Inventor · disambiguated record
Kenny King-Tai Ngan
Also filed as: NGAN KENNY K · NGAN KENNY K-T · NGAN KENNY KING-TAI
45 granted patents·8 pending applications·2,388 citations·filing 1991–2005
99Inventor score
Files withAPPLIED MATERIALS INC51
Top patents by PatentIndex Score
53 records- 0196US6945857B1Polishing pad conditioner and methods of manufacture and recyclingAPPLIED MATERIALS INC·Filed 2004·Granted Sep 20, 2005·111 cites·20 claims
- 0296US6110836AReactive plasma etch cleaning of high aspect ratio openingsAPPLIED MATERIALS INC·Filed 1999·Granted Aug 29, 2000·257 cites·17 claims
- 0396US6051114AUse of pulsed-DC wafer bias for filling vias/trenches with metal in HDP physical vapor depositionAPPLIED MATERIALS INC·Filed 1997·Granted Apr 18, 2000·304 cites·20 claims
- 0494US7066795B2Polishing pad conditioner with shaped abrasive patterns and channelsAPPLIED MATERIALS INC·Filed 2004·Granted Jun 27, 2006·87 cites·25 claims
- 0594US5746460AEnd effector for semiconductor wafer transfer device and method of moving a wafer with an end effectorAPPLIED MATERIALS INC·Filed 1995·Granted May 5, 1998·164 cites·9 claims
- 0693US7041200B2Reducing particle generation during sputter depositionAPPLIED MATERIALS INC·Filed 2002·Granted May 9, 2006·45 cites·28 claims
- 0792US5707498AAvoiding contamination from induction coil in ionized sputteringAPPLIED MATERIALS INC·Filed 1996·Granted Jan 13, 1998·79 cites·13 claims
- 0891US5242860AMethod for the formation of tin barrier layer with preferential (111) crystallographic orientationAPPLIED MATERIALS INC·Filed 1991·Granted Sep 7, 1993·91 cites·17 claims
- 0989US6149784ASputtering chamber shield promoting reliable plasma ignitionAPPLIED MATERIALS INC·Filed 1999·Granted Nov 21, 2000·66 cites·25 claims
- 1089US5378660ABarrier layers and aluminum contactsAPPLIED MATERIALS INC·Filed 1993·Granted Jan 3, 1995·98 cites·16 claims
- 1188US7504008B2Refurbishment of sputtering targetsAPPLIED MATERIALS INC·Filed 2004·Granted Mar 17, 2009·33 cites·34 claims
- 1288US6672864B2Method and apparatus for processing substrates in a system having high and low pressure areasAPPLIED MATERIALS INC·Filed 2002·Granted Jan 6, 2004·36 cites·20 claims
- 1388US6267423B1End effector for semiconductor wafer transfer device and method of moving a wafer with an end effectorAPPLIED MATERIALS INC·Filed 2000·Granted Jul 31, 2001·40 cites·15 claims
- 1487US6045666AAluminum hole filling method using ionized metal adhesion layerAPPLIED MATERIALS INC·Filed 1997·Granted Apr 4, 2000·61 cites·31 claims
- 1587US5961793AMethod of reducing generation of particulate matter in a sputtering chamberAPPLIED MATERIALS INC·Filed 1996·Granted Oct 5, 1999·49 cites·24 claims
- 1686US6589890B2Precleaning process for metal plug that minimizes damage to low-κ dielectricAPPLIED MATERIALS INC·Filed 2002·Granted Jul 8, 2003·32 cites·16 claims
- 1784US6346489B1Precleaning process for metal plug that minimizes damage to low-κ dielectricAPPLIED MATERIALS INC·Filed 1999·Granted Feb 12, 2002·61 cites·33 claims
- 1883US6420260B1Ti/Tinx underlayer which enables a highly <111> oriented aluminum interconnectAPPLIED MATERIALS INC·Filed 2000·Granted Jul 16, 2002·34 cites·8 claims
- 1980US5925225AMethod of producing smooth titanium nitride films having low resistivityAPPLIED MATERIALS INC·Filed 1997·Granted Jul 20, 1999·41 cites·10 claims
- 2078US5759360AWafer clean sputtering processAPPLIED MATERIALS INC·Filed 1995·Granted Jun 2, 1998·51 cites·4 claims
- 2178US5521120AMethod for the formation of tin barrier layer with preferential (111) crystallographic orientationAPPLIED MATERIALS INC·Filed 1995·Granted May 28, 1996·40 cites·12 claims
- 2278US5434044AMethod for the formation of tin barrier layer with preferential (111) crystallographic orientationAPPLIED MATERIALS INC·Filed 1994·Granted Jul 18, 1995·41 cites·19 claims
- 2377US6426282B1Method of forming solder bumps on a semiconductor waferAPPLIED MATERIALS INC·Filed 2000·Granted Jul 30, 2002·28 cites·25 claims
- 2477US6313042B1Cleaning contact with successive fluorine and hydrogen plasmasAPPLIED MATERIALS INC·Filed 1999·Granted Nov 6, 2001·56 cites·20 claims
- 2577US5972178AContinuous process for forming improved titanium nitride barrier layersAPPLIED MATERIALS INC·Filed 1995·Granted Oct 26, 1999·52 cites·6 claims
- 2676US6625003B2Method and apparatus for balancing an electrostatic force produced by an electrostatic chuckAPPLIED MATERIALS INC·Filed 2002·Granted Sep 23, 2003·22 cites·28 claims
- 2776US6238533B1Integrated PVD system for aluminum hole filling using ionized metal adhesion layerAPPLIED MATERIALS INC·Filed 1997·Granted May 29, 2001·33 cites·22 claims
- 2876US5882399AMethod of forming a barrier layer which enables a consistently highly oriented crystalline structure in a metallic interconnectAPPLIED MATERIALS INC·Filed 1997·Granted Mar 16, 1999·52 cites·30 claims
- 2972US5943600ATreatment of a titanium nitride layer to improve resistance to elevated temperaturesAPPLIED MATERIALS INC·Filed 1997·Granted Aug 24, 1999·40 cites·10 claims
- 3070US7323230B2Coating for aluminum componentAPPLIED MATERIALS INC·Filed 2004·Granted Jan 29, 2008·9 cites·29 claims
- 3169US6176978B1Pasting layer formation method for high density plasma deposition chambersAPPLIED MATERIALS INC·Filed 1997·Granted Jan 23, 2001·31 cites·20 claims
- 3269US5360996ATitanium nitride/titanium silicide multiple layer barrier with preferential (111) crystallographic orientation on titanium nitride surfaceAPPLIED MATERIALS INC·Filed 1993·Granted Nov 1, 1994·29 cites·18 claims
- 3368US6077353APedestal insulator for a pre-clean chamberAPPLIED MATERIALS INC·Filed 1998·Granted Jun 20, 2000·35 cites·18 claims
- 3466US6372301B1Method of improving adhesion of diffusion layers on fluorinated silicon dioxideAPPLIED MATERIALS INC·Filed 1998·Granted Apr 16, 2002·25 cites·27 claims
- 3564US5697427AApparatus and method for cooling a substrateAPPLIED MATERIALS INC·Filed 1995·Granted Dec 16, 1997·29 cites·15 claims
- 3663US7014887B1Sequential sputter and reactive precleans of vias and contactsAPPLIED MATERIALS INC·Filed 1999·Granted Mar 21, 2006·26 cites·17 claims
- 3762US7006888B2Semiconductor wafer preheatingAPPLIED MATERIALS INC·Filed 2002·Granted Feb 28, 2006·8 cites·4 claims
- 3858US6899799B2Method and apparatus for improving sidewall coverage during sputtering in a chamber having an inductively coupled plasmaAPPLIED MATERIALS INC·Filed 2002·Granted May 31, 2005·6 cites·16 claims
- 3954US7053002B2Plasma preclean with argon, helium, and hydrogen gasesAPPLIED MATERIALS INC·Filed 1998·Granted May 30, 2006·19 cites·20 claims
- 4053US6059872ASmooth titanium nitride films having low resistivityAPPLIED MATERIALS INC·Filed 1998·Granted May 9, 2000·11 cites·3 claims
- 4153US5504043ABarrier layers and aluminum contactsAPPLIED MATERIALS INC·Filed 1994·Granted Apr 2, 1996·18 cites·12 claims
- 4247US6071811ADeposition of titanium nitride films having improved uniformityAPPLIED MATERIALS INC·Filed 1997·Granted Jun 6, 2000·13 cites·5 claims
- 4346US2006021870A1Profile detection and refurbishment of deposition targetsAPPLIED MATERIALS INC·Filed 2004·Application pending·0 cites
- 4446US2006024440A1Reduced oxygen arc sprayAPPLIED MATERIALS INC·Filed 2004·Application pending·0 cites
- 4545US6207027B1Method to reduce overhead time in an ion metal plasma processAPPLIED MATERIALS INC·Filed 1997·Granted Mar 27, 2001·10 cites·18 claims
- 4645US2005205414A1Method and apparatus for improving sidewall coverage during sputtering in a chamber having an inductively coupled plasmaAPPLIED MATERIALS INC·Filed 2005·Application pending·0 cites
- 4743US5919342AMethod for depositing golden titanium nitrideAPPLIED MATERIALS INC·Filed 1997·Granted Jul 6, 1999·9 cites·3 claims
- 4843US2004166697A1Method and apparatus for processing substrates in a system having high and low pressure areasFiled 2003·Application pending·0 cites
- 4943US2002125123A1Method of producing smooth titanium nitride films having low resistivityFiled 2002·Application pending·0 cites
- 5042US6149777AMethod of producing smooth titanium nitride films having low resistivityAPPLIED MATERIALS INC·Filed 1999·Granted Nov 21, 2000·6 cites·6 claims
Showing the top 50 of 53 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →