Inventor · disambiguated record
Seiji Shimabukuro
Also filed as: SHIMABUKURO SEIJI
30 granted patents·3 pending applications·699 citations·filing 2012–2024
97Inventor score
Top patents by PatentIndex Score
33 records- 0198US9576967B1Method of suppressing epitaxial growth in support openings and three-dimensional memory device containing non-epitaxial support pillars in the support openingsSANDISK TECHNOLOGIES LLC·Filed 2016·Granted Feb 21, 2017·199 cites·25 claims
- 0298US9412749B1Three dimensional memory device having well contact pillar and method of making thereofSANDISK TECHNOLOGIES INC·Filed 2014·Granted Aug 9, 2016·77 cites·31 claims
- 0398US9159739B2Floating gate ultrahigh density vertical NAND flash memorySANDISK TECHNOLOGIES INC·Filed 2014·Granted Oct 13, 2015·70 cites·27 claims
- 0497US10355012B2Multi-tier three-dimensional memory device with stress compensation structures and method of making thereofSANDISK TECHNOLOGIES LLC·Filed 2017·Granted Jul 16, 2019·20 cites·9 claims
- 0597US9608043B2Method of operating memory array having divided apart bit lines and partially divided bit line selector switchesSANDISK TECHNOLOGIES LLC·Filed 2016·Granted Mar 28, 2017·19 cites·20 claims
- 0696US10141331B1Three-dimensional memory device containing support pillars underneath a retro-stepped dielectric material and method of making thereofSANDISK TECHNOLOGIES LLC·Filed 2017·Granted Nov 27, 2018·53 cites·22 claims
- 0796US9887240B2Method of fabricating memory array having divided apart bit lines and partially divided bit line selector switchesSANDISK TECHNOLOGIES LLC·Filed 2017·Granted Feb 6, 2018·14 cites·20 claims
- 0896US9305937B1Bottom recess process for an outer blocking dielectric layer inside a memory openingSANDISK TECHNOLOGIES INC·Filed 2014·Granted Apr 5, 2016·39 cites·45 claims
- 0995US9911790B1Resistive RAM including air gaps between word lines and between vertical bit linesSANDISK TECHNOLOGIES LLC·Filed 2017·Granted Mar 6, 2018·30 cites·20 claims
- 1095US9768186B2Three dimensional memory device having well contact pillar and method of making thereofSANDISK TECHNOLOGIES LLC·Filed 2016·Granted Sep 19, 2017·16 cites·17 claims
- 1195US9419012B1Three-dimensional memory structure employing air gap isolationSANDISK TECHNOLOGIES INC·Filed 2015·Granted Aug 16, 2016·67 cites·14 claims
- 1294US11532570B2Three-dimensional memory device containing bridges for enhanced structural support and methods of forming the sameSANDISK TECHNOLOGIES LLC·Filed 2021·Granted Dec 20, 2022·3 cites·16 claims
- 1394US9589839B1Method of reducing control gate electrode curvature in three-dimensional memory devicesSANDISK TECHNOLOGIES INC·Filed 2016·Granted Mar 7, 2017·19 cites·23 claims
- 1492US9356074B1Memory array having divided apart bit lines and partially divided bit line selector switchesSANDISK 3D LLC·Filed 2014·Granted May 31, 2016·13 cites·13 claims
- 1591US12408345B2Three-dimensional memory device with backside support pillar structures and methods of forming the sameSANDISK TECHNOLOGIES LLC·Filed 2023·Granted Sep 2, 2025·1 cites·20 claims
- 1691US9728499B2Set of stepped surfaces formation for a multilevel interconnect structureSANDISK TECHNOLOGIES INC·Filed 2014·Granted Aug 8, 2017·14 cites·12 claims
- 1791US9711650B2Vertical thin film transistor selection devices and methods of fabricationSANDISK TECHNOLOGIES LLC·Filed 2016·Granted Jul 18, 2017·7 cites·20 claims
- 1891US9379246B2Vertical thin film transistor selection devices and methods of fabricationSANDISK 3D LLC·Filed 2014·Granted Jun 28, 2016·11 cites·14 claims
- 1990US11844222B2Three-dimensional memory device with backside support pillar structures and methods of forming the sameSANDISK TECHNOLOGIES LLC·Filed 2021·Granted Dec 12, 2023·2 cites·3 claims
- 2089US12213320B2Three-dimensional memory device with finned support pillar structures and methods for forming the sameSANDISK TECHNOLOGIES LLC·Filed 2021·Granted Jan 28, 2025·2 cites·20 claims
- 2189US10354859B1Three-dimensional resistive random access memory device containing selectively grown amorphous silicon-containing barrier and method of making the sameSANDISK TECHNOLOGIES LLC·Filed 2018·Granted Jul 16, 2019·5 cites·10 claims
- 2286US10546870B2Three-dimensional memory device containing offset column stairs and method of making the sameSANDISK TECHNOLOGIES LLC·Filed 2018·Granted Jan 28, 2020·7 cites·14 claims
- 2386US10468413B2Method for forming hydrogen-passivated semiconductor channels in a three-dimensional memory deviceSANDISK TECHNOLOGIES LLC·Filed 2018·Granted Nov 5, 2019·7 cites·20 claims
- 2481US10818545B2Contact via structure including a barrier metal disc for low resistance contact and methods of making the sameSANDISK TECHNOLOGIES LLC·Filed 2018·Granted Oct 27, 2020·4 cites·12 claims
- 2561US12382638B2Three-dimensional memory device and method of making thereof using double pitch word line formationSANDISK TECHNOLOGIES LLC·Filed 2021·Granted Aug 5, 2025·0 cites·20 claims
- 2660US2024260266A1Three-dimensional memory device containing silicon oxycarbide liners and methods of forming the sameSANDISK TECHNOLOGIES LLC·Filed 2023·Application pending·0 cites
- 2755US11702750B2Method and apparatus for depositing a multi-sector film on backside of a semiconductor waferSANDISK TECHNOLOGIES LLC·Filed 2020·Granted Jul 18, 2023·0 cites·4 claims
- 2854US11942429B2Three-dimensional memory device and method of making thereof using double pitch word line formationSANDISK TECHNOLOGIES LLC·Filed 2021·Granted Mar 26, 2024·0 cites·14 claims
- 2954US2025234543A1Three-dimensional memory device including a schottky source contact structure and methods for forming the sameSANDISK TECHNOLOGIES LLC·Filed 2024·Application pending·0 cites
- 3051US12046285B2Three-dimensional memory device and method of making thereof using double pitch word line formationSANDISK TECHNOLOGIES LLC·Filed 2021·Granted Jul 23, 2024·0 cites·3 claims
- 3151US11473199B2Method and apparatus for depositing a multi-sector film on backside of a semiconductor waferSANDISK TECHNOLOGIES LLC·Filed 2020·Granted Oct 18, 2022·0 cites·9 claims
- 3250US11637118B2Three-dimensional memory device containing auxiliary support pillar structures and method of making the sameSANDISK TECHNOLOGIES LLC·Filed 2020·Granted Apr 25, 2023·0 cites·20 claims
- 3339US2013307044A1Selective Air Gap Isolation In Non-Volatile MemoryKINOSHITA HIROYUKI·Filed 2012·Application pending·0 cites
Join the waitlist — get patent alerts
Get an alert when Seiji Shimabukuro files or is granted a new patent.
We store only your email — no account needed. See our privacy policy.
Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →