Inventor · disambiguated record
Kazutoshi Nagata
Also filed as: NAGATA KAZUTOSHI
10 granted patents·9 pending applications·13 citations·filing 2011–2022
81Inventor score
Top patents by PatentIndex Score
19 records- 0179US8937721B2Sensing deviceFUJIMAKI MAKOTO·Filed 2011·Granted Jan 20, 2015·4 cites·11 claims
- 0278US10756254B2Composite substrate and method of manufacturing composite substrateSHINETSU CHEMICAL CO·Filed 2017·Granted Aug 25, 2020·2 cites·10 claims
- 0374US9312166B2Method for manufacturing composite wafersAKIYAMA SHOJI·Filed 2012·Granted Apr 12, 2016·3 cites·10 claims
- 0469US9741603B2Method for producing hybrid substrate, and hybrid substrateSHINETSU CHEMICAL CO·Filed 2014·Granted Aug 22, 2017·2 cites·9 claims
- 0567US9646873B2Method for producing SOS substrates, and SOS substrateSHINETSU CHEMICAL CO·Filed 2013·Granted May 9, 2017·2 cites·5 claims
- 0653US11001036B2Sapphire composite base material and method for producing the sameSHINETSU CHEMICAL CO·Filed 2016·Granted May 11, 2021·0 cites·6 claims
- 0752US2024258462A1Epitaxial wafer for ultraviolet ray emission device and method for manufacturing the sameSHINETSU HANDOTAI KK·Filed 2022·Application pending·0 cites
- 0849US11932936B2Method for producing a group III compound crystal by hydride vapor phase epitaxy on a seed substrate formed on a group III nitride base substrateSHINETSU CHEMICAL CO·Filed 2020·Granted Mar 19, 2024·0 cites·14 claims
- 0949US2024117525A1Nitride semiconductor substrate and method for producing the sameSHINETSU HANDOTAI KK·Filed 2022·Application pending·0 cites
- 1048US2023250552A1Base substrate for group iii-v compound crystals and production method for sameSHINETSU CHEMICAL CO·Filed 2021·Application pending·0 cites
- 1147US2023018136A1Method for manufacturing group iii nitride substrate, and group iii nitride substrateSHINETSU CHEMICAL CO·Filed 2020·Application pending·0 cites
- 1246US2023284533A1Piezoelectric composite substrate and method for manufacturing sameSHINETSU CHEMICAL CO·Filed 2021·Application pending·0 cites
- 1346US2018048283A1Lithium tantalate single crystal substrate, bonded substrate, manufacturing method of the bonded substrate, and surface acoustic wave device using the bonded substrateSHINETSU CHEMICAL CO·Filed 2017·Application pending·0 cites
- 1445US11479876B2Method for producing GaN laminate substrate having front surface which is Ga polarity surfaceSHINETSU CHEMICAL CO·Filed 2019·Granted Oct 25, 2022·0 cites·13 claims
- 1545US10103021B2Thermally oxidized heterogeneous composite substrate and method for manufacturing sameSHINETSU CHEMICAL CO·Filed 2013·Granted Oct 16, 2018·0 cites·11 claims
- 1645US2022235489A1Method for manufacturing group iii compound substrate, and group iii compound substrateSHINETSU CHEMICAL CO·Filed 2020·Application pending·0 cites
- 1744US12512804B2Method for manufacturing composite substrate provided with piezoelectric single crystal filmSHINETSU CHEMICAL CO·Filed 2021·Granted Dec 30, 2025·0 cites·5 claims
- 1844US2022220634A1Device and method for manufacturing group iii nitride substrateSHINETSU CHEMICAL CO·Filed 2020·Application pending·0 cites
- 1940US2014235032A1Method for producing transparent soi waferSHINETSU CHEMICAL CO·Filed 2012·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →