2013·Granted Sep 2, 2014·1 cites·24 claims
- 1854US8993459B2Method of forming a material layer in a semiconductor structureGRASS CARSTEN·Filed 2012·Granted Mar 31, 2015·1 cites·17 claims
- 1952US8158065B2In situ monitoring of metal contamination during microstructure processingTRENTZSCH MARTIN·Filed 2009·Granted Apr 17, 2012·0 cites·18 claims
- 2051US8735240B2CET and gate current leakage reduction in high-k metal gate electrode structures by heat treatment after diffusion layer removalKELWING TORBEN·Filed 2012·Granted May 27, 2014·1 cites·17 claims
- 2148US8609482B2Enhancing interface characteristics between a channel semiconductor alloy and a gate dielectric by an oxidation processKRONHOLZ STEPHAN·Filed 2012·Granted Dec 17, 2013·0 cites·15 claims
- 2246US2009170339A1Reducing the creation of charge traps at gate dielectrics in mos transistors by performing a hydrogen treatmentTRENTZSCH MARTIN·Filed 2008·Application pending·0 cites
- 2343US10084057B2NVM device in SOI technology and method of fabricating an according deviceGLOBALFOUNDRIES INC·Filed 2016·Granted Sep 25, 2018·0 cites·18 claims
- 2442US9508588B2Methods for fabricating integrated circuits with isolation regions having uniform step heightsGLOBALFOUNDRIES INC·Filed 2014·Granted Nov 29, 2016·0 cites·20 claims
- 2542US8658490B2Passivating point defects in high-K gate dielectric layers during gate stack formationERBEN ELKE·Filed 2012·Granted Feb 25, 2014·0 cites·22 claims
- 2641US8101512B2Method of enhancing lithography capabilities during gate formation in semiconductors having a pronounced surface topographyGERHARDT MARTIN·Filed 2007·Granted Jan 24, 2012·0 cites·20 claims
- 2741US2014264626A1Method for forming a gate electrode of a semiconductor device, gate electrode structure for a semiconductor device and according semiconductor device structureGLOBALFOUNDRIES INC·Filed 2014·Application pending·0 cites
- 2841US2015179740A1Transistor device with strained layerGLOBAL FOUNDRIES INC·Filed 2013·Application pending·0 cites
- 2939US2013280873A1Enhanced device reliability of a semiconductor device by providing superior process conditions in high-k film growthGLOBALFOUNDRIES INC·Filed 2013·Application pending·0 cites
- 3037US8735253B2Adjusting of a non-silicon fraction in a semiconductor alloy during transistor fabrication by an intermediate oxidation processKRONHOLZ STEPHAN·Filed 2010·Granted May 27, 2014·0 cites·27 claims
- 3135US2018269081A1System and method for status-dependent controlling of a substrate ambient in microprocessingGLOBALFOUNDRIES INC·Filed 2017·Application pending·0 cites
- 3232US2013126984A1Patterning of Sensitive Metal-Containing Layers With Superior Mask Material Adhesion by Providing a Modified Surface LayerREIMER BERTHOLD·Filed 2011·Application pending·0 cites
- 3326US2013277766A1Multiple high-k metal gate stacks in a field effect transistorKELWING TORBEN·Filed 2012·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →