Inventor · disambiguated record
Tomas Palacios
Also filed as: PALACIOS TOMAS · PALACIOS TOMAS A · PALACIOS TOMAS APOSTOL · PALACIOS TOMÁS
27 granted patents·7 pending applications·128 citations·filing 2006–2024
95Inventor score
Top patents by PatentIndex Score
34 records- 0194US8114717B2Methods to shape the electric field in electron devices, passivate dislocations and point defects, and enhance the luminescence efficiency of optical devicesPALACIOS TOMAS·Filed 2006·Granted Feb 14, 2012·50 cites·53 claims
- 0292US9570600B2Semiconductor structure and recess formation etch techniqueMASSACHUSETTS INST TECHNOLOGY·Filed 2013·Granted Feb 14, 2017·15 cites·45 claims
- 0392US8587031B2Dual-gate normally-off nitride transistorsLU BIN·Filed 2012·Granted Nov 19, 2013·15 cites·21 claims
- 0486US10914637B2Ultrasensitive thermo-mechanical bolometerMASSACHUSETTS INST TECHNOLOGY·Filed 2019·Granted Feb 9, 2021·4 cites·19 claims
- 0583US10566192B2Transistor structure having buried island regionsCAMBRIDGE ELECTRONICS INC·Filed 2015·Granted Feb 18, 2020·4 cites·9 claims
- 0678US9455342B2Electric field management for a group III-nitride semiconductor deviceCAMBRIDGE ELECTRONICS INC·Filed 2014·Granted Sep 27, 2016·4 cites·22 claims
- 0778US8759876B2Enhancement-mode nitride transistorLU BIN·Filed 2009·Granted Jun 24, 2014·7 cites·16 claims
- 0877US10217641B2Control of current collapse in thin patterned GaNIBM·Filed 2016·Granted Feb 26, 2019·2 cites·16 claims
- 0973US10871466B2Sensor systems and related fabrication techniquesMASSACHUSETTS INST TECHNOLOGY·Filed 2016·Granted Dec 22, 2020·2 cites·9 claims
- 1073US9812525B2Universal methodology to synthesize diverse two-dimensional heterostructuresMASSACHUSETTS INST TECHNOLOGY·Filed 2016·Granted Nov 7, 2017·2 cites·25 claims
- 1173US8703623B2Fabrication technique for gallium nitride substratesCHUNG JINWOOK·Filed 2009·Granted Apr 22, 2014·7 cites·10 claims
- 1268US10439059B2High-linearity transistorsMASSACHUSETTS INST TECHNOLOGY·Filed 2017·Granted Oct 8, 2019·2 cites·24 claims
- 1368US10256352B2Structures for nitride vertical transistorsMASSACHUSETTS INST TECHNOLOGY·Filed 2016·Granted Apr 9, 2019·1 cites·23 claims
- 1467US9041003B2Semiconductor devices having a recessed electrode structureMASSACHUSETTS INST TECHNOLOGY·Filed 2012·Granted May 26, 2015·2 cites·14 claims
- 1565US9337301B2Aluminum nitride based semiconductor devicesMASSACHUSETTS INST TECHNOLOGY·Filed 2012·Granted May 10, 2016·2 cites·16 claims
- 1663US8921892B2High-performance nitride semiconductor devicesPALACIOS TOMAS APOSTOL·Filed 2011·Granted Dec 30, 2014·3 cites·34 claims
- 1763US8188459B2Devices based on SI/nitride structuresPALACIOS TOMAS·Filed 2009·Granted May 29, 2012·3 cites·18 claims
- 1861US12176454B1Optically controlled semiconductor devicesMASSACHUSETTS INST TECHNOLOGY·Filed 2024·Granted Dec 24, 2024·0 cites·20 claims
- 1961US9704959B2Enhancement-mode transistors with increased threshold voltageMASSACHUSETTS INST TECHNOLOGY·Filed 2014·Granted Jul 11, 2017·1 cites·19 claims
- 2061US9634111B2Passivation technique for wide bandgap semiconductor devicesMASSACHUSETTS INST TECHNOLOGY·Filed 2013·Granted Apr 25, 2017·1 cites·20 claims
- 2161US9293538B2Diode having trenches in a semiconductor regionMASSACHUSETTS INST TECHNOLOGY·Filed 2013·Granted Mar 22, 2016·1 cites·15 claims
- 2254US2020027745A1Control of current collapse in thin patterned ganIBM·Filed 2018·Application pending·0 cites
- 2352US2024162105A1Semiconductor Device with Electric Field Management StructuresMASSACHUSETTS INST TECHNOLOGY·Filed 2022·Application pending·0 cites
- 2448US12113061B2Semiconductor device with linear capacitanceMASSACHUSETTS INST TECHNOLOGY·Filed 2021·Granted Oct 8, 2024·0 cites·19 claims
- 2548US9911813B2Reducing leakage current in semiconductor devicesMASSACHUSETTS INST TECHNOLOGY·Filed 2013·Granted Mar 6, 2018·0 cites·16 claims
- 2648US2016365437A1Electric field management for a group iii-nitride semiconductor deviceCAMBRIDGE ELECTRONICS INC·Filed 2016·Application pending·0 cites
- 2746US9711594B2Improving linearity in semiconductor devicesMASSACHUSETTS INST TECHNOLOGY·Filed 2015·Granted Jul 18, 2017·0 cites·25 claims
- 2844US2016284811A1Electronics including graphene-based hybrid structuresMASSACHUSETTS INST TECHNOLOGY·Filed 2014·Application pending·0 cites
- 2942US12494810B2System and method to reduce a mobile device user's radiation exposure and enhance battery lifeCONTECH RF DEVICES LLC·Filed 2021·Granted Dec 9, 2025·0 cites·37 claims
- 3042US12232864B2Systems and methods for estimating 3D position and movement from tactile signalsMASSACHUSETTS INST TECHNOLOGY·Filed 2021·Granted Feb 25, 2025·0 cites·9 claims
- 3138US10297456B2Dielectric structures for nitride semiconductor devicesMASSACHUSETTS INST TECHNOLOGY·Filed 2017·Granted May 21, 2019·0 cites·11 claims
- 3238US2017301772A1GaN DEVICES FABRICATED VIA WAFER BONDINGRADWAY ROBERT M·Filed 2017·Application pending·0 cites
- 3333US2015349064A1Nucleation and buffer layers for group iii-nitride based semiconductor devicesCAMBRIDGE ELECTRONICS INC·Filed 2015·Application pending·0 cites
- 3433US2015270356A1Vertical nitride semiconductor deviceMASSACHUSETTS INST TECHNOLOGY·Filed 2015·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →