Inventor · disambiguated record
Daniela Gambaro
Also filed as: GAMBARO DANIELA
13 granted patents·2 pending applications·362 citations·filing 1997–2013
94Inventor score
Technology areasH10P
Top patents by PatentIndex Score
15 records- 0194US5994761AIdeal oxygen precipitating silicon wafers and oxygen out-diffusion-less process thereforMEMC ELECTRONIC MATERIALS SPA·Filed 1997·Granted Nov 30, 1999·122 cites·67 claims
- 0289US6306733B1Ideal oxygen precipitating epitaxial silicon wafers and oxygen out-diffusion-less process thereforMEMC ELECTRONIC MATERIALS SPA·Filed 2000·Granted Oct 23, 2001·33 cites·25 claims
- 0388US6180220B1Ideal Oxygen precipitating silicon wafers and oxygen out-diffusion-less process thereforMEMC ELECTRONIC MATERIALS·Filed 1998·Granted Jan 30, 2001·59 cites·57 claims
- 0483US7442253B2Process for forming low defect density, ideal oxygen precipitating siliconMEMC ELECTRONIC MATERIALS·Filed 2007·Granted Oct 28, 2008·6 cites·18 claims
- 0583US6586068B1Ideal oxygen precipitating silicon wafer having an asymmetrical vacancy concentration profile and a process for the preparation thereofMEMC ELECTRONIC MATERIALS·Filed 2000·Granted Jul 1, 2003·19 cites·21 claims
- 0683US6204152B1Ideal oxygen precipitating silicon wafers and oxygen out-diffusion-less process thereforMEMC ELECTRONIC MATERIALS SPA·Filed 1999·Granted Mar 20, 2001·43 cites·54 claims
- 0782US6537368B2Ideal oxygen precipitating epitaxial silicon wafers and oxygen out-diffusion-less process thereforMEMC ELECTRONIC MATERIALS SPA·Filed 2001·Granted Mar 25, 2003·18 cites·18 claims
- 0879US6190631B1Low defect density, ideal oxygen precipitating siliconMEMC ELECTRONIC MATERIALS·Filed 1998·Granted Feb 20, 2001·40 cites·82 claims
- 0973US6896728B2Process for producing low defect density, ideal oxygen precipitating siliconMEMC ELECTRONIC MATERIALS·Filed 2003·Granted May 24, 2005·11 cites·76 claims
- 1070US7229693B2Low defect density, ideal oxygen precipitating siliconMEMC ELECTRONIC MATERIALS·Filed 2005·Granted Jun 12, 2007·2 cites·41 claims
- 1163US6849119B2Ideal oxygen precipitating silicon wafers and oxygen out-diffusion-less process thereforMEMC ELECTRONIC MATERIALS·Filed 2003·Granted Feb 1, 2005·5 cites·31 claims
- 1258US6555194B1Process for producing low defect density, ideal oxygen precipitating siliconMEMC ELECTRONIC MATERIALS·Filed 2000·Granted Apr 29, 2003·4 cites·20 claims
- 1344US2006075960A1Method for the preparation of a semiconductor substrate with a non-uniform distribution of stabilized oxygen precipitatesMEMC ELECTRONIC MATERIALS·Filed 2005·Application pending·0 cites
- 1443US9129919B2Production of high precipitate density wafers by activation of inactive oxygen precipitate nucleiSUNEDISON SEMICONDUCTOR LTD·Filed 2013·Granted Sep 8, 2015·0 cites·23 claims
- 1536US2002179006A1Method for the preparation of a semiconductor substrate with a non-uniform distribution of stabilized oxygen precipitatesMEMC ELECTRONIC MATERIALS·Filed 2002·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →