Inventor · disambiguated record
Bayard K. Johnson
Also filed as: JOHNSON BAYARD K
16 granted patents·5 pending applications·363 citations·filing 1998–2018
95Inventor score
Top patents by PatentIndex Score
21 records- 0195US5919302ALow defect density vacancy dominated siliconMEMC ELECTRONIC MATERIALS·Filed 1998·Granted Jul 6, 1999·139 cites·40 claims
- 0290US6254672B1Low defect density self-interstitial dominated siliconMEMC ELECTRONIC MATERIALS·Filed 1998·Granted Jul 3, 2001·64 cites·20 claims
- 0387US9051659B2Silicon single crystal doped with gallium, indium, or aluminumDELUCA JOHN P·Filed 2011·Granted Jun 9, 2015·9 cites·23 claims
- 0483US7442253B2Process for forming low defect density, ideal oxygen precipitating siliconMEMC ELECTRONIC MATERIALS·Filed 2007·Granted Oct 28, 2008·6 cites·18 claims
- 0583US6632278B2Low defect density epitaxial wafer and a process for the preparation thereofMEMC ELECTRONIC MATERIALS·Filed 2002·Granted Oct 14, 2003·16 cites·11 claims
- 0683US6409826B2Low defect density, self-interstitial dominated siliconMEMC ELECTRONIC MATERIALS·Filed 2001·Granted Jun 25, 2002·17 cites·27 claims
- 0779US6190631B1Low defect density, ideal oxygen precipitating siliconMEMC ELECTRONIC MATERIALS·Filed 1998·Granted Feb 20, 2001·40 cites·82 claims
- 0873US6896728B2Process for producing low defect density, ideal oxygen precipitating siliconMEMC ELECTRONIC MATERIALS·Filed 2003·Granted May 24, 2005·11 cites·76 claims
- 0971US6315828B1Continuous oxidation process for crystal pulling apparatusMEMC ELECTRONIC MATERIALS·Filed 2000·Granted Nov 13, 2001·13 cites·23 claims
- 1070US7229693B2Low defect density, ideal oxygen precipitating siliconMEMC ELECTRONIC MATERIALS·Filed 2005·Granted Jun 12, 2007·2 cites·41 claims
- 1166US6840997B2Vacancy, dominsated, defect-free siliconMEMC ELECTRONIC MATERIALS·Filed 2001·Granted Jan 11, 2005·7 cites·13 claims
- 1265US6379642B1Vacancy dominated, defect-free siliconMEMC ELECTRONIC MATERIALS·Filed 1999·Granted Apr 30, 2002·21 cites·27 claims
- 1358US6555194B1Process for producing low defect density, ideal oxygen precipitating siliconMEMC ELECTRONIC MATERIALS·Filed 2000·Granted Apr 29, 2003·4 cites·20 claims
- 1456US6039801AContinuous oxidation process for crystal pulling apparatusMEMC ELECTRONIC MATERIALS·Filed 1998·Granted Mar 21, 2000·14 cites·26 claims
- 1551US2005238905A1Vacancy-dominated, defect-free siliconMEMC ELECTRONIC MATERIALS·Filed 2005·Application pending·0 cites
- 1648US2019203378A1Methods for Removing a Melt of Silicon from a Crucible and Related Wick AssembliesCORNER STAR LTD·Filed 2018·Application pending·0 cites
- 1745US10544517B2Growth of a uniformly doped silicon ingot by doping only the initial chargeJOHNSON BAYARD K·Filed 2012·Granted Jan 28, 2020·0 cites·3 claims
- 1845US10202705B2Silicon ingot having uniform multiple dopants and method and apparatus for producing sameJOHNSON BAYARD K·Filed 2012·Granted Feb 12, 2019·0 cites·10 claims
- 1945US2004089224A1Process for producing low defect density siliconMEMC ELECTRONIC MATERIALS·Filed 2003·Application pending·0 cites
- 2042US2003051657A1Vacancy, dominated, defect-free siliconMEMC ELECTRONIC MATERIALS·Filed 2002·Application pending·0 cites
- 2139US2003196587A1Process for suppressing the nucleation and/or growth of interstitial type defects by controlling the cooling rate through nucleationMEMC ELECTRONIC MATERIALS·Filed 2003·Application pending·0 cites
Join the waitlist — get patent alerts
Get an alert when Bayard K. Johnson files or is granted a new patent.
We store only your email — no account needed. See our privacy policy.
Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →