Inventor · disambiguated record
Jian Chen
Also filed as: CHEN JIAN · CHEN JIAN-LIN
19 granted patents·7 pending applications·289 citations·filing 1998–2023
94Inventor score
Files withFREESCALE SEMICONDUCTOR INC8SEMICONDUCTOR MFG INT SHANGHAI CORP4CHEN JIAN3LIN HUANG-PIN2MOTOROLA INC2
Top patents by PatentIndex Score
26 records- 0193US7575975B2Method for forming a planar and vertical semiconductor structure having a strained semiconductor layerFREESCALE SEMICONDUCTOR INC·Filed 2005·Granted Aug 18, 2009·34 cites·17 claims
- 0293US6864135B2Semiconductor fabrication process using transistor spacers of differing widthsFREESCALE SEMICONDUCTOR INC·Filed 2002·Granted Mar 8, 2005·82 cites·19 claims
- 0391US11881480B2Semiconductor structure and method of forming semiconductor structureSEMICONDUCTOR MFG INT SHANGHAI CORP·Filed 2021·Granted Jan 23, 2024·2 cites·20 claims
- 0489US6049114ASemiconductor device having a metal containing layer overlying a gate dielectricMOTOROLA INC·Filed 1998·Granted Apr 11, 2000·105 cites·19 claims
- 0577US9466522B2Method for fabricating semiconductor structurePOWERCHIP TECH CORP·Filed 2015·Granted Oct 11, 2016·3 cites·13 claims
- 0675US7615806B2Method for forming a semiconductor structure and structure thereofFREESCALE SEMICONDUCTOR INC·Filed 2005·Granted Nov 10, 2009·6 cites·19 claims
- 0773US7064396B2Integrated circuit with multiple spacer insulating region widthsFREESCALE SEMICONDUCTOR INC·Filed 2004·Granted Jun 20, 2006·16 cites·15 claims
- 0872US12389673B2Semiconductor structure and method of forming semiconductor structureSEMICONDUCTOR MFG INT SHANGHAI CORP·Filed 2023·Granted Aug 12, 2025·0 cites·20 claims
- 0965US7161199B2Transistor structure with stress modification and capacitive reduction feature in a width direction and method thereofFREESCALE SEMICONDUCTOR INC·Filed 2004·Granted Jan 9, 2007·12 cites·26 claims
- 1065US7125805B2Method of semiconductor fabrication incorporating disposable spacer into elevated source/drain processingFREESCALE SEMICONDUCTOR INC·Filed 2004·Granted Oct 24, 2006·11 cites·12 claims
- 1161US11439871B2System and method for rehabilitationCONZIAN LTD·Filed 2019·Granted Sep 13, 2022·1 cites·18 claims
- 1260US7288447B2Semiconductor device having trench isolation for differential stress and method thereforCHEN JIAN·Filed 2005·Granted Oct 30, 2007·2 cites·5 claims
- 1359US7276406B2Transistor structure with dual trench for optimized stress effect and method thereforFREESCALE SEMICONDUCTOR INC·Filed 2004·Granted Oct 2, 2007·7 cites·35 claims
- 1459US2023258604A1Efficient ultrasonic phased array phase shift migration imaging method for defects in multi-layer structureUNIV ZHEJIANG·Filed 2023·Application pending·0 cites
- 1554US7074713B2Plasma enhanced nitride layerFREESCALE SEMICONDUCTOR INC·Filed 2004·Granted Jul 11, 2006·6 cites·26 claims
- 1652US12384562B2System and method for capturing space targetHARBIN INST TECHNOLOGY·Filed 2023·Granted Aug 12, 2025·0 cites·14 claims
- 1752US11211475B2Semiconductor device and formation method thereofSEMICONDUCTOR MFG INT SHANGHAI CORP·Filed 2020·Granted Dec 28, 2021·0 cites·17 claims
- 1851US2022003684A1Responsive interference colorationUWM RES FOUNDATION INC·Filed 2019·Application pending·0 cites
- 1949US8269912B2Display device for preventing electromagnetic interferenceLIN HUANG-PIN·Filed 2009·Granted Sep 18, 2012·1 cites·19 claims
- 2047US2022037209A1Method for manufacturing semiconductor structureSEMICONDUCTOR MFG INT SHANGHAI CORP·Filed 2021·Application pending·0 cites
- 2145US8179683B2Display deviceLIN HUANG-PIN·Filed 2009·Granted May 15, 2012·0 cites·20 claims
- 2245US2023150317A1Tire Pressure Monitoring System Learning Method, Device, Sensor, System and MediumSHENZHEN XTOOLTECH INTELLIGENT CO LTD·Filed 2021·Application pending·0 cites
- 2344US2006011988A1Integrated circuit with multiple spacer insulating region widthsCHEN JIAN·Filed 2005·Application pending·0 cites
- 2442US6503814B2Method for forming trench isolationMOTOROLA INC·Filed 2001·Granted Jan 7, 2003·1 cites·15 claims
- 2539US2015032021A1Safety monitoring system and fatigue monitoring apparatus and fatigue detecting helmet thereofAMTRAN TECHNOLOGY CO LTD·Filed 2013·Application pending·0 cites
- 2636US2006043500A1Transistor structure with stress modification and capacitive reduction feature in a channel direction and method thereofCHEN JIAN·Filed 2004·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →