Inventor · disambiguated record
Becky Losee
Also filed as: LOSEE BECKY
12 granted patents·3 pending applications·456 citations·filing 2001–2014
94Inventor score
Files withFAIRCHILD SEMICONDUCTOR8CHALLA ASHOK2KOCON CHRISTOPHER BOGUSLAW2GREBS THOMAS E1HERRICK ROBERT1
Top patents by PatentIndex Score
15 records- 0198US7344943B2Method for forming a trench MOSFET having self-aligned featuresFAIRCHILD SEMICONDUCTOR·Filed 2005·Granted Mar 18, 2008·58 cites·11 claims
- 0297US8143124B2Methods of making power semiconductor devices with thick bottom oxide layerCHALLA ASHOK·Filed 2008·Granted Mar 27, 2012·148 cites·6 claims
- 0396US6916745B2Structure and method for forming a trench MOSFET having self-aligned featuresFAIRCHILD SEMICONDUCTOR·Filed 2003·Granted Jul 12, 2005·90 cites·23 claims
- 0495US7595524B2Power device with trenches having wider upper portion than lower portionFAIRCHILD SEMICONDUCTOR·Filed 2008·Granted Sep 29, 2009·22 cites·31 claims
- 0593US8143123B2Methods of forming inter-poly dielectric (IPD) layers in power semiconductor devicesGREBS THOMAS E·Filed 2008·Granted Mar 27, 2012·15 cites·19 claims
- 0692US8680611B2Field effect transistor and schottky diode structuresKOCON CHRISTOPHER BOGUSLAW·Filed 2012·Granted Mar 25, 2014·9 cites·25 claims
- 0792US7078296B2Self-aligned trench MOSFETs and methods for making the sameFAIRCHILD SEMICONDUCTOR·Filed 2002·Granted Jul 18, 2006·69 cites·24 claims
- 0890US8936985B2Methods related to power semiconductor devices with thick bottom oxide layersCHALLA ASHOK·Filed 2012·Granted Jan 20, 2015·6 cites·12 claims
- 0988US7799636B2Power device with trenches having wider upper portion than lower portionFAIRCHILD SEMICONDUCTOR·Filed 2009·Granted Sep 21, 2010·8 cites·12 claims
- 1084US8034682B2Power device with trenches having wider upper portion than lower portionFAIRCHILD SEMICONDUCTOR·Filed 2010·Granted Oct 11, 2011·4 cites·18 claims
- 1181US6498108B2Method for removing surface contamination on semiconductor substratesFAIRCHILD SEMICONDUCTOR·Filed 2001·Granted Dec 24, 2002·26 cites·8 claims
- 1265US8716783B2Power device with self-aligned source regionsHERRICK ROBERT·Filed 2011·Granted May 6, 2014·1 cites·20 claims
- 1359US2014203355A1Field effect transistor and schottky diode structuresFAIRCHILD SEMICONDUCTOR·Filed 2014·Application pending·0 cites
- 1454US2012156845A1Method of forming a field effect transistor and schottky diodeKOCON CHRISTOPHER BOGUSLAW·Filed 2011·Application pending·0 cites
- 1535US2002192969A1Method for etching silicon trenchesFiled 2001·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →