Inventor · disambiguated record
Nigel G. Cave
Also filed as: CAVE NIGEL · CAVE NIGEL G · CAVE NIGEL GRAEME
32 granted patents·3 pending applications·585 citations·filing 1998–2024
97Inventor score
Top patents by PatentIndex Score
35 records- 0199US10026824B1Air-gap gate sidewall spacer and methodGLOBALFOUNDRIES INC·Filed 2017·Granted Jul 17, 2018·53 cites·17 claims
- 0298US9929157B1Tall single-fin fin-type field effect transistor structures and methodsGLOBALFOUNDRIES INC·Filed 2016·Granted Mar 27, 2018·37 cites·13 claims
- 0397US10236218B1Methods, apparatus and system for forming wrap-around contact with dual silicideGLOBALFOUNDRIES INC·Filed 2018·Granted Mar 19, 2019·19 cites·15 claims
- 0493US6037668AIntegrated circuit having a support structureMOTOROLA INC·Filed 1998·Granted Mar 14, 2000·136 cites·19 claims
- 0592US9947589B1Methods of forming a gate contact for a transistor above an active region and the resulting deviceGLOBALFOUNDRIES INC·Filed 2017·Granted Apr 17, 2018·8 cites·19 claims
- 0690US10381459B2Transistors with H-shaped or U-shaped channels and method for forming the sameGLOBALFOUNDRIES INC·Filed 2018·Granted Aug 13, 2019·6 cites·11 claims
- 0789US10290549B2Integrated circuit structure, gate all-around integrated circuit structure and methods of forming sameGLOBALFOUNDRIES INC·Filed 2017·Granted May 14, 2019·6 cites·7 claims
- 0888US6313024B1Method for forming a semiconductor deviceMOTOROLA INC·Filed 1999·Granted Nov 6, 2001·81 cites·20 claims
- 0984US10249728B2Air-gap gate sidewall spacer and methodGLOBALFOUNDRIES INC·Filed 2018·Granted Apr 2, 2019·3 cites·18 claims
- 1084US6475841B1Transistor with shaped gate electrode and method thereforMOTOROLA INC·Filed 2000·Granted Nov 5, 2002·32 cites·16 claims
- 1183US10204994B2Methods of forming a semiconductor device with a gate contact positioned above the active regionGLOBALFOUNDRIES INC·Filed 2017·Granted Feb 12, 2019·4 cites·18 claims
- 1282US9978608B2Fin patterning for a fin-type field-effect transistorGLOBALFOUNDRIES INC·Filed 2016·Granted May 22, 2018·3 cites·17 claims
- 1380US6127258AMethod for forming a semiconductor deviceMOTOROLA INC·Filed 1998·Granted Oct 3, 2000·55 cites·20 claims
- 1478US10734525B2Gate-all-around transistor with spacer support and methods of forming sameGLOBALFOUNDRIES INC·Filed 2018·Granted Aug 4, 2020·2 cites·14 claims
- 1576US6924184B2Semiconductor device and method for forming a semiconductor device using post gate stack planarizationFREESCALE SEMICONDUCTOR INC·Filed 2003·Granted Aug 2, 2005·27 cites·24 claims
- 1674US10211100B2Methods of forming an air gap adjacent a gate of a transistor and a gate contact above the active region of the transistorGLOBALFOUNDRIES INC·Filed 2017·Granted Feb 19, 2019·2 cites·20 claims
- 1774US7470624B2Integrated assist features for epitaxial growth bulk/SOI hybrid tiles with compensationFREESCALE SEMICONDUCTOR INC·Filed 2007·Granted Dec 30, 2008·4 cites·20 claims
- 1872US10411010B2Tall single-fin FIN-type field effect transistor structures and methodsGLOBALFOUNDRIES INC·Filed 2018·Granted Sep 10, 2019·1 cites·20 claims
- 1971US7109051B2Method of integrating optical devices and electronic devices on an integrated circuitFREESCALE SEMICONDUCTOR INC·Filed 2004·Granted Sep 19, 2006·20 cites·37 claims
- 2070US10468300B2Contacting source and drain of a transistor deviceGLOBALFOUNDRIES INC·Filed 2017·Granted Nov 5, 2019·1 cites·8 claims
- 2169US7262105B2Semiconductor device with silicided source/drainsFREESCALE SEMICONDUCTOR INC·Filed 2003·Granted Aug 28, 2007·13 cites·25 claims
- 2269US6232235B1Method of forming a semiconductor deviceMOTOROLA INC·Filed 1998·Granted May 15, 2001·31 cites·21 claims
- 2368US6372665B1Method for forming a semiconductor deviceMOTOROLA INC·Filed 2000·Granted Apr 16, 2002·13 cites·21 claims
- 2467US6566264B1Method for forming an opening in a semiconductor device substrateMOTOROLA INC·Filed 2000·Granted May 20, 2003·10 cites·15 claims
- 2561US7144784B2Method of forming a semiconductor device and structure thereofFREESCALE SEMICONDUCTOR INC·Filed 2004·Granted Dec 5, 2006·9 cites·21 claims
- 2660US7067342B2Method of integrating optical devices and electronic devices on an integrated circuitFREESCALE SEMICONDUCTOR INC·Filed 2004·Granted Jun 27, 2006·9 cites·67 claims
- 2759US2025294837A1Structures including an isotopically-depleted semiconductor layerGLOBALFOUNDRIES US INC·Filed 2024·Application pending·0 cites
- 2847US7565639B2Integrated assist features for epitaxial growth bulk tiles with compensationFREESCALE SEMICONDUCTOR INC·Filed 2007·Granted Jul 21, 2009·0 cites·20 claims
- 2946US11024536B2Contact interlayer dielectric replacement with improved SAC cap retentionIBM·Filed 2019·Granted Jun 1, 2021·0 cites·14 claims
- 3044US11101348B2Nanosheet field effect transistor with spacers between sheetsGLOBALFOUNDRIES US INC·Filed 2018·Granted Aug 24, 2021·0 cites·15 claims
- 3143US10504790B2Methods of forming conductive spacers for gate contacts and the resulting deviceGLOBALFOUNDRIES INC·Filed 2017·Granted Dec 10, 2019·0 cites·19 claims
- 3241US8741743B2Integrated assist features for epitaxial growthZIA OMAR·Filed 2007·Granted Jun 3, 2014·0 cites·19 claims
- 3340US2019139830A1Self-aligned gate isolationGLOBALFOUNDRIES INC·Filed 2017·Application pending·0 cites
- 3439US10249535B2Forming TS cut for zero or negative TS extension and resulting deviceGLOBALFOUNDRIES INC·Filed 2017·Granted Apr 2, 2019·0 cites·15 claims
- 3538US2019081145A1Contact to source/drain regions and method of forming sameGLOBALFOUNDRIES INC·Filed 2017·Application pending·0 cites
Join the waitlist — get patent alerts
Get an alert when Nigel G. Cave files or is granted a new patent.
We store only your email — no account needed. See our privacy policy.
Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →