Inventor · disambiguated record
Seung-Chul Song
Also filed as: SONG SEUNG-CHUL
24 granted patents·8 pending applications·126 citations·filing 1999–2022
94Inventor score
Top patents by PatentIndex Score
32 records- 0194US7829951B2Method of fabricating a fin field effect transistor (FinFET) deviceQUALCOMM INC·Filed 2008·Granted Nov 9, 2010·45 cites·15 claims
- 0283US6542201B1Zooming apparatus and method in digital TVLG ELECTRONICS INC·Filed 2000·Granted Apr 1, 2003·27 cites·19 claims
- 0378US9875788B2Low-power 5T SRAM with improved stability and reduced bitcell sizeJUNG SEONG-OOK·Filed 2010·Granted Jan 23, 2018·8 cites·26 claims
- 0477US8796777B2Fin-type device system and methodSONG SEUNG-CHUL·Filed 2009·Granted Aug 5, 2014·10 cites·8 claims
- 0576US8447547B2Static noise margin estimationJUNG SEONG-OOK·Filed 2009·Granted May 21, 2013·11 cites·37 claims
- 0674US9093555B2Method of CMOS manufacturing utilizing multi-layer epitaxial hardmask films for improved EPI profileTEXAS INSTRUMENTS INC·Filed 2013·Granted Jul 28, 2015·3 cites·20 claims
- 0770US8691644B2Method of forming a CMOS device with a stressed-channel NMOS transistor and a strained-channel PMOS transistorSONG SEUNG-CHUL·Filed 2012·Granted Apr 8, 2014·3 cites·20 claims
- 0863US8236686B2Dual metal gates using one metal to alter work function of another metalLEE BYOUNG H·Filed 2008·Granted Aug 7, 2012·4 cites·14 claims
- 0963US8130534B2System and method to read and write data a magnetic tunnel junction elementABU-RAHMA MOHAMED HASSAN·Filed 2009·Granted Mar 6, 2012·6 cites·25 claims
- 1056US9768078B2Inner L-spacer for replacement gate flowTEXAS INSTRUMENTS INC·Filed 2016·Granted Sep 19, 2017·0 cites·16 claims
- 1156US9087917B2Inner L-spacer for replacement gate flowTEXAS INSTRUMENTS INC·Filed 2013·Granted Jul 21, 2015·0 cites·7 claims
- 1255US9362375B2Inner L-spacer for replacement gate flowTEXAS INSTRUMENTS INC·Filed 2015·Granted Jun 7, 2016·0 cites·6 claims
- 1354US9178037B2Inner L-spacer for replacement gate flowTEXAS INSTRUMENTS INC·Filed 2015·Granted Nov 3, 2015·0 cites·7 claims
- 1451US10879133B2Replacement metal gate process for CMOS integrated circuitsTEXAS INSTRUMENTS INC·Filed 2014·Granted Dec 29, 2020·0 cites·18 claims
- 1551US2014183663A1Raised Source/Drain MOS Transistor and Method of Forming the Transistor with an Implant Spacer and an Epitaxial SpacerTEXAS INSTRUMENTS INC·Filed 2012·Application pending·0 cites
- 1650US12508115B2Fixed band belt set for treating and caring for catSONG SEUNG CHUL·Filed 2022·Granted Dec 30, 2025·0 cites·1 claims
- 1748US9178038B2Raised source/drain MOS transistor and method of forming the transistor with an implant spacer and an epitaxial spacerTEXAS INSTRUMENTS INC·Filed 2015·Granted Nov 3, 2015·0 cites·3 claims
- 1847US9659825B2Method of CMOS manufacturing utilizing multi-layer epitaxial hardmask films for improved epi profileTEXAS INSTRUMENTS INC·Filed 2015·Granted May 23, 2017·0 cites·20 claims
- 1947US8803253B2Replacement metal gate process for CMOS integrated circuitsNIIMI HIROAKI·Filed 2012·Granted Aug 12, 2014·0 cites·8 claims
- 2047US7026662B2Semiconductor device having a photon absorption layer to prevent plasma damageSAMSUNG ELECTRONICS CO LTD·Filed 2003·Granted Apr 11, 2006·1 cites·12 claims
- 2146US9337100B2Apparatus and method to fabricate an electronic deviceSONG SEUNG-CHUL·Filed 2009·Granted May 10, 2016·0 cites·15 claims
- 2245US2005060749A1Digital cable receiverLG ELECTRONICS INC·Filed 2004·Application pending·0 cites
- 2342US9224656B2Method of CMOS manufacturing utilizing multi-layer epitaxial hardmask films for improved gate spacer controlTEXAS INSTRUMENTS INC·Filed 2013·Granted Dec 29, 2015·0 cites·19 claims
- 2442US2006145183A1Method of manufacturing a semiconductor device having a photon absorption layer to prevent plasma damageSAMSUNG ELECTRONICS CO LTD·Filed 2006·Application pending·0 cites
- 2541US6501508B1Video format converter for digital receiving systemLG ELECTRONICS INC·Filed 1999·Granted Dec 31, 2002·8 cites·20 claims
- 2639US7741168B2Systems and methods for fabricating nanometric-scale semiconductor devices with dual-stress layers using double-stress oxide/nitride stacksSEMATECH INC·Filed 2007·Granted Jun 22, 2010·0 cites·19 claims
- 2738US2007059874A1Dual Metal Gate and Method of ManufactureSEMATECH INC·Filed 2006·Application pending·0 cites
- 2838US2012256270A1Dual metal gates using one metal to alter work function of another metalLEE BYOUNG H·Filed 2012·Application pending·0 cites
- 2937US2006270224A1Methods for forming metal-silicon layer using a silicon cap layerSONG SEUNG-CHUL·Filed 2006·Application pending·0 cites
- 3034US2016172443A1Method and apparatus to tune threshold voltage of device with high angle source/drain implantsTEXAS INSTRUMENTS INC·Filed 2015·Application pending·0 cites
- 3134US2007048920A1Methods for dual metal gate CMOS integrationSEMATECH SARL·Filed 2005·Application pending·0 cites
- 3232US9865330B2Stable SRAM bitcell design utilizing independent gate FinFETJUNG SEONG-OOK·Filed 2010·Granted Jan 9, 2018·0 cites·32 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →