Inventor · disambiguated record
Joseph C. Holzer
Also filed as: HOLZER JOSEPH · HOLZER JOSEPH C · HOLZER JOSEPH CONRAD
30 granted patents·10 pending applications·852 citations·filing 1980–2018
98Inventor score
Files withMEMC ELECTRONIC MATERIALS29CORNER STAR LTD4JOANNA WESTERN MILLS CO3EASTMAN KODAK CO2GAYLORD BROS INC1
Top patents by PatentIndex Score
40 records- 0197US4363459AAdjustable wall mounted bracketJOANNA WESTERN MILLS CO·Filed 1980·Granted Dec 14, 1982·106 cites·8 claims
- 0295US5919302ALow defect density vacancy dominated siliconMEMC ELECTRONIC MATERIALS·Filed 1998·Granted Jul 6, 1999·139 cites·40 claims
- 0391US6409827B2Low defect density silicon and a process for producing low defect density silicon wherein V/G0 is controlled by controlling heat transfer at the melt/solid interfaceMEMC ELECTRONIC MATERIALS·Filed 2001·Granted Jun 25, 2002·30 cites·32 claims
- 0490US6287380B1Low defect density siliconMEMC ELECTRONIC MATERIALS·Filed 1998·Granted Sep 11, 2001·59 cites·21 claims
- 0590US6254672B1Low defect density self-interstitial dominated siliconMEMC ELECTRONIC MATERIALS·Filed 1998·Granted Jul 3, 2001·64 cites·20 claims
- 0688US5779791AProcess for controlling thermal history of Czochralski-grown siliconMEMC ELECTRONIC MATERIALS·Filed 1996·Granted Jul 14, 1998·67 cites·51 claims
- 0787US4990248AReverse osmosis apparatusEASTMAN KODAK CO·Filed 1988·Granted Feb 5, 1991·72 cites·8 claims
- 0885US4767531ARetractor for permeator or filter moduleEASTMAN KODAK CO·Filed 1987·Granted Aug 30, 1988·50 cites·6 claims
- 0983US7442253B2Process for forming low defect density, ideal oxygen precipitating siliconMEMC ELECTRONIC MATERIALS·Filed 2007·Granted Oct 28, 2008·6 cites·18 claims
- 1083US6632278B2Low defect density epitaxial wafer and a process for the preparation thereofMEMC ELECTRONIC MATERIALS·Filed 2002·Granted Oct 14, 2003·16 cites·11 claims
- 1183US6409826B2Low defect density, self-interstitial dominated siliconMEMC ELECTRONIC MATERIALS·Filed 2001·Granted Jun 25, 2002·17 cites·27 claims
- 1279US6605150B2Low defect density regions of self-interstitial dominated siliconMEMC ELECTRONIC MATERIALS·Filed 2002·Granted Aug 12, 2003·11 cites·41 claims
- 1379US6190631B1Low defect density, ideal oxygen precipitating siliconMEMC ELECTRONIC MATERIALS·Filed 1998·Granted Feb 20, 2001·40 cites·82 claims
- 1478US6284039B1Epitaxial silicon wafers substantially free of grown-in defectsMEMC ELECTRONIC MATERIALS·Filed 1999·Granted Sep 4, 2001·27 cites·35 claims
- 1573US6896728B2Process for producing low defect density, ideal oxygen precipitating siliconMEMC ELECTRONIC MATERIALS·Filed 2003·Granted May 24, 2005·11 cites·76 claims
- 1671US4356855AVane holding assemblyJOANNA WESTERN MILLS CO·Filed 1981·Granted Nov 2, 1982·28 cites·6 claims
- 1770US7229693B2Low defect density, ideal oxygen precipitating siliconMEMC ELECTRONIC MATERIALS·Filed 2005·Granted Jun 12, 2007·2 cites·41 claims
- 1870US4564411AApparatus for producing labelsGAYLORD BROS INC·Filed 1983·Granted Jan 14, 1986·23 cites·39 claims
- 1966US6840997B2Vacancy, dominsated, defect-free siliconMEMC ELECTRONIC MATERIALS·Filed 2001·Granted Jan 11, 2005·7 cites·13 claims
- 2066US6565649B2Epitaxial wafer substantially free of grown-in defectsMEMC ELECTRONIC MATERIALS·Filed 2001·Granted May 20, 2003·9 cites·26 claims
- 2165US6635587B1Method for producing czochralski silicon free of agglomerated self-interstitial defectsMEMC ELECTRONIC MATERIALS·Filed 2000·Granted Oct 21, 2003·6 cites·55 claims
- 2265US6379642B1Vacancy dominated, defect-free siliconMEMC ELECTRONIC MATERIALS·Filed 1999·Granted Apr 30, 2002·21 cites·27 claims
- 2358US6555194B1Process for producing low defect density, ideal oxygen precipitating siliconMEMC ELECTRONIC MATERIALS·Filed 2000·Granted Apr 29, 2003·4 cites·20 claims
- 2457US7097718B2Single crystal silicon wafer having an epitaxial layer substantially free from grown-in defectsMEMC ELECTRONIC MATERIALS·Filed 2003·Granted Aug 29, 2006·5 cites·22 claims
- 2555US10337118B2Apparatus and method for doping a semiconductor melt comprising a seed chuck, a seed crystal connected to the seed chuck, and a dopant container connected to the seed chuck between a first and second end of the apparatusCORNER STAR LTD·Filed 2015·Granted Jul 2, 2019·0 cites·21 claims
- 2655US4366852ACord weight assemblyJOANNA WESTERN MILLS CO·Filed 1980·Granted Jan 4, 1983·18 cites·1 claims
- 2754US2005205000A1Low defect density siliconMEMC ELECTRONIC MATERIALS·Filed 2005·Application pending·0 cites
- 2852US2019203377A1Synthetic lined crucible assembly for czochralski crystal growthCORNER STAR LTD·Filed 2018·Application pending·0 cites
- 2951US7573587B1Method and device for continuously measuring silicon island elevationMEMC ELECTRONIC MATERIALS·Filed 2008·Granted Aug 11, 2009·1 cites·13 claims
- 3051US2019078231A1Hybrid crucible assembly for czochralski crystal growthCORNER STAR LTD·Filed 2018·Application pending·0 cites
- 3151US2005238905A1Vacancy-dominated, defect-free siliconMEMC ELECTRONIC MATERIALS·Filed 2005·Application pending·0 cites
- 3249US8398765B2Controlling a melt-solid interface shape of a growing silicon crystal using an unbalanced magnetic field and iso-rotationSREEDHARAMURTHY HARIPRASAD·Filed 2009·Granted Mar 19, 2013·0 cites·19 claims
- 3348US2019203378A1Methods for Removing a Melt of Silicon from a Crucible and Related Wick AssembliesCORNER STAR LTD·Filed 2018·Application pending·0 cites
- 3445US2004089224A1Process for producing low defect density siliconMEMC ELECTRONIC MATERIALS·Filed 2003·Application pending·0 cites
- 3545US2004070012A1Low defect density siliconMEMC ELECTRONIC MATERIALS·Filed 2003·Application pending·0 cites
- 3642US5550374AMethods and apparatus for determining interstitial oxygen content of relatively large diameter silicon crystals by infrared spectroscopyMEMC ELECTRONIC MATERIALS·Filed 1994·Granted Aug 27, 1996·10 cites·12 claims
- 3742US2003051657A1Vacancy, dominated, defect-free siliconMEMC ELECTRONIC MATERIALS·Filed 2002·Application pending·0 cites
- 3841US2006005761A1Method and apparatus for growing silicon crystal by controlling melt-solid interface shape as a function of axial lengthMEMC ELECTRONIC MATERIALS·Filed 2005·Application pending·0 cites
- 3939US2003196587A1Process for suppressing the nucleation and/or growth of interstitial type defects by controlling the cooling rate through nucleationMEMC ELECTRONIC MATERIALS·Filed 2003·Application pending·0 cites
- 4028US5573680AMethod for etching a semiconductor material without altering flow pattern defect distributionMEMC ELECTRONIC MATERIALS·Filed 1994·Granted Nov 12, 1996·3 cites·6 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →