Inventor · disambiguated record
Paolo Mutti
Also filed as: MUTTI PAOLO
17 granted patents·5 pending applications·379 citations·filing 1998–2008
95Inventor score
Files withMEMC ELECTRONIC MATERIALS22
Top patents by PatentIndex Score
22 records- 0195US5919302ALow defect density vacancy dominated siliconMEMC ELECTRONIC MATERIALS·Filed 1998·Granted Jul 6, 1999·139 cites·40 claims
- 0290US6254672B1Low defect density self-interstitial dominated siliconMEMC ELECTRONIC MATERIALS·Filed 1998·Granted Jul 3, 2001·64 cites·20 claims
- 0383US7442253B2Process for forming low defect density, ideal oxygen precipitating siliconMEMC ELECTRONIC MATERIALS·Filed 2007·Granted Oct 28, 2008·6 cites·18 claims
- 0483US6632278B2Low defect density epitaxial wafer and a process for the preparation thereofMEMC ELECTRONIC MATERIALS·Filed 2002·Granted Oct 14, 2003·16 cites·11 claims
- 0583US6409826B2Low defect density, self-interstitial dominated siliconMEMC ELECTRONIC MATERIALS·Filed 2001·Granted Jun 25, 2002·17 cites·27 claims
- 0679US6190631B1Low defect density, ideal oxygen precipitating siliconMEMC ELECTRONIC MATERIALS·Filed 1998·Granted Feb 20, 2001·40 cites·82 claims
- 0777US6312516B2Process for preparing defect free silicon crystals which allows for variability in process conditionsMEMC ELECTRONIC MATERIALS·Filed 1999·Granted Nov 6, 2001·25 cites·33 claims
- 0875US6726764B2Method for controlling growth of a silicon crystal to minimize growth rate and diameter deviationsMEMC ELECTRONIC MATERIALS·Filed 2001·Granted Apr 27, 2004·19 cites·32 claims
- 0973US6896728B2Process for producing low defect density, ideal oxygen precipitating siliconMEMC ELECTRONIC MATERIALS·Filed 2003·Granted May 24, 2005·11 cites·76 claims
- 1070US7229693B2Low defect density, ideal oxygen precipitating siliconMEMC ELECTRONIC MATERIALS·Filed 2005·Granted Jun 12, 2007·2 cites·41 claims
- 1168US6500255B2Process for growing silicon crystals which allows for variability in the process conditions while suppressing the formation of agglomerated intrinsic point defectsMEMC ELECTRONIC MATERIALS·Filed 2001·Granted Dec 31, 2002·5 cites·42 claims
- 1266US6840997B2Vacancy, dominsated, defect-free siliconMEMC ELECTRONIC MATERIALS·Filed 2001·Granted Jan 11, 2005·7 cites·13 claims
- 1365US6379642B1Vacancy dominated, defect-free siliconMEMC ELECTRONIC MATERIALS·Filed 1999·Granted Apr 30, 2002·21 cites·27 claims
- 1459US2009022930A1Single crystal silicon having improved gate oxide integrityMEMC ELECTRONIC MATERIALS·Filed 2008·Application pending·0 cites
- 1558US6986925B2Single crystal silicon having improved gate oxide integrityMEMC ELECTRONIC MATERIALS·Filed 2002·Granted Jan 17, 2006·3 cites·27 claims
- 1658US6555194B1Process for producing low defect density, ideal oxygen precipitating siliconMEMC ELECTRONIC MATERIALS·Filed 2000·Granted Apr 29, 2003·4 cites·20 claims
- 1754US7431765B2Process for preparing single crystal silicon having improved gate oxide integrityMEMC ELECTRONIC MATERIALS·Filed 2005·Granted Oct 7, 2008·0 cites·22 claims
- 1851US2005238905A1Vacancy-dominated, defect-free siliconMEMC ELECTRONIC MATERIALS·Filed 2005·Application pending·0 cites
- 1946US6652646B2Process for growing a silicon crystal segment substantially free from agglomerated intrinsic point defects which allows for variability in the process conditionsMEMC ELECTRONIC MATERIALS·Filed 2002·Granted Nov 25, 2003·0 cites·24 claims
- 2045US2004089224A1Process for producing low defect density siliconMEMC ELECTRONIC MATERIALS·Filed 2003·Application pending·0 cites
- 2142US2003051657A1Vacancy, dominated, defect-free siliconMEMC ELECTRONIC MATERIALS·Filed 2002·Application pending·0 cites
- 2239US2003196587A1Process for suppressing the nucleation and/or growth of interstitial type defects by controlling the cooling rate through nucleationMEMC ELECTRONIC MATERIALS·Filed 2003·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →