Inventor · disambiguated record

Tsung-Hsi Yang

Also filed as: YANG TSUNG-HSI

23 granted patents·6 pending applications·55 citations·filing 2003–2025

93Inventor score

Technology areasH10D H10P H01L H10H H02M

Files withTAIWAN SEMICONDUCTOR MFG CO LTD18 UNIV NAT CHIAO TUNG4 RICHTEK TECHNOLOGY CORP2 HIMAX DISPLAY INC1 LUO GUANGLI1

Top patents by PatentIndex Score

29 records

0196US11948971B2Confined source/drain epitaxy regions and method forming sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Apr 2, 2024·3 cites·20 claims
0296US11581425B2Method for manufacturing semiconductor structure with enlarged volumes of source-drain regionsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Feb 14, 2023·3 cites·20 claims
0395US10269655B1Semiconductor device and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Apr 23, 2019·12 cites·20 claims
0492US11101347B2Confined source/drain epitaxy regions and method forming sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Aug 24, 2021·6 cites·20 claims
0592US10515858B1Semiconductor device and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Dec 24, 2019·5 cites·20 claims
0684US11315837B2Semiconductor device and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Apr 26, 2022·1 cites·20 claims
0781US2025301735A1Transistors with stacked semiconductor layers as channelsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
0880US2025344461A1Confined source/drain epitaxy regions and method forming sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
0976US10879128B2Semiconductor device and method of forming sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Dec 29, 2020·2 cites·20 claims
1076US2024355826A1Epitaxy regions with large landing areas for contact plugsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
1175US12439657B2Confined source/drain epitaxy regions and method forming sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted Oct 7, 2025·0 cites·20 claims
1274US12057450B2Epitaxy regions with large landing areas for contact plugsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Aug 6, 2024·0 cites·20 claims
1373US12389649B2Transistors with stacked semiconductor layers as channelsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Aug 12, 2025·0 cites·20 claims
1467US11652105B2Epitaxy regions with large landing areas for contact plugsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted May 16, 2023·0 cites·20 claims
1564US10770359B2Semiconductor device and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Sep 8, 2020·0 cites·20 claims
1663US11257908B2Transistors with stacked semiconductor layers as channelsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Feb 22, 2022·0 cites·20 claims
1763US7259084B2Growth of GaAs epitaxial layers on Si substrate by using a novel GeSi buffer layerUNIV NAT CHIAO TUNG·Filed 2003·Granted Aug 21, 2007·9 cites·13 claims
1861US11569084B2Method for manufacturing semiconductor structure with reduced nodule defectsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Jan 31, 2023·0 cites·20 claims
1961US7977687B2Light emitter deviceUNIV NAT CHIAO TUNG·Filed 2008·Granted Jul 12, 2011·1 cites·16 claims
2060US9024607B2Control circuit for power converter and method thereofRICHTEK TECHNOLOGY CORP·Filed 2013·Granted May 5, 2015·1 cites·10 claims
2158US8698472B2Adjustable driver voltage source for a switching power supply and method for adjusting driver voltage in a switching power supplyYANG TSUNG-HSI·Filed 2011·Granted Apr 15, 2014·3 cites·6 claims
2255US7071087B2Technique to grow high quality ZnSe epitaxy layer on Si substrateWITTY MATE CORP·Filed 2004·Granted Jul 4, 2006·9 cites·26 claims
2350US7888152B2Method of forming laterally distributed LEDsHIMAX DISPLAY INC·Filed 2009·Granted Feb 15, 2011·0 cites·20 claims
2449US2007134901A1Growth of GaAs expitaxial layers on Si substrate by using a novel GeSi buffer layerUNIV NAT CHIAO TUNG·Filed 2007·Application pending·0 cites
2547US12316552B2Data bandwidth management method and deviceMEDIATEK INC·Filed 2022·Granted May 27, 2025·0 cites·10 claims
2646US9173264B2LED control device for phase-cut dimming system and control method thereofRICHTEK TECHNOLOGY CORP·Filed 2013·Granted Oct 27, 2015·0 cites·12 claims
2746US2009098714A1Method for forming III-nitrides semiconductor epilayer on the semiconductor substrateUNIV NAT CHIAO TUNG·Filed 2008·Application pending·0 cites
2843US10002780B2Method of manufacturing a semiconductor structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Jun 19, 2018·0 cites·19 claims
2935US2007205444A1Architecture of a n-type metal-oxide-semiconductor transistor with a compressive strained silicon-germanium channel fabricated on a silicon (110) substrateLUO GUANGLI·Filed 2006·Application pending·0 cites

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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →